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PMBF5484-TAPE-7

NXP Semiconductors

PMBF5484-TAPE-7 by NXP Semiconductors

PMBF5484-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 25V min DS breakdown voltage, operates in depletion mode, and supports ultra-high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,606 parts In-Stock

1+ parts

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2,606

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Vyrian

USA . 497 parts In-Stock

1+ parts

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497

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Anansix

USA . 308 parts In-Stock

1+ parts

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308

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,022 parts In-Stock

1+ parts

$11.050

100+ parts

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1,022

$11.050

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Corphita

USA . 1,041 parts In-Stock

1+ parts

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1,041

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UNI Independent Distributors

Spain . 800 parts In-Stock

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800

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Overview

Unlock exceptional performance with the PMBF5484-TAPE-7 from NXP Semiconductors, a leader in innovation and quality. Designed for RF applications, this compact N-channel FET excels in amplification, ensuring clear and reliable signal transmission even in ultra-high frequency settings. Its robust plastic/epoxy packaging guarantees durability, while NXP's commitment to excellence means you can trust this product to enhance your designs, maximizing efficiency and reliability. Elevate your projects with unmatched performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Robust and lightweight material provides excellent durability and ease of integration into various applications.

Polarity or Channel Type: N-CHANNEL

Ideal for high-speed switching applications and improves efficiency in amplification stages.

Configuration: SINGLE

Single configuration simplifies circuit design and offers versatility for various applications.

Transistor Application: AMPLIFIER

Specifically designed for amplification, ensuring high performance and reliability in signal processing.

Surface Mount: YES

Facilitates compact PCB designs and automated assembly processes, reducing production costs.

Minimum DS Breakdown Voltage: 25 V

Provides a secure operating range for moderate voltage applications, ensuring reliability.

Package Shape: RECTANGULAR

Rectangular shape optimizes PCB space and allows for efficient layout in design.

Terminal Form: GULL WING

Gull wing terminals ensure strong mechanical and electrical connections, enhancing performance.

Operating Mode: DEPLETION MODE

Allows operation with lower gate voltages which increases flexibility in circuit designs.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of operating in ultra high frequencies, making it suitable for advanced communication systems.

No. of Terminals: 3

Three terminals enable straightforward connections for effective circuit integration.

Package Style (Meter): SMALL OUTLINE

Compact package style reduces board space requirements and enhances design flexibility.

Field Effect Transistor Technology: JUNCTION

Junction technology enhances performance and minimizes power consumption during operation.

Maximum Operating Temperature: 150 °C

High temperature tolerance ensures reliable operation in demanding environments.

Transistor Element Material: SILICON

Silicon material offers excellent thermal stability and electrical performance.

Terminal Position: DUAL

Dual terminal positioning supports varied layout configurations, improving design flexibility.

Maximum Feedback Capacitance (Crss): 1 pF

Low feedback capacitance minimizes signal distortion, ensuring high fidelity in amplification.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) PMBF5484-TAPE-7 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PMBF5484-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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