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2SK192A-GR

Toshiba

2SK192A-GR by Toshiba

The Toshiba 2SK192A-GR is an N-channel RF FET with a max power dissipation of 0.2W and operating temperature of 125°C. Ideal for amplifier applications in the very high-frequency band, it features a single configuration with a junction technology and through-hole terminals.

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Ampacity Inc.

Singapore . 1,613 parts In-Stock

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Overview

Unleash the power of Toshiba's 2SK192A-GR RF Small Signal Field Effect Transistor! Perfect for amplifier applications, this N-channel transistor offers exceptional performance in the very high-frequency band. With a maximum power dissipation of 0.2W and operating temperature of up to 125°C, this transistor ensures reliability and efficiency in any project. Trust in Toshiba's superior quality and innovative technology to take your designs to the next level. Experience the difference with the 2SK192A-GR and see the unparalleled value it brings to your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel type offers efficient performance in amplification applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal functionality.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into various electronic devices.

Operating Mode: DEPLETION MODE

Depletion mode operation offers enhanced control and efficiency in signal amplification.

Maximum Power Dissipation (Abs): 0.2 W

With a high maximum power dissipation, this transistor can handle demanding tasks with ease.

Field Effect Transistor Technology: JUNCTION

Junction technology ensures high performance and reliability in signal amplification.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures without compromising performance.

Terminal Finish: TIN LEAD

Tin lead finish provides strong connections and conductivity for efficient signal transmission.

Maximum Feedback Capacitance (Crss): 0.65 pF

Low feedback capacitance ensures stable and precise amplification of signals.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2SK192A-GR attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Toshiba

Specs

Configuration:

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

.65 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SK192A-GR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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