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ATF-38143-BLKG

Broadcom

ATF-38143-BLKG by Broadcom

Broadcom ATF-38143-BLKG is a N-CHANNEL FET for X BAND applications. Features 15 dB Gp, 4.5 V DS Breakdown Voltage, and 0.58 W Power Dissipation. Ideal for RF AMPLIFIER circuits with DEPLETION MODE operation in SMALL OUTLINE package.

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Vyrian

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Digiode

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Avant Electronics Limited

UK . 15 parts In-Stock

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Nova Conductors

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LittleDiode

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Aztec Data Supply Inc.

USA . 146 parts In-Stock

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$0.631

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Corohmni

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$1.527

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AZTECH Wire

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Decca Corp

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$15.000

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$14.700

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$14.553

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QUARKTWIN TECHNOLOGY LTD

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

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Overview

Discover the power and precision of the ATF-38143-BLKG by Broadcom, a top-tier manufacturer known for delivering high-quality RF Small Signal Field Effect Transistors. Ideal for amplifier applications in the X Band, this N-Channel transistor offers a minimum power gain of 15 dB and a breakthrough operating mode in depletion mode. With a compact rectangular package style and gull wing terminals, this transistor provides exceptional performance with a minimum DS breakdown voltage of 4.5V. Elevate your projects with the unmatched value and reliability of the ATF-38143-BLKG, designed to meet your needs with precision and efficiency.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and reliability for long-term use.

Polarity or Channel Type:

N-CHANNEL - Offers efficient signal amplification and low noise performance.

Configuration:

SINGLE - Simplifies circuit design and integration for ease of use.

Transistor Application:

AMPLIFIER - Ideal for amplifying weak signals in RF applications.

Surface Mount:

YES - Enables easy and secure placement on circuit boards for compact designs.

Minimum DS Breakdown Voltage:

4.5 V - Ensures protection against voltage spikes and circuit damage.

Minimum Power Gain (Gp):

15 dB - Enhances signal strength with minimal distortion.

Package Shape:

RECTANGULAR - Allows for efficient use of space in tight layouts.

Terminal Form:

GULL WING - Facilitates secure soldering and connection to the circuit board.

Operating Mode:

DEPLETION MODE - Offers precise control over signal amplification and power consumption.

Highest Frequency Band:

X BAND - Supports high-frequency signal processing for advanced applications.

No. of Terminals:

4 - Provides multiple connection points for versatile circuit configurations.

Package Style (Meter):

SMALL OUTLINE - Saves space and allows for high-density circuit designs.

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY - Ensures fast signal response and efficient power consumption.

Maximum Power Dissipation Ambient:

0.58 W - Handles high power levels without overheating or damage.

Maximum Operating Temperature:

160 °C - Can withstand high temperatures for reliable performance in harsh environments.

Transistor Element Material:

GALLIUM ARSENIDE - Provides high electron mobility for efficient signal amplification.

Terminal Finish:

MATTE TIN - Promotes reliable electrical connections and corrosion resistance.

Terminal Position:

DUAL - Allows for flexible installation and connection options in various circuit layouts.

Case Connection:

SOURCE - Ensures proper grounding and signal stability during operation.

Maximum Time At Peak Reflow Temperature (s):

20 - Supports efficient soldering process without damaging the transistor.

Peak Reflow Temperature °C:

260 - Enables secure and reliable solder joints for long-term use.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) ATF-38143-BLKG attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Broadcom

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

4.5 V

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

X BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

160 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.58 W

Minimum Power Gain (Gp):

15 dB

Qualification:

Not Qualified

Sub-Category:

FET RF Small Signals

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

20

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

ATF-38143-BLKG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

Broadcom

Broadcom Inc, a Delaware corporation headquartered in San Jose, CA, is a global technology leader that designs, develops and supplies a broad range of semiconductor and infrastructure software solutions. Broadcom’s category-leading product portfolio serves critical markets including data center, networking, software, broadband, wireless, storage and industrial. Our solutions include data center networking and storage, enterprise and mainframe software focused on automation, monitoring and security, smartphone components, telecoms and factory automation.

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