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BF244BRLRA

Onsemi

BF244BRLRA by Onsemi

BF244BRLRA by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,930 parts In-Stock

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Digiode

USA . 1,677 parts In-Stock

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TANS Electronics

Latvia . 7,870 parts In-Stock

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Kulean Microsystems

USA . 6,960 parts In-Stock

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Problanco Electronics

Mexico . 6,489 parts In-Stock

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SupplyDigital Components

Austria . 3,555 parts In-Stock

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Corphita

USA . 1,687 parts In-Stock

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Northwest PG Solutions

USA . 1,629 parts In-Stock

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UHIMA Technologies

Türkiye . 936 parts In-Stock

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Corohmni

South Africa . 398 parts In-Stock

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Native Components

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Overview

Unlock the potential of your RF amplifier projects with the BF244BRLRA by Onsemi. Manufactured to the highest quality standards, this N-CHANNEL FET offers superior performance in the ultra-high-frequency band. Whether you're designing audio equipment, telecommunications devices, or instrumentation, this transistor's depletion mode and high breakdown voltage of 30V ensure reliable operation. Experience the value of Onsemi's expertise and innovation with the BF244BRLRA, your go-to solution for amplification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors typically offer better performance in terms of speed and efficiency compared to P-CHANNEL transistors, making this product suitable for high-frequency applications.

Configuration: SINGLE

The single configuration simplifies circuit design and layout, making it easy to integrate this transistor into various amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides the amplification needed for signals in electronic circuits.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can handle higher voltage levels without damage, ensuring reliability in operation.

Package Shape: ROUND

The round package shape allows for easy mounting and installation in electronic circuits, providing a compact and space-efficient design.

Terminal Form: THROUGH-HOLE

The through-hole terminals make it easy to solder the transistor onto a circuit board, providing a secure connection for reliable performance.

Operating Mode: DEPLETION MODE

The depletion mode operation of this transistor allows for control over current flow, making it suitable for a range of amplifier applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra high frequency applications, this transistor can handle high-speed signals with precision and accuracy.

No. of Terminals: 3

With 3 terminals, this transistor provides the necessary connections for input, output, and power, ensuring comprehensive functionality in amplifier circuits.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a sleek and compact design, ideal for space-constrained amplifier applications.

Field Effect Transistor Technology: JUNCTION

The junction technology used in this transistor offers high performance and reliability, making it a suitable choice for demanding amplifier applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its stability and efficiency, making this transistor a reliable choice for amplifier applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides a secure and durable connection, ensuring stable performance in amplifier circuits.

Maximum Drain Current (ID): 0.1 A

With a maximum drain current of 0.1A, this transistor can handle moderate power levels, making it suitable for a range of amplifier applications.

Terminal Position: BOTTOM

The bottom terminal position allows for easy integration into circuit layouts, providing flexibility in amplifier design and construction.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF244BRLRA attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF244BRLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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