Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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The NXP Semiconductors BF513,215 is a single N-channel RF FET with a max power dissipation of 0.25W and operating temperature of 150°C. Ideal for amplifier applications in the very high frequency band, it features a min DS breakdown voltage of 20V and terminal finish in Tin (Sn).
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This material provides durability and protection for the transistor, making it suitable for various applications.
N-Channel transistors are commonly used in amplifiers and other electronic devices, offering good performance in such applications.
A single configuration simplifies the design and integration of the transistor into circuitry, enhancing ease of use.
Specifically designed for amplifier applications, ensuring high performance and reliability in amplifying signals.
Allows for easy and efficient mounting on circuit boards, saving space and facilitating automated assembly processes.
With a minimum breakdown voltage of 20V, this transistor can handle higher voltages, suitable for various signal processing applications.
Rectangular shape provides a compact form factor, making it easier to fit into tight spaces on circuit boards.
Gull Wing terminals offer better mechanical strength and improved solder joint quality, ensuring reliable connections.
Depletion mode operation allows for easy control of current flow, making the transistor versatile in different circuit configurations.
Capable of operating in very high frequency bands, ideal for applications requiring fast signal processing and high data rates.
With 3 terminals, the transistor can be easily connected in circuits, providing flexibility in design and functionality.
With a maximum power dissipation of 0.25W, the transistor can handle moderate power levels without overheating, ensuring reliable operation.
Small outline package style saves space on circuit boards, making it suitable for compact electronic devices and designs.
Junction technology offers high performance and efficiency, making the transistor suitable for various signal processing applications.
Capable of operating at temperatures up to 150°C, ensuring stable performance in harsh environments or high-temperature conditions.
Silicon material provides good electrical properties, enhancing the performance and reliability of the transistor.
Tin terminal finish offers good solderability, ensuring reliable connections and easy assembly in circuit boards.
With a maximum drain current of 0.03A, the transistor can handle moderate current levels, suitable for various electronic applications.
Dual terminal position provides flexibility in connecting the transistor in different circuit configurations, enhancing versatility.
Can withstand peak reflow temperatures for up to 30 seconds, ensuring reliable soldering during assembly.
Capable of withstanding high peak reflow temperatures up to 260°C, ensuring proper soldering and reliability during assembly.
With a maximum feedback capacitance of 0.4pF, the transistor offers good high-frequency performance and stability in signal processing.
RF Small Signal Field Effect Transistors (FET) BF513,215 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
BF513,215 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.21.00
PCN Obsolescence/ EOL - Mult Dev EOL 6/Jun/2020
PCN Packaging - All Dev Label Update 15/Dec/2020
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
BAV99
Diodes Incorporated
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
EU2B-YS2J03F
Idec
ROTARY SWITCH;
DS18B20Z+
Analog Devices
DS18B20Z+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
ULN2803A
Texas Instruments
ULN2803A by Texas Instruments is a peripheral driver with 8 functions. It has a max supply voltage of 3V and can operate in temperatures ranging from -40 to 85°C. This IC is commonly used as a buffer or inverter based peripheral driver for various applications.
2N2222A
Fairchild Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Diotec Semiconductor Ag
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;
BSS123,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;
LM107H
General Electric Solid State
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Minimum Voltage Gain: 25000;
M24308/2-1F
Cinch Connectivity Solutions
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Body Depth: .375 inch;
STM32H743BIT6
STMicroelectronics
STM32H743BIT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 208 terminals, and 1085440 bytes of RAM. It features 2 DAC channels, 32 ADC channels, and operates at a max clock frequency of 48 MHz. Ideal for industrial applications requiring high-speed processing and extensive peripheral connectivity.
BSS138
Onsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;
FDD5614P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Terminal Form: GULL WING;
PAP-06V-S
J S T Mfg
PAP-06V-S by J S T Mfg is a 6-contact BOARD CONNECTOR with 94V-0 UL Flammability Code. It has FEMALE contacts, CRIMP termination, and comes WITH CABLE ASSEMBLY for CABLE mounting applications.
LM358AN
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Daco Semiconductor
DS18B20
Maxim Integrated
DS18B20 by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Commonly used in applications requiring precise temperature monitoring like HVAC systems and industrial automation.
