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2N5484RLRM

Onsemi

2N5484RLRM by Onsemi

2N5484RLRM by Onsemi is an N-CHANNEL RF FET with 16 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers 0.03 A ID and 1 pF Crss at ULTRA HIGH FREQUENCY BAND. Packaged in PLASTIC/EPOXY, it has a ROUND shape with THROUGH-HOLE terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,764 parts In-Stock

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Vyrian

USA . 1,064 parts In-Stock

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SupplyDigital Components

Austria . 3,662 parts In-Stock

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Problanco Electronics

Mexico . 2,348 parts In-Stock

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TANS Electronics

Latvia . 2,128 parts In-Stock

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Kulean Microsystems

USA . 1,242 parts In-Stock

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Northwest PG Solutions

USA . 792 parts In-Stock

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Native Components

USA . 622 parts In-Stock

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Corphita

USA . 341 parts In-Stock

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UHIMA Technologies

Türkiye . 333 parts In-Stock

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Corohmni

South Africa . 136 parts In-Stock

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Overview

Enhance your amplifier performance with the 2N5484RLRM RF Small Signal Field Effect Transistor by Onsemi. Designed for ultra high frequency applications, this N-channel transistor offers a minimum power gain of 16 dB, ensuring optimal signal amplification. With a durable plastic/epoxy package body and junction technology, this transistor provides reliable performance in a variety of electronic devices. Trust Onsemi's expertise in semiconductor manufacturing to deliver high-quality components that meet your design needs. Elevate your amplifier projects with the 2N5484RLRM and experience superior signal processing capabilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for portable applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors offer better electron mobility and higher conductivity, resulting in improved performance compared to P-channel transistors.

Configuration: SINGLE

Single configuration simplifies the design and makes the transistor easy to use in various amplifier circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying electrical signals.

Minimum Power Gain (Gp): 16 dB

With a minimum power gain of 16 dB, this transistor can boost the input signal power effectively, making it suitable for signal amplification.

Package Shape: ROUND

The round package shape allows for easy mounting and soldering onto circuit boards, simplifying the assembly process.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer strong mechanical connections and are easy to solder, ensuring reliable performance in various applications.

Operating Mode: DEPLETION MODE

Depletion mode operation provides high input impedance and low noise characteristics, making it ideal for amplifier circuits.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra-high frequency operation, enabling the transistor to handle high-frequency signals with low distortion.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in connecting to external circuits and allows for versatile use in various applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is space-efficient and allows for easy integration into compact electronic devices.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high input impedance and low noise characteristics, ensuring accurate signal amplification.

Transistor Element Material: SILICON

Silicon material provides reliable and consistent performance, suitable for a wide range of operating conditions and environments.

Maximum Drain Current (ID): 0.03 A

With a maximum drain current of 0.03A, this transistor can handle moderate power levels, making it suitable for small signal amplification.

Terminal Position: BOTTOM

Bottom terminal position simplifies the PCB layout and allows for easy thermal management, ensuring stable operation under varying conditions.

Maximum Feedback Capacitance (Crss): 1 pF

Low feedback capacitance helps in reducing signal distortion and improving stability in amplifier circuits, ensuring reliable performance.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5484RLRM attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Minimum Power Gain (Gp):

16 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5484RLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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