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2N5398

Texas Instruments

2N5398 by Texas Instruments

2N5398 by Texas Instruments is an N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND, it has a power dissipation of 0.3W and operates in DEPLETION MODE at up to 200°C.

Median Price

$6.330

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 86 parts In-Stock

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$6.330

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Digiode

USA . 3,291 parts In-Stock

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Anansix

USA . 2,535 parts In-Stock

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2,535

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Vyrian

USA . 2,137 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 613 parts In-Stock

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Holdelec - ElecDif-Pro

France . 613 parts In-Stock

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Electronic Expediters

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Prism Electronics

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LittleDiode

UK . 2 parts In-Stock

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Parana Technologies

USA . 2,028 parts In-Stock

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$1.180

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$1.985

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2,028

$1.180

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$1.985

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DigiPath Technology Company

USA . 1,567 parts In-Stock

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$1.299

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$1.196

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$1.299

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ChromeModa Solutions

Germany . 6,266 parts In-Stock

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$1.326

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$1.087

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IDEA Electronic Components Group

UK . 907 parts In-Stock

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$1.326

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$1.193

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907

$1.326

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AZTECH Wire

Italy . 492 parts In-Stock

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$16.191

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One Stop Electronics

USA . 284 parts In-Stock

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$20.050

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Native Components

USA . 884 parts In-Stock

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$173.470

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$166.531

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$166.531

Northwest PG Solutions

USA . 1,423 parts In-Stock

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$190.817

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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2,780

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Supply Digital

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Corphita

USA . 1,867 parts In-Stock

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Perfect Parts

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Overview

Experience the superior quality and performance of the 2N5398 RF Small Signal Field Effect Transistor by Texas Instruments. As a trusted manufacturer in the industry, Texas Instruments delivers cutting-edge technology and reliability. Ideal for amplifier applications in the very high frequency band, this N-channel transistor offers exceptional value and benefits. Trust in the 2N5398 for consistent, high-quality performance that meets your needs and exceeds your expectations. Elevate your projects with Texas Instruments.

Feature Benefit Bullets

Package Body Material: METAL

Provides excellent durability and shielding against electromagnetic interference, ensuring reliable performance in various environments.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically have higher electron mobility and faster switching speeds compared to P-Channel FETs, making them suitable for high-frequency applications.

Transistor Application: AMPLIFIER

Ideal for amplifying small signals without introducing significant noise or distortion, making it suitable for use in RF signal processing applications.

Minimum DS Breakdown Voltage: 25 V

Suitable for applications requiring higher voltage handling capabilities, providing a margin of safety against voltage spikes or surges.

Field Effect Transistor Technology: JUNCTION

Junction FETs offer low input impedance, high gain, and low noise characteristics, making them suitable for high-frequency and low-power applications.

Maximum Operating Temperature: 200 °C

Allows the FET to operate reliably in high-temperature environments, ensuring stable performance under demanding conditions.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5398 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1.3 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5398 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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