Loading...

BF245RLRM

Onsemi

BF245RLRM by Onsemi

BF245RLRM by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,310 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,310

-

-

-

-

Vyrian

USA . 2,307 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,307

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 5,512 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,512

-

-

-

-

SupplyDigital Components

Austria . 3,726 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,726

-

-

-

-

Northwest PG Solutions

USA . 2,271 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,271

-

-

-

-

Kulean Microsystems

USA . 2,116 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,116

-

-

-

-

Corphita

USA . 1,846 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,846

-

-

-

-

Problanco Electronics

Mexico . 1,736 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,736

-

-

-

-

UHIMA Technologies

Türkiye . 573 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

573

-

-

-

-

Corohmni

South Africa . 196 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

196

-

-

-

-

Native Components

USA . 70 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

70

-

-

-

-

Overview

Enhance your electronic projects with the BF245RLRM by Onsemi, a top-quality RF Small Signal Field Effect Transistor that offers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this N-CHANNEL FET is perfect for amplifier applications in the ultra-high frequency band. With its advanced technology and high-frequency capabilities, this transistor delivers exceptional value and benefits to customers looking to achieve optimal results in their designs. Upgrade your projects today with the BF245RLRM and experience the difference that Onsemi quality can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

Ideal for applications where an N-channel transistor is required, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design and integration, making the transistor easier to use.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Minimum DS Breakdown Voltage: 30 V

Can withstand a relatively high breakdown voltage, offering reliable operation in circuits with higher voltages.

Package Shape: ROUND

Allows for easy mounting and integration into circular or compact designs.

Terminal Form: THROUGH-HOLE

Provides secure and stable connections during assembly and operation.

Operating Mode: DEPLETION MODE

Offers flexibility in circuit design, allowing for depletion-mode operation when needed.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for applications requiring ultra-high frequency performance, such as communication systems or radar.

No. of Terminals: 3

Simplifies connectivity in circuits, reducing complexity and potential points of failure.

Package Style (Meter): CYLINDRICAL

Facilitates easy integration into cylindrical or enclosed designs, offering a compact form factor.

Field Effect Transistor Technology: JUNCTION

Utilizes proven junction technology for reliable performance and consistency.

Transistor Element Material: SILICON

Silicon-based transistors offer excellent performance characteristics and reliability in various operating conditions.

Terminal Finish: TIN LEAD

Provides a reliable and durable finish on the terminals for stable connections and performance.

Maximum Drain Current (ID): 0.1 A

Capable of handling a maximum drain current of 0.1 A, suitable for a range of low-power applications.

Terminal Position: BOTTOM

Clear indication of terminal positioning for easy installation and circuit design.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF245RLRM attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF245RLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20