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BF245BRL1

Onsemi

BF245BRL1 by Onsemi

BF245BRL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,352 parts In-Stock

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Digiode

USA . 54 parts In-Stock

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Native Components

USA . 620 parts In-Stock

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$27.863

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620

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Northwest PG Solutions

USA . 794 parts In-Stock

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$30.650

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$27.585

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794

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Problanco Electronics

Mexico . 3,690 parts In-Stock

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TANS Electronics

Latvia . 2,487 parts In-Stock

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Kulean Microsystems

USA . 1,104 parts In-Stock

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UHIMA Technologies

Türkiye . 609 parts In-Stock

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Corphita

USA . 388 parts In-Stock

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Corohmni

South Africa . 331 parts In-Stock

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SupplyDigital Components

Austria . 85 parts In-Stock

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Overview

Enhance your amplifier projects with the BF245BRL1 by Onsemi, a top-quality RF Small Signal Field Effect Transistor. With a reputation for reliability and innovation, Onsemi delivers cutting-edge technology in every product they offer. Ideal for ultra-high frequency applications, this transistor boasts a single configuration and N-channel polarity for optimal performance. Trust Onsemi to provide the value, benefits, and advantages you need to take your projects to the next level. Upgrade your amplifier designs today with the BF245BRL1!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the transistor, ensuring reliable performance and durability.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL type transistors offer lower ON resistance and higher switching speeds, making them suitable for various high-frequency applications.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation, making the product easier to use for amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Minimum DS Breakdown Voltage: 30 V

The minimum breakdown voltage of 30V allows for safe and reliable operation in various amplifier circuits without risking damage.

Package Shape: ROUND

Round package shape provides uniform distribution of stresses and allows for easy integration into circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals simplify the process of soldering and connecting the transistor to circuit boards, improving overall reliability.

Operating Mode: DEPLETION MODE

Depletion mode operation offers high input impedance and low output impedance, making it suitable for high-frequency amplifier applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra-high-frequency applications, ensuring efficient signal amplification and transmission in the specified frequency range.

No. of Terminals: 3

Having 3 terminals allows for versatile connectivity options and facilitates integration into different circuit configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact form factor, ideal for space-constrained amplifier circuit designs.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers consistent performance and enhanced reliability, ensuring stable operation in amplifier applications.

Transistor Element Material: SILICON

Silicon material is known for its high conductivity and temperature stability, making it ideal for high-frequency amplifier circuits.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and corrosion resistance, ensuring a reliable connection between the transistor and circuit boards.

Maximum Drain Current (ID): 0.1 A

With a maximum drain current of 0.1A, the transistor can handle a reasonable amount of current, suitable for various amplifier applications.

Terminal Position: BOTTOM

Bottom terminal position allows for efficient heat dissipation and helps in maintaining the overall temperature stability of the transistor during operation.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF245BRL1 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF245BRL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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