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A5T3823

Texas Instruments

A5T3823 by Texas Instruments

A5T3823 by Texas Instruments is an N-CHANNEL RF FET with 30V DS Breakdown Voltage, ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND. Featuring SINGLE configuration, 0.3W power dissipation, and DEPLETION MODE operation up to 150°C, it offers high performance in a CYLINDRICAL package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,102 parts In-Stock

1+ parts

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6,102

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Digiode

USA . 1,376 parts In-Stock

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1,376

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,054 parts In-Stock

1+ parts

$0.589

100+ parts

-

1k+ parts

$1.674

10k+ parts

-

2,054

$0.589

-

$1.674

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DigiPath Technology Company

USA . 2,358 parts In-Stock

1+ parts

$0.649

100+ parts

$0.597

1k+ parts

-

10k+ parts

-

2,358

$0.649

$0.597

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ChromeModa Solutions

Germany . 5,958 parts In-Stock

1+ parts

$0.662

100+ parts

$0.543

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-

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5,958

$0.662

$0.543

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IDEA Electronic Components Group

UK . 465 parts In-Stock

1+ parts

$0.662

100+ parts

-

1k+ parts

$0.596

10k+ parts

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465

$0.662

-

$0.596

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AZTECH Wire

Italy . 210 parts In-Stock

1+ parts

$9.470

100+ parts

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210

$9.470

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Native Components

USA . 105 parts In-Stock

1+ parts

$10.412

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105

$10.412

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Northwest PG Solutions

USA . 1,884 parts In-Stock

1+ parts

$11.453

100+ parts

$10.308

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1,884

$11.453

$10.308

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Ampacity Inc.

Singapore . 831 parts In-Stock

1+ parts

$16.050

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831

$16.050

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One Stop Electronics

USA . 1,228 parts In-Stock

1+ parts

$24.050

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1,228

$24.050

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Semicontronic

India . 1,461 parts In-Stock

1+ parts

$44.050

100+ parts

$42.949

1k+ parts

$42.728

10k+ parts

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1,461

$44.050

$42.949

$42.728

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Corphita

USA . 1,028 parts In-Stock

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1,028

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Corohmni

South Africa . 383 parts In-Stock

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383

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Overview

Upgrade your amplifier with the A5T3823 by Texas Instruments, a top-quality RF Small Signal Field Effect Transistor that offers reliability and superior performance. With a focus on delivering high frequency signal processing, this N-CHANNEL transistor is perfect for applications requiring very high frequency band operation. Designed with precision and expertise, Texas Instruments ensures that each A5T3823 transistor provides maximum power dissipation and minimum DS breakdown voltage for optimal efficiency. Elevate your projects with the A5T3823 and experience the difference in quality and value that only Texas Instruments can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package durable and resistant to external factors, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better conductivity and speed compared to P-channel transistors, making this transistor a good choice for high-performance applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to integrate into existing systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification processes.

Minimum DS Breakdown Voltage: 30 V

The high breakdown voltage allows for a higher margin of safety and reliability in operation, making it suitable for a variety of voltage requirements.

Package Shape: ROUND

The round package shape is compact and allows for efficient use of space in circuit layouts.

Terminal Form: WIRE

Wire terminals are easy to solder and provide a secure connection, ensuring stable operation of the transistor.

Operating Mode: DEPLETION MODE

Depletion mode transistors offer better control and regulation of current flow, making it suitable for precise circuit applications.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Operating in the very high frequency band allows for fast signal processing and high-speed performance, making it ideal for advanced communication systems.

No. of Terminals: 3

Having 3 terminals enables versatile connectivity options and allows for different circuit configurations.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3W, this transistor can handle moderate power levels, suitable for various applications without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is robust and easy to mount, providing mechanical stability to the transistor.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high input impedance and low noise performance, ensuring accurate signal amplification.

Maximum Operating Temperature: 150 °C

Operating at a maximum temperature of 150°C allows for reliable performance in high-temperature environments.

Transistor Element Material: SILICON

Silicon transistors are known for their high conductivity, making them efficient for signal amplification and low power consumption.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and enables efficient heat dissipation, enhancing overall performance.

Maximum Feedback Capacitance (Crss): 2 pF

Low feedback capacitance ensures minimal signal distortion and high stability in amplification, providing clean and accurate output signals.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) A5T3823 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

A5T3823 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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