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BF904,215

NXP Semiconductors

BF904,215 by NXP Semiconductors

NXP Semiconductors' BF904,215 is an N-CHANNEL RF FET with a 7V DS breakdown voltage. It operates in the UHF band, has a max drain current of 0.03A, and features a built-in diode for amplifier applications. The transistor is surface mountable, with GULL WING terminals and a max operating temperature of 150°C.

Median Price

$0.150

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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Rochester

USA . 1,224 parts In-Stock

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Chip1Stop

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Digiode

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Anansix

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Vyrian

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Ashlea Components Ltd

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Bristol Electronics

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Nova Conductors

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Modulus Dynamics

Lithuania . 11,019 parts In-Stock

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Corohmni

South Africa . 700 parts In-Stock

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AZTECH Wire

Italy . 265 parts In-Stock

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Ampacity Inc.

Singapore . 5 parts In-Stock

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Argo Parts USA

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Aranea Global

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Overview

Unlock unparalleled performance with the BF904,215 RF Small Signal Field Effect Transistor from NXP Semiconductors. Designed for ultra-high frequency applications, this single-channel transistor with a built-in diode offers exceptional amplification capabilities in a compact package. Whether you're working on communication systems or radar technology, this transistor is the key to achieving superior results. Trust NXP's reputation for quality and innovation, and experience the difference with the BF904,215.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance and lower leakage compared to P-channel transistors.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

Allows for easy and convenient mounting on a circuit board, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 7 V

Suitable for applications requiring a minimum breakdown voltage of 7V, providing reliable operation.

Operating Mode: DUAL GATE, ENHANCEMENT MODE

Enhancement mode operation allows for better control of the transistor, while dual gate configuration offers versatile use.

Maximum Drain Current (ID): 0.03 A

With a maximum drain current of 0.03A, this FET can handle moderate current loads efficiently.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes MOSFET technology for efficient switching and low power consumption in various applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF904,215 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

7 V

Maximum Drain Current (Abs) (ID):

.03 A

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.035 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF904,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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