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2N3819PBFREE

Central Semiconductor

2N3819PBFREE by Central Semiconductor

2N3819PBFREE by Central Semiconductor is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications in the VERY HIGH FREQUENCY BAND, it operates in DEPLETION MODE and has a Max Power Dissipation of 0.36W at 150°C.

Median Price

$1.890

Lifecycle Status

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3

In-Stock Inventory

1k+

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Mouser Electronics

USA . 7,991 parts In-Stock

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$1.890

100+ parts

$0.781

1k+ parts

$0.568

10k+ parts

$0.466

7,991

$1.890

$0.781

$0.568

$0.466

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Nova Conductors

Japan . 10 parts In-Stock

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$0.530

100+ parts

-

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10

$0.530

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Vyrian

USA . 9,004 parts In-Stock

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9,004

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Argo Parts USA

USA . 3,656 parts In-Stock

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$0.530

100+ parts

-

1k+ parts

-

10k+ parts

$0.514

3,656

$0.530

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$0.514

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.530

100+ parts

$0.519

1k+ parts

-

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100

$0.530

$0.519

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Continental Prestige Electronics

USA . 56 parts In-Stock

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$0.530

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$0.519

56

$0.530

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$0.519

Decca Corp

Germany . 6,076 parts In-Stock

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$1.110

100+ parts

$1.088

1k+ parts

$1.077

10k+ parts

-

6,076

$1.110

$1.088

$1.077

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Aztec Data Supply Inc.

USA . 2,302 parts In-Stock

1+ parts

$1.456

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2,302

$1.456

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Overview

Elevate your RF amplifier designs with the 2N3819PBFREE by Central Semiconductor. Known for their top-notch quality and reliability, Central Semiconductor delivers a range of applications in the RF Small Signal Field Effect Transistors category. This N-CHANNEL transistor operates in depletion mode, offering very high frequency band performance perfect for amplification needs. With a rugged plastic/epoxy package, matte tin finish, and maximum operating temperature of 150°C, this transistor ensures long-lasting durability and superior performance. Upgrade your projects with the 2N3819PBFREE and experience unmatched value and benefits that will take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures the package is lightweight and durable, making it suitable for portable and rugged applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are commonly used in amplifiers and switching applications, offering high input impedance and low output impedance.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to incorporate into systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks, ensuring optimal performance in amplifier circuits.

Minimum DS Breakdown Voltage: 25 V

With a minimum breakdown voltage of 25V, this FET can handle higher voltage levels without getting damaged.

Package Shape: ROUND

Round package shape allows for easy mounting and ensures uniform distribution of stresses during operation.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer ease of soldering and strong mechanical connections, enhancing the reliability of the product.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for simple biasing schemes and use in analog applications where a controlled channel resistence is desired.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for very high frequency applications, ensuring efficient signal processing and low signal distortion.

No. of Terminals: 3

Three terminals provide essential connections for power, signal, and biasing, enabling versatile circuit configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers ease of handling and installation, particularly in applications where space is a constraint.

Field Effect Transistor Technology: JUNCTION

Junction FET technology provides high input impedance, low output resistance, and good linearity, essential for amplifier circuits.

Maximum Power Dissipation Ambient: 0.36 W

With a maximum power dissipation of 0.36W, this FET can handle moderate power levels without overheating, ensuring reliability.

Maximum Operating Temperature: 150 °C

Operating temperature of 150°C allows for reliable performance in high-temperature environments, expanding the range of applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, stability, and reliability, making them a preferred choice for various electronic applications.

Minimum Operating Temperature: -65 °C

With a minimum operating temperature of -65°C, this FET can withstand cold environments and ensure operation in a wide temperature range.

Terminal Finish: MATTE TIN OVER NICKEL

Matte tin over nickel terminal finish provides good solderability and corrosion resistance, enhancing the longevity of the product.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and allows for efficient heat dissipation, improving overall system performance.

Maximum Feedback Capacitance (Crss): 4 pF

Low feedback capacitance helps in reducing parasitic capacitance effects, ensuring stable and high-frequency operation in amplifier circuits.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N3819PBFREE attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Central Semiconductor

Specs

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

4 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.36 W

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N3819PBFREE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Central Semiconductor

At Central Semiconductor, we’re serious about discrete semiconductors. Our business is the pursuit of perfection in the devices we manufacture; the delivery of our products; and the services we provide; all the time, every time. To suit varying applications, our products are available in surface mount, through-hole, and bare die. We produce a wide range of standard devices, but we excel in custom, special, and other niche products and services. As we listen to customers and monitor industry changes, our product design teams are constantly developing new products to meet customers’ ever-changing requirements, as well as industry trends. Discretes are our only business. We maintain an extensive inventory of raw materials and finished goods so customers don't wait weeks or months for what they need. We welcome smaller quantity and special orders that our competitors brush aside, and we're always eager to explore inquiries for non-standard requirements. Every customer has a skilled Customer Relationship Manager/Regional Sales Manager team to coordinate all needs. Customer-focused, obsessed with quality, and dedicated to your complete satisfaction; that's what makes us different.

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