Loading...

2N5486RLRM

Onsemi

2N5486RLRM by Onsemi

2N5486RLRM by Onsemi is an N-CHANNEL RF FET with 10 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance up to 150 °C. With a max ID of 0.03 A and Crss of 1 pF, this JUNCTION FET is ideal for high-frequency amplification needs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,767 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,767

-

-

-

-

Digiode

USA . 534 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

534

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 208 parts In-Stock

1+ parts

$1.770

100+ parts

-

1k+ parts

-

10k+ parts

-

208

$1.770

-

-

-

Northwest PG Solutions

USA . 685 parts In-Stock

1+ parts

$1.947

100+ parts

-

1k+ parts

-

10k+ parts

-

685

$1.947

-

-

-

TANS Electronics

Latvia . 5,857 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,857

-

-

-

-

Kulean Microsystems

USA . 4,110 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,110

-

-

-

-

SupplyDigital Components

Austria . 2,277 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,277

-

-

-

-

Corphita

USA . 1,010 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,010

-

-

-

-

Corohmni

South Africa . 436 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

436

-

-

-

-

Problanco Electronics

Mexico . 240 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

240

-

-

-

-

UHIMA Technologies

Türkiye . 32 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

32

-

-

-

-

Overview

Looking for a reliable RF Small Signal Field Effect Transistor (FET) that delivers exceptional performance and quality? Look no further than the 2N5486RLRM by Onsemi. With its N-CHANNEL polarity, SINGLE configuration, and ULTRA HIGH FREQUENCY BAND operation, this transistor is perfect for amplifier applications. Onsemi's reputation for superior manufacturing ensures that you are getting a product that is built to last. Experience the value and benefits of the 2N5486RLRM with its high power gain, round package shape, and junction technology. Upgrade your electronics with this top-of-the-line transistor today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

The N-channel type allows for easy integration into amplifier circuits, providing efficient signal amplification.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimum performance in amplifying signals.

Minimum Power Gain (Gp): 10 dB

With a minimum power gain of 10 dB, this transistor offers high amplification capabilities, making it suitable for boosting weak signals.

Package Shape: ROUND

The round package shape is compact and easy to mount, saving space and allowing for versatile installation options.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide secure connections and easy soldering, ensuring reliable performance in circuit applications.

Operating Mode: DEPLETION MODE

Operating in depletion mode allows for easy control of the transistor's conductivity, making it suitable for various operational requirements.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra-high frequency band enables this transistor to handle high-frequency signals with precision and accuracy.

No. of Terminals: 3

Having 3 terminals allows for flexibility in circuit design and connection options, enhancing the usability of this transistor.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a sleek and compact design, ideal for space-constrained applications.

Field Effect Transistor Technology: JUNCTION

Utilizing junction technology provides high performance and reliability, ensuring consistent operation in various conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, ensuring stable performance in demanding environments.

Transistor Element Material: SILICON

Made of silicon, this transistor offers excellent conductivity and reliability, ensuring long-lasting performance in amplification applications.

Maximum Drain Current (ID): 0.03 A

Capable of handling a maximum drain current of 0.03 A, this transistor can support high current applications while maintaining efficiency.

Terminal Position: BOTTOM

The bottom terminal position allows for easy integration into circuit boards and ensures convenient connection options for various applications.

Maximum Feedback Capacitance (Crss): 1 pF

With a maximum feedback capacitance of 1 pF, this transistor minimizes signal loss and distortion, enhancing signal quality in amplification circuits.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5486RLRM attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Minimum Power Gain (Gp):

10 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5486RLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20