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ATF-36077-TR1

Broadcom

ATF-36077-TR1 by Broadcom

Broadcom ATF-36077-TR1 is an N-channel FET with 3V DS breakdown voltage and 11dB power gain, ideal for amplifier applications in KU band. It features a ceramic-metal sealed co-fired package, flat terminals, and gold finish, operating in depletion mode with high electron mobility technology.

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Vyrian

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Nova Conductors

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AZTECH Wire

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Decca Corp

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Continental Prestige Electronics

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Glotronic Ltd.

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Overview

Upgrade your RF amplifier performance with the ATF-36077-TR1 from Broadcom. As a leader in semiconductor technology, Broadcom delivers top-quality RF Small Signal Field Effect Transistors that are perfect for a wide range of applications in the KU Band. With a minimum power gain of 11 dB and high electron mobility technology, this N-channel transistor offers unmatched reliability and performance. Trust Broadcom to provide cutting-edge solutions that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired package body material ensures the transistor is durable and resistant to extreme conditions, making it reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance characteristics and higher efficiency compared to P-channel transistors, making them a preferred choice for amplifiers.

Configuration: SINGLE

Single configuration transistors are easier to work with and integrate into circuits, making them a good choice for amplifiers where simplicity and efficiency are key.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, this transistor will deliver optimal performance and power gain in amplification tasks.

Surface Mount: YES

Being surface mountable makes this transistor easy to install on circuit boards, saving space and allowing for efficient and compact electronic designs.

Minimum DS Breakdown Voltage: 3 V

The minimum breakdown voltage of 3 V ensures the reliability and safety of the transistor in various operating conditions, providing protection against voltage spikes.

Minimum Power Gain (Gp): 11 dB

With a minimum power gain of 11 dB, this transistor offers high amplification capability, making it suitable for applications where signal enhancement is crucial.

Package Shape: ROUND

The round package shape ensures uniform distribution of heat and easy mounting in circular layouts, enhancing thermal performance and overall design aesthetics.

Terminal Form: FLAT

The flat terminal form simplifies connection and soldering processes, providing a secure and stable electrical connection for improved signal transmission.

Operating Mode: DEPLETION MODE

Depletion mode operation offers better control and stability in amplifier circuits, ensuring consistent performance and efficient power handling.

Highest Frequency Band: KU BAND

Designed for use in the Ku band frequency range, this transistor is optimized for high-frequency applications, such as satellite communication and radar systems.

No. of Terminals: 4

Having 4 terminals provides flexibility in circuit design and enables proper connection of the transistor to other components, enhancing overall functionality.

Package Style (Meter): DISK BUTTON

The disk button package style offers a compact and low-profile design, ideal for space-constrained applications where size and weight are critical factors.

Field Effect Transistor Technology: HIGH ELECTRON MOBILITY

Utilizing high electron mobility technology results in superior performance, lower noise, and higher efficiency, making this transistor a top choice for demanding amplifier applications.

Transistor Element Material: GALLIUM ARSENIDE

Gallium arsenide material ensures high electron mobility and excellent RF performance, making this transistor ideal for applications requiring high-frequency operation.

Terminal Finish: GOLD

Gold terminal finish provides excellent conductivity, corrosion resistance, and reliable solder joints, ensuring long-term performance and signal integrity.

Terminal Position: RADIAL

Radial terminal position facilitates easy mounting and connection in circuits, improving installation efficiency and enabling effective heat dissipation.

Case Connection: SOURCE

The source case connection allows for efficient heat dissipation and electrical conduction, ensuring optimal performance and reliability in amplifier applications.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes, ensuring reliable and robust solder joints for long-term use.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) ATF-36077-TR1 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Broadcom

Specs

Additional Features:

LOW NOISE

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

3 V

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

KU BAND

JESD-30 Code:

O-CRDB-F4

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

DISK BUTTON

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Minimum Power Gain (Gp):

11 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

GOLD

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

ATF-36077-TR1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Broadcom

Broadcom Inc, a Delaware corporation headquartered in San Jose, CA, is a global technology leader that designs, develops and supplies a broad range of semiconductor and infrastructure software solutions. Broadcom’s category-leading product portfolio serves critical markets including data center, networking, software, broadband, wireless, storage and industrial. Our solutions include data center networking and storage, enterprise and mainframe software focused on automation, monitoring and security, smartphone components, telecoms and factory automation.

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