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PMBF4416A-TAPE-7

NXP Semiconductors

PMBF4416A-TAPE-7 by NXP Semiconductors

PMBF4416A-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 35V min DS breakdown voltage, operates in depletion mode, and supports ultra-high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,812 parts In-Stock

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4,812

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Anansix

USA . 1,852 parts In-Stock

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1,852

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Digiode

USA . 1,209 parts In-Stock

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1,209

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One Stop Electronics

USA . 929 parts In-Stock

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$21.050

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929

$21.050

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UNI Independent Distributors

Spain . 6,661 parts In-Stock

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Corphita

USA . 4,504 parts In-Stock

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Overview

Elevate your designs with the PMBF4416A-TAPE-7 by NXP Semiconductors, a trusted leader in RF technology. This N-channel FET delivers exceptional performance for amplifier applications, ensuring reliability and efficiency in ultra-high frequency operations. Its compact surface mount design simplifies integration while providing outstanding thermal stability. Experience unparalleled quality and innovation that empowers your projects to reach new heights. Choose NXP for a future-ready solution!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection against environmental factors, making the transistor suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally provide higher efficiency and lower on-resistance, making them ideal for amplifying signals in RF applications.

Configuration: SINGLE

A single configuration simplifies circuit design, reduces space requirements, and allows for easier implementation in compact systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this FET is optimized for high signal fidelity, making it ideal for audio and RF amplification tasks.

Surface Mount: YES

Surface mount technology allows for compact designs and improved performance by reducing lead inductance, which is crucial for high-frequency applications.

Minimum DS Breakdown Voltage: 35 V

With a minimum breakdown voltage of 35 V, this FET offers robust performance in high-voltage applications, enhancing reliability.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on PCBs, allowing for more efficient layout and design flexibility.

Terminal Form: GULL WING

The gull wing terminal form ensures reliable solder joints and makes the mounting process straightforward in automated assembly.

Operating Mode: DEPLETION MODE

Depletion mode operation provides unique control over the transistor's conductance, allowing for efficient signal modulation in various applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra high frequency band, this FET is suitable for advanced RF applications, including communication systems and radar.

No. of Terminals: 3

A three-terminal design simplifies connections and integrates easily into standard circuit configurations, ensuring versatility in applications.

Package Style (Meter): SMALL OUTLINE

The small outline packaging enables high-density mounting on PCBs, making it perfect for compact electronic devices.

Field Effect Transistor Technology: JUNCTION

Junction technology contributes to lower noise levels and reduced power consumption, enhancing overall device performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this FET can withstand harsh conditions, making it suitable for demanding environments.

Transistor Element Material: SILICON

Silicon offers excellent electronic properties, ensuring reliable performance and widespread compatibility in various applications.

Terminal Position: DUAL

Dual terminal position enhances circuit layout flexibility, facilitating easier integration within a diverse range of electronic systems.

Maximum Feedback Capacitance (Crss): 0.8 pF

A low feedback capacitance of 0.8 pF ensures high-speed operation and excellent frequency response, critical for high-performance RF applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) PMBF4416A-TAPE-7 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Configuration:

Minimum DS Breakdown Voltage:

35 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

.8 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PMBF4416A-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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