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VMMK-1218-TR1G

Broadcom

VMMK-1218-TR1G by Broadcom

Broadcom's VMMK-1218-TR1G is an N-channel RF FET with a min DS breakdown voltage of 5V and power gain of 6.7dB, ideal for amplifier applications in the Ku band. This single configuration transistor operates in enhancement mode, with a max drain current of 0.1A and high electron mobility technology for efficient performance.

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Overview

Built by industry leader Broadcom, the VMMK-1218-TR1G offers unparalleled quality and reliability as a top-of-the-line RF Small Signal Field Effect Transistor. Ideal for amplifier applications in the KU band, this N-channel transistor boasts a high power gain of 6.7 dB and a minimum DS breakdown voltage of 5 V. With a compact chip carrier package and matte tin finish, this transistor is designed for maximum performance in a variety of settings. Experience the superior technology and exceptional value of the VMMK-1218-TR1G from Broadcom today.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors are known for their high input impedance and low output impedance, making them suitable for high frequency applications such as amplifiers.

Minimum DS Breakdown Voltage: 5 V

The minimum breakdown voltage of 5 V ensures that the transistor can handle higher voltages without breakdown, making it reliable for various amplifier applications.

Minimum Power Gain (Gp): 6.7 dB

With a minimum power gain of 6.7 dB, this transistor provides amplification of the input signal, making it ideal for amplifier circuits where signal strength needs to be boosted.

Maximum Power Dissipation Ambient: 0.3 W

With a maximum power dissipation of 0.3 W, this transistor can handle a moderate amount of power without overheating, ensuring stable performance in amplifier applications.

Maximum Drain Current (ID): 0.1 A

The maximum drain current of 0.1 A indicates the amount of current the transistor can safely handle, making it suitable for low to moderate power applications in amplifiers.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) VMMK-1218-TR1G attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Broadcom

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

5 V

Maximum Drain Current (Abs) (ID):

.1 A

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

KU BAND

JESD-30 Code:

R-XBCC-N3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.3 W

Minimum Power Gain (Gp):

6.7 dB

Qualification:

Not Qualified

Sub-Category:

FET RF Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

VMMK-1218-TR1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Broadcom

Broadcom Inc, a Delaware corporation headquartered in San Jose, CA, is a global technology leader that designs, develops and supplies a broad range of semiconductor and infrastructure software solutions. Broadcom’s category-leading product portfolio serves critical markets including data center, networking, software, broadband, wireless, storage and industrial. Our solutions include data center networking and storage, enterprise and mainframe software focused on automation, monitoring and security, smartphone components, telecoms and factory automation.

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