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ATF-34143-TR1G

Broadcom

ATF-34143-TR1G by Broadcom

Broadcom's ATF-34143-TR1G is an N-channel RF FET with 5.5V DS breakdown voltage and 16dB power gain, ideal for amplifier applications in X-band frequencies. This single configuration transistor operates in depletion mode, with a max power dissipation of 0.725W at 160°C ambient temperature. It features a gull wing terminal form and matte tin finish in a small outline package style.

Median Price

$1.767

Lifecycle Status

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6

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Nova Conductors

Japan . 10 parts In-Stock

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Vyrian

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Digiode

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ACDS - Activité Composants Distribution Service

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Bristol Electronics

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Aranea Global

USA . 1,000 parts In-Stock

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$1.732

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$1.662

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AZTECH Wire

Italy . 805 parts In-Stock

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Decca Corp

Germany . 1,541 parts In-Stock

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$12.000

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$11.760

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Ampacity Inc.

Singapore . 437 parts In-Stock

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$18.050

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Continental Prestige Electronics

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Alle Elektronik GmbH

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GreenTree Electronics

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Argo Parts USA

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S.R.D Solutions

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Microchip USA

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Cyclops Electronics Ltd (Excess)

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Overview

Enhance your RF amplifier performance with the ATF-34143-TR1G by Broadcom. As a leading manufacturer in the industry, Broadcom delivers top-notch quality and reliability. This N-channel FET transistor is perfect for applications in the X band frequency range. With a high power gain of 16dB and a compact small outline package, this transistor offers exceptional value and performance. Upgrade your amplifier designs today with the ATF-34143-TR1G and experience superior signal amplification like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, making the product long-lasting and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have better performance characteristics compared to P-channel transistors, making this product a good choice for high-quality amplification.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, ensuring optimal performance for amplifying signals.

Minimum DS Breakdown Voltage: 5.5 V

With a minimum breakdown voltage of 5.5V, this transistor can handle higher voltages without experiencing failure, making it suitable for a variety of applications.

Maximum Power Dissipation Ambient: 0.725 W

With a maximum power dissipation of 0.725W, this transistor can handle higher power levels without overheating, ensuring stable operation.

Maximum Operating Temperature: 160 °C

With a maximum operating temperature of 160°C, this transistor can operate in high-temperature environments without compromising performance, making it suitable for a wide range of applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) ATF-34143-TR1G attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Broadcom

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

5.5 V

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

X BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

160 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.725 W

Minimum Power Gain (Gp):

16 dB

Qualification:

Not Qualified

Sub-Category:

FET RF Small Signals

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

20

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

ATF-34143-TR1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

Broadcom

Broadcom Inc, a Delaware corporation headquartered in San Jose, CA, is a global technology leader that designs, develops and supplies a broad range of semiconductor and infrastructure software solutions. Broadcom’s category-leading product portfolio serves critical markets including data center, networking, software, broadband, wireless, storage and industrial. Our solutions include data center networking and storage, enterprise and mainframe software focused on automation, monitoring and security, smartphone components, telecoms and factory automation.

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