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2N5245

Texas Instruments

2N5245 by Texas Instruments

2N5245 by Texas Instruments is an N-CHANNEL RF FET with 10 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a max power dissipation of 0.36 W at 150 °C. With a very high frequency band, this JUNCTION FET has 3 terminals and 1 pF Crss.

Median Price

$0.280

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Rochester

USA . 7,131 parts In-Stock

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$0.280

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$0.270

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$0.270

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American Microsemiconductor Inc.

USA . 107 parts In-Stock

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$7.250

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Vyrian

USA . 5,968 parts In-Stock

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Digiode

USA . 5,870 parts In-Stock

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Anansix

USA . 776 parts In-Stock

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ECAB

Sweden . 39 parts In-Stock

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Huijzer Components

Netherlands . 30 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 26 parts In-Stock

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Holdelec - ElecDif-Pro

France . 22 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 15 parts In-Stock

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Prism Electronics

USA . 14 parts In-Stock

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Manotoh

Italy . 10 parts In-Stock

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Electronics Depot

USA . 9 parts In-Stock

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LittleDiode

UK . 8 parts In-Stock

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MISTER SPROCKETS

USA . 8 parts In-Stock

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Electronic Expediters

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Distributors (Availability)

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Parana Technologies

USA . 301 parts In-Stock

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$1.124

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$1.951

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301

$1.124

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$1.951

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DigiPath Technology Company

USA . 765 parts In-Stock

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$1.238

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$1.139

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765

$1.238

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ChromeModa Solutions

Germany . 5,941 parts In-Stock

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$1.263

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$1.036

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IDEA Electronic Components Group

UK . 1,928 parts In-Stock

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$1.263

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$1.137

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Northwest PG Solutions

USA . 1,629 parts In-Stock

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$2.398

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AZTECH Wire

Italy . 262 parts In-Stock

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$5.813

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One Stop Electronics

USA . 286 parts In-Stock

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$7.050

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Ampacity Inc.

Singapore . 177 parts In-Stock

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$24.050

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QUARKTWIN TECHNOLOGY LTD

USA . 13,562 parts In-Stock

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Metaverse IC Inc.

Canada . 10,230 parts In-Stock

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Corphita

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Glotronic Ltd.

UK . 2,300 parts In-Stock

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Supply Digital

USA . 1,656 parts In-Stock

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Native Components

USA . 917 parts In-Stock

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Perfect Parts

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Assy Fe

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RTC Component Inc.

USA . 2 parts In-Stock

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Overview

Unleash the power of innovation with Texas Instruments' 2N5245 RF Small Signal Field Effect Transistor! This high-quality N-CHANNEL transistor is designed for maximum performance, making it ideal for amplifier applications in the VERY HIGH FREQUENCY BAND. With a minimum power gain of 10 dB and a maximum power dissipation of 0.36 W, this transistor offers unparalleled value and benefits to customers seeking reliable and efficient solutions. Trust in Texas Instruments' expertise and revolutionize your projects with the 2N5245!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various operating conditions.

Polarity or Channel Type: N-CHANNEL

Offers efficient signal amplification capabilities, making it ideal for amplifier applications.

Configuration: SINGLE

Simplifies the design and implementation process, making the transistor easy to use in various circuit configurations.

Transistor Application: AMPLIFIER

Specifically designed for signal amplification tasks, ensuring optimal performance in amplifier circuits.

Minimum Power Gain (Gp): 10 dB

Provides a minimum power gain of 10 dB, indicating strong amplification capabilities for enhanced signal strength.

Package Shape: ROUND

Allows for efficient space utilization and easy mounting in circular or cylindrical enclosures.

Terminal Form: WIRE

Enables convenient connection to external circuitry using wire terminals, facilitating installation and maintenance.

Operating Mode: DEPLETION MODE

Operates in depletion mode, ensuring stable and predictable transistor behavior in amplifier applications.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Supports operation in very high frequency bands, offering superior performance for high-frequency signal processing.

No. of Terminals: 3

Features 3 terminals for versatile connectivity options in amplifier circuits, enhancing flexibility in circuit design.

Maximum Power Dissipation (Abs): 0.36 W

Capable of handling a maximum power dissipation of 0.36 W, ensuring reliable operation under varying load conditions.

Package Style (Meter): CYLINDRICAL

Utilizes a cylindrical package style for compact and efficient integration into electronic devices or circuit layouts.

Field Effect Transistor Technology: JUNCTION

Utilizes junction technology for improved transistor performance and reliability in amplifier applications.

Maximum Operating Temperature: 150 °C

Operates effectively at temperatures up to 150°C, ensuring stability and performance in demanding environments.

Transistor Element Material: SILICON

Constructed with silicon material for enhanced conductivity and efficiency in signal amplification tasks.

Terminal Position: BOTTOM

Features bottom terminal positioning for easy connection to external circuitry and efficient heat dissipation.

Maximum Feedback Capacitance (Crss): 1 pF

Has a maximum feedback capacitance of 1 pF, reducing the risk of signal distortion and improving overall performance.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5245 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Configuration:

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

10 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5245 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-350-8299, 5961003508299, 5961-00-436-3317, 5961004363317, 5961-01-071-5344, 5961010715344

NIIN

003508299, 004363317, 010715344

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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