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J308RLRE

Onsemi

J308RLRE by Onsemi

J308RLRE by Onsemi is an N-CHANNEL RF FET with 25V DS breakdown voltage. Ideal for amplifiers in ultra-high frequency band, it features a single configuration and operates in depletion mode. With a package style of cylindrical shape, it has 3 terminals and low feedback capacitance of 2.5pF.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,748 parts In-Stock

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Vyrian

USA . 381 parts In-Stock

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381

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TANS Electronics

Latvia . 7,814 parts In-Stock

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7,814

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Problanco Electronics

Mexico . 7,353 parts In-Stock

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7,353

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SupplyDigital Components

Austria . 6,211 parts In-Stock

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Corphita

USA . 1,544 parts In-Stock

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1,544

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UHIMA Technologies

Türkiye . 823 parts In-Stock

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823

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Corohmni

South Africa . 268 parts In-Stock

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Kulean Microsystems

USA . 200 parts In-Stock

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Overview

Experience the superior quality and reliability of the J308RLRE by Onsemi, a leading manufacturer in the industry. This RF Small Signal Field Effect Transistor (FET) offers outstanding performance as an amplifier, making it ideal for a wide range of applications in the ultra high frequency band. With its N-channel configuration and depletion mode operation, this transistor delivers exceptional value and benefits to customers seeking top-notch components for their electronic projects. Trust Onsemi for cutting-edge technology and unmatched innovation in every product they offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers excellent protection for the transistor components, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance characteristics compared to P-channel FETs, making them a preferred choice for many amplifier applications.

Configuration: SINGLE

Single configuration transistors are easier to design with and integrate into circuits, simplifying the overall amplifier design process.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Minimum DS Breakdown Voltage: 25 V

With a minimum breakdown voltage of 25V, this transistor can handle higher voltage levels without failure, making it suitable for a wide range of applications.

Package Shape: ROUND

The round package shape offers an efficient and compact design, making it easier to mount and incorporate into circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and are easy to solder, ensuring stable electrical connections in amplifier circuits.

Operating Mode: DEPLETION MODE

Depletion mode FETs offer high input impedance and low output impedance, providing excellent signal amplification capabilities.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of operating in the ultra high frequency band, this transistor is ideal for high-speed signal amplification applications.

No. of Terminals: 3

The three terminals provide necessary connections for biasing and signal input/output, allowing for proper functionality as an amplifier component.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact and space-saving design, making it suitable for various amplifier circuit layouts.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high input impedance and low output impedance, providing excellent amplification properties for efficient signal processing.

Transistor Element Material: SILICON

Silicon transistors offer excellent performance characteristics, such as low noise and high gain, making them a popular choice for amplifier applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides reliable and durable connections, ensuring long-term stability and performance in amplifier circuits.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and soldering, simplifying the assembly process for amplifier circuits.

Maximum Feedback Capacitance (Crss): 2.5 pF

With a low maximum feedback capacitance of 2.5 pF, this transistor minimizes signal distortion and ensures high-frequency stability in amplifier circuits.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) J308RLRE attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2.5 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

J308RLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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