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PMBF4416-TAPE-7

NXP Semiconductors

PMBF4416-TAPE-7 by NXP Semiconductors

PMBF4416-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V breakdown voltage, operates in depletion mode, and supports ultra-high frequency bands. Its compact surface mount design ensures efficient performance in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,757 parts In-Stock

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1,757

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Digiode

USA . 1,451 parts In-Stock

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1,451

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Anansix

USA . 1,222 parts In-Stock

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1,222

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 494 parts In-Stock

1+ parts

$36.050

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494

$36.050

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UNI Independent Distributors

Spain . 2,815 parts In-Stock

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2,815

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Corphita

USA . 529 parts In-Stock

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529

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Overview

Unlock superior performance with the PMBF4416-TAPE-7 from NXP Semiconductors—a leader in innovative technology. This exceptional N-channel RF Small Signal FET is designed for amplifying signals in ultra-high frequency applications, offering remarkable reliability and efficiency. Its compact surface mount design allows for versatile integration, making it ideal for consumer electronics and telecommunications. Elevate your projects with NXP's quality and expertise, ensuring optimal results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package provides good durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally offer higher efficiency and performance in amplification applications, enhancing signal processing capabilities.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces space requirements, making it easier to integrate into various systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor can improve signal strength, making it ideal for audio and RF applications.

Surface Mount: YES

Surface mount technology allows for compact designs, improving reliability and facilitating automated assembly processes.

Minimum DS Breakdown Voltage: 30 V

A minimum breakdown voltage of 30 V ensures robustness and reliability in high-voltage applications, safeguarding against damage.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on circuit boards, allowing for high-density layouts in modern electronics.

Terminal Form: GULL WING

Gull wing terminals facilitate better soldering and improve mechanical stability, ensuring a reliable connection in circuit applications.

Operating Mode: DEPLETION MODE

Depletion mode operation offers low power consumption and improves efficiency in specific applications, such as low-noise amplifiers.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operation in the ultra-high frequency band allows for effective signal transmission in high-speed communication systems.

No. of Terminals: 3

With three terminals, this FET simplifies circuit designs, allowing for straightforward integration into various applications.

Package Style (Meter): SMALL OUTLINE

The small outline package is ideal for space-constrained applications, supporting miniaturization in electronic designs.

Field Effect Transistor Technology: JUNCTION

Junction technology provides high reliability and stable performance, especially valued in professional amplifiers and RF applications.

Maximum Operating Temperature: 150 °C

Operating up to 150 °C ensures reliability in demanding environmental conditions, making it suitable for industrial applications.

Transistor Element Material: SILICON

Silicon as the material ensures excellent thermal and electrical properties, which contribute to overall device performance.

Terminal Position: DUAL

Dual terminal positioning helps in effective heat dissipation and improves circuit layout flexibility, enhancing overall device efficiency.

Maximum Feedback Capacitance (Crss): 0.8 pF

A low feedback capacitance ensures faster switching speeds and reduces signal distortion, making it suitable for high-frequency applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) PMBF4416-TAPE-7 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Configuration:

Minimum DS Breakdown Voltage:

30 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

.8 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PMBF4416-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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