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BLF521

NXP Semiconductors

BLF521 by NXP Semiconductors

The NXP Semiconductors BLF521 is an N-CHANNEL RF FET with 40V DS breakdown voltage and 10dB power gain. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a 1A max drain current and operates at up to 200°C.

Median Price

$96.230

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 522 parts In-Stock

1+ parts

$96.230

100+ parts

$90.460

1k+ parts

$84.680

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522

$96.230

$90.460

$84.680

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DigiKey

USA . 430 parts In-Stock

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430

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Nova Conductors

Japan . 300 parts In-Stock

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$92.383

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300

$92.383

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Digiode

USA . 2,457 parts In-Stock

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$96.748

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$96.748

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Vyrian

USA . 8,849 parts In-Stock

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VNN

France . 5,369 parts In-Stock

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5,369

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Anansix

USA . 2,332 parts In-Stock

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DigiKey Marketplace

USA . 121 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 221 parts In-Stock

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$16.080

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221

$16.080

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Aranea Global

USA . 2,000 parts In-Stock

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$90.536

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$86.914

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2,000

$90.536

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$86.914

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Corphita

USA . 2,868 parts In-Stock

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$91.656

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2,868

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Microchip USA

USA . 2,756 parts In-Stock

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$224.848

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2,756

$224.848

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UNI Independent Distributors

Spain . 3,233 parts In-Stock

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Perfect Parts

USA . 125 parts In-Stock

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Overview

Elevate your RF signal amplification with the BLF521 by NXP Semiconductors. Crafted with precision and expertise, this N-CHANNEL FET offers unparalleled performance in the ultra-high frequency band. Whether you're amplifying signals for communication systems or radar applications, the BLF521 delivers reliable power gain and breakthrough technology. Trust NXP Semiconductors to bring you top-tier quality and innovation in every single package, setting new standards in the industry. Experience seamless integration and exceptional results with the BLF521 - the ultimate choice for demanding RF applications.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors generally offer better performance compared to P-Channel transistors in amplifier applications.

Minimum DS Breakdown Voltage: 40 V

With a high breakdown voltage, this transistor can handle higher voltages without breakdown, ensuring reliable operation.

Minimum Power Gain (Gp): 10 dB

The minimum power gain of 10 dB indicates good amplification capabilities, making it suitable for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor is optimized for signal amplification tasks.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra-high frequency band allows for high-speed signal processing, making it ideal for high-frequency applications.

Maximum Power Dissipation (Abs): 10 W

With a maximum power dissipation of 10 W, this transistor can handle high power levels without overheating.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BLF521 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

1 A

Maximum Drain Current (ID):

1 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-CRDB-F4

Moisture Sensitivity Level (MSL):

NOT APPLICABLE

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

10 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

10 dB

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLF521 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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