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BF908-TAPE-13

NXP Semiconductors

BF908-TAPE-13 by NXP Semiconductors

BF908-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 12V min DS breakdown voltage, operates in the ultra-high frequency band, and supports dual gate depletion mode. This surface-mount transistor ensures efficient performance with a max temp of 150 °C.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 3,859 parts In-Stock

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Vyrian

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Anansix

USA . 85 parts In-Stock

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Native Components

USA . 489 parts In-Stock

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$0.633

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Northwest PG Solutions

USA . 398 parts In-Stock

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$0.696

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One Stop Electronics

USA . 326 parts In-Stock

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$46.050

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UNI Independent Distributors

Spain . 2,056 parts In-Stock

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Corphita

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Overview

Elevate your designs with the BF908-TAPE-13 from NXP Semiconductors, a leader in reliable performance and innovation. This ultra-high frequency RF FET offers unmatched quality for amplifiers, ensuring precision and efficiency in various applications. With its compact design and built-in diode, it simplifies integration while delivering exceptional value. Trust NXP to power your projects with cutting-edge technology, enhancing reliability and performance like never before!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures protection against environmental factors, making the product reliable in various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally provide better performance and are widely used in various applications including switching and amplification.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances circuit design flexibility and simplifies the implementation in various electronic applications.

Transistor Application: AMPLIFIER

Suitable for amplification purposes, making this transistor ideal for audio, radio frequency, and signal processing applications.

Surface Mount: YES

Surface mount technology allows for smaller PCB designs and improved component placement, enhancing overall compactness and efficiency.

Minimum DS Breakdown Voltage: 12 V

A minimum breakdown voltage of 12V allows for reliable operation in a variety of circuits while ensuring protection against voltage spikes.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy placement on PCBs and efficient space utilization in compact designs.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical stability and are ideal for high-density surface mount applications.

Operating Mode: DUAL GATE, DEPLETION MODE

This mode allows for enhanced control in RF applications, improving performance in signal amplification and modulation.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra high frequency band makes this FET suitable for high-speed applications such as telecommunication and broadcasting.

No. of Terminals: 4

The four-terminal configuration provides flexibility in circuit design and allows for more complex operations while maintaining simplicity.

Package Style (Meter): SMALL OUTLINE

The small outline package ensures a compact design, perfect for space-constrained applications without compromising performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology offers high input impedance and low power consumption, making this FET ideal for low-noise applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET is suitable for high-temperature environments, enhancing its application scope.

Transistor Element Material: SILICON

Silicon is a standard material known for its efficiency and reliability in semiconductor devices, increasing the lifespan of the FET.

Maximum Drain Current (ID): 0.04 A

A maximum drain current of 0.04 A supports various electronic applications while balancing performance with thermal considerations.

Terminal Position: DUAL

The dual terminal position aids in improving circuit layout efficiency and helps in achieving better thermal management.

Case Connection: SOURCE

Source connection facilitates easy implementation in circuits, enhancing the convenience of design and application.

Maximum Feedback Capacitance (Crss): 0.045 pF

Low feedback capacitance minimizes signal distortion, making this FET an excellent choice for high-frequency applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF908-TAPE-13 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (ID):

.04 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.045 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF908-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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