Loading...

BF245RL

Onsemi

BF245RL by Onsemi

BF245RL by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 511 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

511

-

-

-

-

Digiode

USA . 326 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

326

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 282 parts In-Stock

1+ parts

$0.047

100+ parts

-

1k+ parts

-

10k+ parts

$0.046

282

$0.047

-

-

$0.046

TANS Electronics

Latvia . 7,317 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,317

-

-

-

-

Kulean Microsystems

USA . 5,302 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,302

-

-

-

-

SupplyDigital Components

Austria . 4,495 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,495

-

-

-

-

Problanco Electronics

Mexico . 4,076 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,076

-

-

-

-

Corphita

USA . 1,870 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,870

-

-

-

-

Northwest PG Solutions

USA . 1,194 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,194

-

-

-

-

UHIMA Technologies

Türkiye . 715 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

715

-

-

-

-

Corohmni

South Africa . 58 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

58

-

-

-

-

Overview

Enhance your RF signal applications with the BF245RL by Onsemi, a high-quality N-channel field effect transistor designed for amplification in ultra-high frequency bands. Manufactured by Onsemi, known for their expertise in semiconductor technology, this single configuration transistor offers reliable performance and durability. With a minimum DS breakdown voltage of 30V, the BF245RL provides exceptional value and benefits for various amplifier applications. Upgrade your projects with this efficient and versatile transistor from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have faster switching speeds and higher efficiency compared to P-channel transistors, making this product suitable for high-performance applications.

Configuration: SINGLE

Simplifies circuit design and allows for easy integration into existing systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, ensuring optimal performance in signal amplification circuits.

Minimum DS Breakdown Voltage: 30 V

Can handle higher voltages without breakdown, providing a wider range of operating voltages for the transistor.

Package Shape: ROUND

Compact and space-saving design, suitable for applications where space is limited.

Terminal Form: THROUGH-HOLE

Facilitates easy and secure soldering onto circuit boards for reliable connections.

Operating Mode: DEPLETION MODE

Allows for easy biasing and control of the transistor, making it suitable for various depletion mode amplifier circuits.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of operating at ultra-high frequencies, making it suitable for high-frequency signal processing applications.

No. of Terminals: 3

Simple and straightforward pin configuration, making it easy to interface with other components in the circuit.

Package Style (Meter): CYLINDRICAL

Durable and rugged packaging design, suitable for applications where the transistor may be subjected to harsh environmental conditions.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high input impedance and low output impedance, making this transistor suitable for high-gain amplifier circuits.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them suitable for a wide range of electronic applications.

Terminal Finish: TIN LEAD

Provides good conductivity and corrosion resistance for reliable connections and long-term performance.

Maximum Drain Current (ID): 0.1 A

Can handle up to 0.1 ampere of current, making it suitable for low-power amplifier and switching applications.

Terminal Position: BOTTOM

Facilitates easy mounting and soldering on PCBs, allowing for efficient and reliable assembly of electronic circuits.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF245RL attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF245RL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20