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PMBFJ308,215

NXP Semiconductors

PMBFJ308,215 by NXP Semiconductors

NXP Semiconductors' PMBFJ308,215 is an N-CHANNEL RF FET for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a 25V DS Breakdown Voltage and handles VERY HIGH FREQUENCY BAND signals. With GULL WING terminals and a SMALL OUTLINE package style, it can dissipate up to 0.25W at 150°C.

Median Price

$0.375

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,921 parts In-Stock

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Chip Stock

USA . 2,500 parts In-Stock

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Anansix

USA . 2,153 parts In-Stock

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Digiode

USA . 2,112 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Bristol Electronics

USA . 250 parts In-Stock

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$0.375

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$0.225

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$0.375

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Microfarads

USA . 233 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,324 parts In-Stock

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$1.650

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$1.741

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$1.584

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$1.428

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500

$1.741

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Corohmni

South Africa . 898 parts In-Stock

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$1.934

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One Stop Electronics

USA . 581 parts In-Stock

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$7.050

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AZTECH Wire

Italy . 299 parts In-Stock

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$7.876

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Ampacity Inc.

Singapore . 1,137 parts In-Stock

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$33.050

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Semicontronic

India . 424 parts In-Stock

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$45.050

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$43.924

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$43.698

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Perfect Parts

USA . 7,442 parts In-Stock

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Authorized Procurement Solutions

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Microchip USA

USA . 4,768 parts In-Stock

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Corphita

USA . 2,712 parts In-Stock

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Continental Prestige Electronics

USA . 2,594 parts In-Stock

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Argo Parts USA

USA . 2,382 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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UNI Independent Distributors

Spain . 694 parts In-Stock

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Overview

Unlock the potential of your amplifier designs with the PMBFJ308,215 from NXP Semiconductors. Crafted with precision and expertise, this RF Small Signal Field Effect Transistor offers unparalleled performance in the very high-frequency band. With a single-channel configuration and N-Channel polarity, this transistor is designed to elevate your projects to new heights. Whether you're building communication systems or enhancing signal processing, the PMBFJ308,215 delivers reliability and efficiency like no other. Experience the difference with NXP Semiconductors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection for the transistor, making it suitable for a variety of environments and applications.

Transistor Application: AMPLIFIER

Being specifically designed for amplifier applications, this transistor excels in providing amplification of signals effectively and efficiently.

Minimum DS Breakdown Voltage: 25 V

With a minimum breakdown voltage of 25 V, this transistor can handle higher voltages, making it reliable and durable in various operating conditions.

Surface Mount: YES

The surface mount capability of this transistor allows for easy and efficient integration onto printed circuit boards, saving space and simplifying assembly.

Maximum Power Dissipation (Abs): 0.25 W

With a maximum power dissipation of 0.25 W, this transistor can handle power efficiently, reducing the risk of overheating and ensuring long-term reliability.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this transistor to operate reliably in elevated temperature environments without performance degradation.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) PMBFJ308,215 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2.5 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PMBFJ308,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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