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BF556C-TAPE-13

NXP Semiconductors

BF556C-TAPE-13 by NXP Semiconductors

BF556C-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,884 parts In-Stock

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4,884

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Vyrian

USA . 2,973 parts In-Stock

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2,973

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Anansix

USA . 1,705 parts In-Stock

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1,705

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Distributors (Availability)

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One Stop Electronics

USA . 418 parts In-Stock

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$20.050

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418

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UNI Independent Distributors

Spain . 2,474 parts In-Stock

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2,474

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Northwest PG Solutions

USA . 1,525 parts In-Stock

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1,525

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Corphita

USA . 1,259 parts In-Stock

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1,259

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Native Components

USA . 772 parts In-Stock

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772

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Overview

Unlock unmatched performance with the BF556C-TAPE-13 from NXP Semiconductors, a leader in cutting-edge technology. This high-quality RF Small Signal FET excels in amplification applications, ensuring clarity and efficiency for your devices. Designed for versatility in compact spaces, its robust construction withstands demanding conditions, making it ideal for various electronic projects. Elevate your designs with reliable, top-tier components that deliver exceptional value and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability, making the product suitable for various environmental conditions without compromising performance.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically offer higher efficiency and faster switching speeds, making them ideal for modern electronic applications.

Configuration: SINGLE

A single configuration allows for simplified circuit design and integration, making it easier to use in a variety of applications.

Transistor Application: AMPLIFIER

Designed for amplification, this FET is perfect for applications requiring signal boost, improving audio and RF circuits.

Surface Mount: YES

Surface mount technology allows for compact designs and efficient automated assembly processes, ideal for modern PCB layouts.

Minimum DS Breakdown Voltage: 30 V

A minimum breakdown voltage of 30V provides robust performance in high-voltage applications, ensuring reliability under various conditions.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easy placement and integration on PCB, optimizing space utilization.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical stability and ease of soldering, enhancing the reliability of the connection.

Operating Mode: DEPLETION MODE

The depletion mode operation offers unique control over the device, making it suitable for specific applications requiring this type of functionality.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Designed for very high frequency applications, this FET is well-suited for RF and microwave circuits, ensuring optimal performance in fast signal processing.

No. of Terminals: 3

With only three terminals, this transistor allows for simplified connections and compact layout designs, reducing complexity in circuit boards.

Package Style (Meter): SMALL OUTLINE

A small outline package style promotes efficient use of space on PCBs, which is crucial in creating compact electronic devices.

Field Effect Transistor Technology: JUNCTION

Junction technology offers superior control over carrier concentration, leading to improved performance compared to other types of FETs.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures reliability and performance under demanding conditions, suitable for industrial applications.

Transistor Element Material: SILICON

Silicon is a well-established material in semiconductor technology, ensuring good performance in terms of switching speed and thermal stability.

Terminal Position: DUAL

Dual terminal positioning allows for flexible layout options, contributing to versatile design possibilities in circuit implementations.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF556C-TAPE-13 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF556C-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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