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BF245BZL1

Onsemi

BF245BZL1 by Onsemi

BF245BZL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features DEPLETION MODE operation and 0.1A ID. Package: PLASTIC/EPOXY, ROUND shape, THROUGH-HOLE terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,938 parts In-Stock

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Vyrian

USA . 716 parts In-Stock

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TANS Electronics

Latvia . 7,782 parts In-Stock

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SupplyDigital Components

Austria . 7,130 parts In-Stock

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Problanco Electronics

Mexico . 2,556 parts In-Stock

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Kulean Microsystems

USA . 2,273 parts In-Stock

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Northwest PG Solutions

USA . 1,803 parts In-Stock

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Corphita

USA . 1,038 parts In-Stock

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Native Components

USA . 845 parts In-Stock

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UHIMA Technologies

Türkiye . 788 parts In-Stock

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Corohmni

South Africa . 163 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the BF245BZL1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in every product they produce. The BF245BZL1 falls under the category of RF Small Signal Field Effect Transistors (FET), making it ideal for amplifier applications in the ultra-high frequency band. With a minimum DS Breakdown Voltage of 30V and a maximum Drain Current of 0.1A, this transistor offers unmatched performance and efficiency. Elevate your projects to the next level with the BF245BZL1 by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for easy handling and long-lasting performance.

Polarity or Channel Type: N-CHANNEL

Provides efficient amplification and allows for easy integration into circuit designs.

Configuration: SINGLE

Simplified design for ease of use and straightforward installation.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications, ensuring optimal performance.

Minimum DS Breakdown Voltage: 30 V

Can handle high voltages without breakdown, ensuring reliability in operation.

Package Shape: ROUND

Compact design for efficient use of space and easy mounting in various devices.

Terminal Form: THROUGH-HOLE

Simple and secure terminal format for easy soldering and connection.

Operating Mode: DEPLETION MODE

Provides high gain and low noise performance, ideal for amplifier applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-frequency applications such as wireless communication and signal processing.

No. of Terminals: 3

Optimal number of terminals for basic connections and functionality.

Package Style (Meter): CYLINDRICAL

Streamlined design for easy handling and installation in various devices.

Field Effect Transistor Technology: JUNCTION

Reliable technology for efficient amplification and signal processing.

Transistor Element Material: SILICON

High-quality material for stable and consistent performance over time.

Terminal Finish: TIN LEAD

Provides reliable connections and solder joints for long-term use.

Maximum Drain Current (ID): 0.1 A

Capable of handling moderate current levels for various electronic applications.

Terminal Position: BOTTOM

Convenient positioning for easy installation and connection in circuits.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF245BZL1 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF245BZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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