Loading...

2N5484RLRE

Onsemi

2N5484RLRE by Onsemi

Onsemi's 2N5484RLRE is an N-CHANNEL RF FET with 16 dB Gp, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a PLASTIC/EPOXY package, DEPLETION MODE operation, and SILICON transistor element. With 0.03 A ID and 1 pF Crss, this THROUGH-HOLE transistor offers high performance in a CYLINDRICAL package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,760 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,760

-

-

-

-

Digiode

USA . 2,170 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,170

-

-

-

-

Vyrian

USA . 40 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

40

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 4,541 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,541

-

-

-

-

SupplyDigital Components

Austria . 3,989 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,989

-

-

-

-

TANS Electronics

Latvia . 2,396 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,396

-

-

-

-

Corphita

USA . 1,989 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,989

-

-

-

-

Problanco Electronics

Mexico . 1,624 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,624

-

-

-

-

Native Components

USA . 993 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

993

-

-

-

-

Northwest PG Solutions

USA . 827 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

827

-

-

-

-

Corohmni

South Africa . 230 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

230

-

-

-

-

UHIMA Technologies

Türkiye . 173 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

173

-

-

-

-

Overview

Enhance your amplifier design with the high-quality 2N5484RLRE RF Small Signal Field Effect Transistor by Onsemi. This N-CHANNEL transistor offers a single configuration and operates in depletion mode, making it ideal for ultra-high frequency applications. With a minimum power gain of 16 dB, this transistor provides excellent signal amplification for top-notch performance. Upgrade your project with the reliability and precision that Onsemi is known for, and experience the enhanced value and benefits that the 2N5484RLRE brings to your circuitry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection to the internal components, making the transistor reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility, making them suitable for high-frequency applications such as amplifiers.

Configuration: SINGLE

The single configuration simplifies the design and integration of the transistor into electronic circuits.

Minimum Power Gain (Gp): 16 dB

With a minimum power gain of 16 dB, this transistor can amplify weak signals effectively.

Package Shape: ROUND

The round package shape allows for efficient heat dissipation, ensuring optimal performance under high-frequency operation.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure connections and easy soldering, enhancing the reliability of the transistor in electronic circuits.

Operating Mode: DEPLETION MODE

Depletion mode operation provides better control over the transistor's channel conductivity, allowing for precise signal amplification.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra-high frequency applications, this transistor delivers high performance in demanding RF circuits.

No. of Terminals: 3

Having 3 terminals simplifies the connection and integration of the transistor in electronic circuits.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compact and space-saving, ideal for applications where board space is limited.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers low noise and high gain characteristics, making this transistor suitable for amplifier applications.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability, high frequency capabilities, and low noise performance.

Maximum Drain Current (ID): 0.03 A

With a maximum drain current of 0.03 A, this transistor can handle moderate power levels in RF circuits.

Terminal Position: BOTTOM

Bottom terminal position simplifies mounting and connection of the transistor on circuit boards.

Maximum Feedback Capacitance (Crss): 1 pF

The low feedback capacitance of 1 pF minimizes signal distortion and ensures stable RF amplification.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5484RLRE attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Minimum Power Gain (Gp):

16 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5484RLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20