Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Form: WIRE; Maximum Feedback Capacitance (Crss): .8 pF; No. of Terminals: 4;
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RF Small Signal Field Effect Transistors (FET) 2N4416 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Motorola
Configuration:
Minimum DS Breakdown Voltage:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
Highest Frequency Band:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Element Material:
2N4416 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NSN
5961-00-222-1375, 5961002221375, 5961-00-469-9905, 5961004699905, 5961-01-040-7357, 5961010407357, 5961-00-481-6252, 5961004816252, 5961-00-501-1100, 5961005011100, 5961-00-107-2678, 5961001072678, 5961-00-137-4066, 5961001374066, 5961-00-117-3793, 5961001173793, 5961-01-048-5634, 5961010485634, 5961-01-011-4957, 5961010114957, 5961-99-118-3067, 5961991183067, 5961-99-599-0106, 5961995990106
NIIN
002221375, 004699905, 010407357, 004816252, 005011100, 001072678, 001374066, 001173793, 010485634, 010114957, 991183067, 995990106
Motorola Solutions, Inc., is an American video equipment, telecommunications equipment, software, systems and services provider that succeeded Motorola, Inc., following the spinoff of the mobile phone division into Motorola Mobility in 2011. The company is headquartered in Chicago, Illinois.
BAV99
Infineon Technologies
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Hitachi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
1N4148WT-7
Diodes Incorporated
1N4148WT-7 by Diodes Inc. is a fast recovery rectifier diode with a max reverse recovery time of 0.004 us and a max forward voltage of 1.25 V. It has a package style of small outline, making it suitable for surface mount applications where high-speed switching is required at temperatures ranging from -65 to 150 °C.
BSS138
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;
2N7002
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;
M24308/2-1F
Cinch Connectivity Solutions
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Body Depth: .375 inch;
SS14+
Multicomp Pro
SS14+ by Multicomp Pro is a Schottky rectifier diode with a max output current of 1A and a reverse test voltage of 40V. It is designed for surface mount applications in electronic circuits, offering a small outline package style and dual terminal position. With a temperature range from -65°C to 150°C, it is suitable for various industrial and consumer electronics.
SZNUP2105LT1G
Onsemi
SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.
Forward International Electronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Maximum Operating Temperature: 200 Cel; No. of Phases: 1;
M85049/85-08W02
Glenair
CONNECTOR ACCESSORY; MIL Conformity: YES; Material: ALUMINIUM ALLOY; Associated Backshell Military - Specifications: MIL-DTL-38999; Shell Sizes: 08; DIN Conformity: NO;
MMBT3904LT1G
MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.
Weitronic Enterprise
MBR0540T1G
MBR0540T1G by Onsemi is a Schottky rectifier diode with max. forward voltage of 0.62V and max. output current of 0.5A, ideal for applications requiring high efficiency power conversion in small outline packages. Operating temp range: -55 to 150°C, with peak reflow temp at 260°C, making it suitable for various electronic devices needing reliable rectification performance in compact designs.
1N4148WT
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358N
STMicroelectronics
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
SMBJ18CA
Zowie Technology
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Frontier Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
C1005X7R1E103K050BB
TDK
The TDK C1005X7R1E103K050BB is a ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 25V. It features X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications requiring compact size and stable performance in various electronic circuits.
Pulse Electronics
2N2222A
Crystalonics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
NE3210S01-T1B-A
Renesas Electronics
N-CHANNEL; Maximum Power Dissipation Ambient: .165 W; Maximum Operating Temperature: 125 Cel; Maximum Drain Current (ID): .07 A; Maximum Drain Current (Abs) (ID): .07 A;
BF998E6327
BF998E6327 by Infineon Technologies is an N-CHANNEL RF FET with 12V DS Breakdown Voltage. Operating in DEPLETION MODE, it has a 0.03A Drain Current and 0.2W Power Dissipation. Ideal for ULTRA HIGH FREQUENCY applications, this DUAL GATE transistor operates at up to 150°C temperature.
2N5484RL1
2N5484RL1 by Onsemi is an N-CHANNEL FET with 16 dB Gp, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring DEPLETION MODE operation, it has a max ID of 0.03 A and Crss of 1 pF, housed in a CYLINDRICAL package with THROUGH-HOLE terminals.
SMMBFJ310LT3G
SMMBFJ310LT3G by Onsemi is an N-CHANNEL RF FET with 0.225W power dissipation, ideal for high-frequency applications. With a max operating temp of 150°C and matte tin finish, it's suitable for surface mount designs. Its junction technology and peak reflow temp of 260°C make it reliable for various RF small signal circuits.
