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2N5247

Texas Instruments

2N5247 by Texas Instruments

2N5247 by Texas Instruments is a N-CHANNEL FET with 10 dB Gp, operating in DEPLETION MODE. It's used as an AMPLIFIER in the VERY HIGH FREQUENCY BAND. With a max power dissipation of 0.36 W and Crss of 1 pF, it's ideal for RF applications.

Median Price

$0.211

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 7,000 parts In-Stock

1+ parts

-

100+ parts

$0.211

1k+ parts

$0.175

10k+ parts

$0.156

7,000

-

$0.211

$0.175

$0.156

DigiKey

USA . 7,000 parts In-Stock

1+ parts

-

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$0.260

7,000

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$0.260

Verical

USA . 5,000 parts In-Stock

1+ parts

-

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$0.195

5,000

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$0.195

Distributors (In-Stock)

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Digiode

USA . 4,080 parts In-Stock

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$0.164

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-

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4,080

$0.164

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Vyrian

USA . 2,681 parts In-Stock

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$0.173

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2,681

$0.173

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Bristol Electronics

USA . 8,000 parts In-Stock

1+ parts

$0.660

100+ parts

$0.264

1k+ parts

$0.185

10k+ parts

$0.172

8,000

$0.660

$0.264

$0.185

$0.172

ACDS - Activité Composants Distribution Service

France . 8,000 parts In-Stock

1+ parts

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Dan-Mar Components

USA . 8,000 parts In-Stock

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Electronic Expediters

USA . 3,070 parts In-Stock

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3,070

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Resion

USA . 450 parts In-Stock

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450

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PUI

USA . 253 parts In-Stock

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253

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Anansix

USA . 140 parts In-Stock

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140

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Mil-Aero Solutions, Inc.

USA . 28 parts In-Stock

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28

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Microfarads

USA . 27 parts In-Stock

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LittleDiode

UK . 1 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 3,817 parts In-Stock

1+ parts

$0.156

100+ parts

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3,817

$0.156

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Parana Technologies

USA . 29 parts In-Stock

1+ parts

$1.584

100+ parts

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$2.219

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29

$1.584

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$2.219

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DigiPath Technology Company

USA . 771 parts In-Stock

1+ parts

$1.744

100+ parts

$1.605

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771

$1.744

$1.605

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ChromeModa Solutions

Germany . 5,556 parts In-Stock

1+ parts

$1.780

100+ parts

$1.460

1k+ parts

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5,556

$1.780

$1.460

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IDEA Electronic Components Group

UK . 1,511 parts In-Stock

1+ parts

$1.780

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$1.602

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1,511

$1.780

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$1.602

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QUARKTWIN TECHNOLOGY LTD

USA . 26,694 parts In-Stock

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Metaverse IC Inc.

Canada . 6,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,117 parts In-Stock

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Assy Fe

Spain . 3,458 parts In-Stock

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3,458

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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1,970

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Supply Digital

USA . 667 parts In-Stock

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667

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Native Components

USA . 398 parts In-Stock

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$4.142

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398

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$4.142

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Northwest PG Solutions

USA . 310 parts In-Stock

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$4.185

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310

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$4.185

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Overview

Unleash the power of cutting-edge technology with the Texas Instruments 2N5247 RF Small Signal Field Effect Transistor. Designed for maximum performance and reliability, this N-CHANNEL transistor is perfect for amplifier applications in the VERY HIGH FREQUENCY BAND. With a minimum power gain of 10 dB and a maximum power dissipation of 0.36 W, this transistor offers unmatched quality and efficiency. Elevate your projects to the next level with the superior value and benefits that the 2N5247 provides. Trust in Texas Instruments for premium components that deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package ensures durability and can withstand various environmental conditions, making it a reliable choice for long-term usage.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance characteristics compared to P-channel transistors, providing efficient amplification in various applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes it easier to integrate into different electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring high-quality signal amplification with a minimum power gain of 10 dB.

Maximum Power Dissipation (Abs): 0.36 W

With a maximum power dissipation of 0.36 W, this FET can handle high-power loads and operate efficiently without overheating.

Maximum Operating Temperature: 150 °C

The FET can operate at high temperatures up to 150°C, allowing it to be used in a wide range of industrial and commercial applications.

Maximum Feedback Capacitance (Crss): 1 pF

The low feedback capacitance of 1 pF ensures stable performance and minimal signal distortion, making it suitable for high-frequency applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5247 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Configuration:

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

10 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5247 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-095-0871, 5961010950871

NIIN

010950871

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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