1N4148
Panjit International
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N7002,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
Philips Components
Yangzhou Yangjie Electronics
BF992TRL13
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; Terminal Form: GULL WING; No. of Elements: 1;
CLF1G0035S-100P
Ampleon Netherlands B V
RF Small Signal Field-Effect Transistors;
JAN2N3822
New England Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: METAL; Transistor Element Material: SILICON; No. of Elements: 1;
2N4416
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: DEPLETION MODE; No. of Terminals: 4; Maximum Operating Temperature: 175 Cel;
BF246C
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; JESD-30 Code: O-PBCY-T3; Qualification: Not Qualified;
2N5486PBFREE
Central Semiconductor
2N5486PBFREE by Central Semiconductor is an N-CHANNEL RF FET with a single configuration for AMPLIFIER applications. It offers a Min Power Gain of 10 dB, operates in DEPLETION MODE, and has a Max Drain Current of 0.03 A. With ULTRA HIGH FREQUENCY BAND compatibility, this transistor is ideal for high-frequency amplification needs.
MMBF4416LT1
MMBF4416LT1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage, 10 dB Power Gain, and operates in DEPLETION MODE. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND due to its small outline package style and high feedback capacitance of 0.8 pF.
2N3819
Nte Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; JEDEC-95 Code: TO-92; JESD-30 Code: O-PBCY-T3;
Solitron Devices
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Qualification: Not Qualified; Peak Reflow Temperature (C): NOT SPECIFIED;
BF545B,215
BF545B,215 by NXP Semiconductors is an N-CHANNEL RF Small Signal FET with a DEPLETION MODE. It operates in the VERY HIGH FREQUENCY BAND and has a 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications, this transistor comes in a PLASTIC/EPOXY package with GULL WING terminals.
BF862TRL
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; JESD-30 Code: R-PDSO-G3; Maximum Drain Current (ID): .04 A;
2N3823
Micro Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: JUNCTION; Maximum Feedback Capacitance (Crss): 2 pF;
2N3822
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 50 V; Terminal Form: WIRE; Qualification: Not Qualified;
National Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; JEDEC-95 Code: TO-72;
BF996ST/R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BLF188XRU
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Reference Standard: IEC-60134; Case Connection: SOURCE;
BF909AR
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Form: GULL WING; Package Shape: RECTANGULAR; Qualification: Not Qualified;
2N5486G
Rochester Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-92; Package Shape: ROUND; Terminal Form: THROUGH-HOLE;
ATF-55143
Broadcom
ATF-55143 by Broadcom is a N-CHANNEL RF FET used for amplification in C BAND applications. It has a min DS breakdown voltage of 5V and a power gain of 15.5 dB. This surface mount transistor operates in enhancement mode with a max drain current of 0.1A.
BF545A-TAPE-7
BF545A-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
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BF511,215
BF511,215 by NXP Semiconductors is an N-CHANNEL RF FET with a DEPLETION MODE. It operates in the VERY HIGH FREQUENCY BAND and has a max power dissipation of 0.25 W. Ideal for AMPLIFIER applications due to its small outline package style and GULL WING terminal form.
BF510,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Qualification: Not Qualified; Terminal Finish: Tin (Sn);
BF512,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Minimum DS Breakdown Voltage: 20 V; Terminal Position: DUAL;
BF512-T
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; Maximum Drain Current (ID): .03 A; Maximum Operating Temperature: 150 Cel;
BF512
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Maximum Drain Current (ID): .03 A;
BF511
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Transistor Application: AMPLIFIER; Package Body Material: PLASTIC/EPOXY;
BF512-TAPE-13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): .4 pF; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;
BF510-TAPE-7
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
BF511-T
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL;
BF511-TAPE-13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; Field Effect Transistor Technology: JUNCTION; Maximum Feedback Capacitance (Crss): .4 pF;
BF510T/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL;
BF511-TAPE-7
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
BF511TRL13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Operating Mode: DEPLETION MODE; Transistor Application: AMPLIFIER;
BF510TRL13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; Field Effect Transistor Technology: JUNCTION; Terminal Finish: TIN;
BF510-TAPE-13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; Package Body Material: PLASTIC/EPOXY; Maximum Feedback Capacitance (Crss): .4 pF;
BF511T/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Position: DUAL; Transistor Element Material: SILICON;
BF510
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Position: DUAL; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
BF510-T
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; No. of Terminals: 3; No. of Elements: 1;
BF510TRL
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL;
BF511TRL
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Transistor Element Material: SILICON; JESD-609 Code: e3;
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