BF511T/R
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Position: DUAL; Transistor Element Material: SILICON;
BF245RLRP
BF245RLRP by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BLM7G1822S-20PBGY
Ampleon Netherlands B V
RF Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BF904AR
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Position: DUAL; No. of Elements: 2; Package Style (Meter): SMALL OUTLINE;
BF1207,115
NXP Semiconductors' BF1207,115 is a N-CHANNEL RF FET with 6V DS breakdown voltage and 21dB power gain. Ideal for amplifier applications in UHF band, it operates in dual gate enhancement mode with 0.03A max drain current and 0.18W power dissipation.
934055136115
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; No. of Terminals: 4; Maximum Feedback Capacitance (Crss): .035 pF; Package Body Material: PLASTIC/EPOXY;
2N3823UB
Microsemi
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Terminal Position: DUAL; JESD-30 Code: R-CDSO-N3;
BF545CTRL
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e3; Terminal Finish: TIN; Operating Mode: DEPLETION MODE;
J310
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Additional Features: LOW NOISE; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Operating Mode: DEPLETION MODE;
BF245B
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Finish: TIN LEAD; Package Style (Meter): CYLINDRICAL;
BF245
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Finish: TIN LEAD; No. of Elements: 1; Operating Mode: DEPLETION MODE;
3SK167
3SK167 by Onsemi is an N-CHANNEL RF FET with max drain current of 0.055A and power dissipation of 0.2W. Ideal for applications requiring high-frequency signal amplification in electronic devices operating up to 125 °C ambient temperature.
BF556AT/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Operating Mode: DEPLETION MODE; JEDEC-95 Code: TO-236AB;
FLU17XM
Fujitsu
FLU17XM by Fujitsu is an N-CHANNEL RF FET with 15V DS Breakdown Voltage. Operating in DEPLETION MODE, it supports L BAND frequencies and has a max power dissipation of 7.5W at 175°C. Ideal for microwave applications due to its CERAMIC, METAL-SEALED COFIRED package body material and SOURCE case connection.
2N5398
Texas Instruments
2N5398 by Texas Instruments is an N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND, it has a power dissipation of 0.3W and operates in DEPLETION MODE at up to 200°C.
2N4416
Rochester Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Terminal Form: WIRE; Terminal Position: BOTTOM;
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2N4416A
Intersil
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Body Material: METAL; Maximum Feedback Capacitance (Crss): .8 pF;
Inter F E T
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Operating Temperature: 150 Cel; JEDEC-95 Code: TO-72;
Motorola
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: DEPLETION MODE; JEDEC-95 Code: TO-206AF; Package Shape: ROUND;
Thomson-csf Semiconductors
N-CHANNEL; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; Package Style (Meter): CYLINDRICAL; Package Shape: ROUND; Terminal Position: BOTTOM;
Temic Semiconductors
RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: NO; Qualification: Not Qualified; Terminal Form: WIRE; Transistor Element Material: SILICON;
Micro Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Operating Mode: DEPLETION MODE; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Operating Temperature: 175 Cel; Operating Mode: DEPLETION MODE;
2N4416A by Texas Instruments is an N-CHANNEL FET with 35V DS Breakdown Voltage, 10dB Power Gain, and operates in DEPLETION MODE. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND due to its JUNCTION technology and 0.3W power dissipation capability at 200°C.
Central Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Qualification: Not Qualified; Package Shape: ROUND;
Solitron Devices
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-30 Code: O-MBCY-W4; No. of Terminals: 4;
Linear Integrated Systems
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Operating Mode: DEPLETION MODE; Additional Features: LOW NOISE;
National Semiconductor
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Qualification: Not Qualified; Terminal Finish: TIN LEAD; JESD-609 Code: e0;
Vishay Intertechnology
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Minimum Power Gain (Gp): 10 dB; Terminal Finish: TIN LEAD;
Asi Semiconductor
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Transistor Element Material: SILICON; JESD-30 Code: O-MBCY-W4; Terminal Form: WIRE;
Space Power Electronics
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Operating Temperature: 200 Cel; Package Shape: ROUND; Package Style (Meter): CYLINDRICAL;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; Maximum Feedback Capacitance (Crss): 1 pF;
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Elements: 1; Terminal Finish: TIN LEAD; Transistor Element Material: SILICON;
RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: NO; Package Body Material: METAL; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; JEDEC-95 Code: TO-72;
2N4416AG
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: DEPLETION MODE; No. of Elements: 1; Transistor Application: SWITCHING;
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