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2SK197

Hitachi

2SK197 by Hitachi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Operating Mode: DEPLETION MODE; Maximum Drain Current (ID): .02 A;

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2

In-Stock Inventory

< 1k

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Vyrian

USA . 811 parts In-Stock

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811

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Corohmni

South Africa . 104 parts In-Stock

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$0.646

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$0.646

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Aztec Data Supply Inc.

USA . 3,527 parts In-Stock

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$1.260

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AZTECH Wire

Italy . 783 parts In-Stock

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$11.857

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Argo Parts USA

USA . 3,731 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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Continental Prestige Electronics

USA . 2,520 parts In-Stock

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Glotronic Ltd.

UK . 2,500 parts In-Stock

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Bastille Electronics

Australia . 42 parts In-Stock

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Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2SK197 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Hitachi

Specs

Configuration:

Maximum Drain Current (ID):

.02 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SK197 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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