Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Onsemi's 2N5484RLRE is an N-CHANNEL RF FET with 16 dB Gp, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a PLASTIC/EPOXY package, DEPLETION MODE operation, and SILICON transistor element. With 0.03 A ID and 1 pF Crss, this THROUGH-HOLE transistor offers high performance in a CYLINDRICAL package.
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UHIMA Technologies
The plastic/epoxy material used for the package body provides durability and protection to the internal components, making the transistor reliable for long-term use.
N-channel transistors typically have higher electron mobility, making them suitable for high-frequency applications such as amplifiers.
The single configuration simplifies the design and integration of the transistor into electronic circuits.
With a minimum power gain of 16 dB, this transistor can amplify weak signals effectively.
The round package shape allows for efficient heat dissipation, ensuring optimal performance under high-frequency operation.
Through-hole terminals offer secure connections and easy soldering, enhancing the reliability of the transistor in electronic circuits.
Depletion mode operation provides better control over the transistor's channel conductivity, allowing for precise signal amplification.
Designed for ultra-high frequency applications, this transistor delivers high performance in demanding RF circuits.
Having 3 terminals simplifies the connection and integration of the transistor in electronic circuits.
The cylindrical package style is compact and space-saving, ideal for applications where board space is limited.
Junction FET technology offers low noise and high gain characteristics, making this transistor suitable for amplifier applications.
Silicon transistors are known for their reliability, high frequency capabilities, and low noise performance.
With a maximum drain current of 0.03 A, this transistor can handle moderate power levels in RF circuits.
Bottom terminal position simplifies mounting and connection of the transistor on circuit boards.
The low feedback capacitance of 1 pF minimizes signal distortion and ensures stable RF amplification.
RF Small Signal Field Effect Transistors (FET) 2N5484RLRE attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi
Configuration:
Maximum Drain Current (ID):
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
Highest Frequency Band:
JEDEC-95 Code:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Minimum Power Gain (Gp):
Qualification:
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Transistor Element Material:
2N5484RLRE Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
M24308/2-1F
Souriau-sunbank Connection Technologies
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Body Length: 1.228 inch; Mounting Type: CABLE AND PANEL; Termination Type: CRIMP;
BAT54C-7-F
Diodes Incorporated
BAT54C-7-F by Diodes Inc. is a Schottky rectifier diode with common cathode, 2 elements, and max forward voltage of 0.24V. Ideal for applications requiring fast reverse recovery time of 0.005 us, such as in small outline packages for surface mount technology at temperatures ranging from -65 to 150°C.
1N4148
Grande Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N7002
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
DS18B20+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Package Shape or Style: RECTANGULAR; Maximum Operating Current: 1.5 mA; Package Equivalence Code: SIP3,.1,50;
Crimson Semiconductor
CSNF651
Honeywell Sensing And Control
CSNF651 by Honeywell Sensing And Control is an industrial-grade analog circuit with 3 terminals. It operates b/w -40 to 85°C, supporting supply voltages from -15V to 15V. Ideal for applications requiring a special shape rectangular package style and through-hole terminal form.
08055C104KAT4A
KYOCERA AVX
08055C104KAT4A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance, rated for 50V. With X7R temperature characteristics and -55 to 125 °C operating range, it's ideal for SMT applications requiring compact size and high reliability. The wraparound terminals and multi-layer design make it suitable for various electronic circuits.
BAV99
Nexperia
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Onsemi
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
RC0603FR-071KL
Yageo
Yageo's RC0603FR-071KL is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in electronics, it operates b/w -55 to 155 °C with a temperature coefficient of 100 ppm/°C.
LL4148
Rectron
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
OPA2227UA
Texas Instruments
OPA2227UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 200 uV and bias current of 0.01 uA. It operates at temperatures ranging from -40 to 85 °C, making it suitable for industrial applications requiring precise signal amplification. With a unity gain bandwidth of 8000 kHz, this op amp is ideal for high-frequency circuit designs.
National Semiconductor
MC33269T-3.3G
MC33269T-3.3G by Onsemi is a fixed positive single output LDO regulator with a max output current of 0.8 A and a dropout voltage of 1.35 V. It is commonly used in applications that require stable voltage regulation, such as power supplies for electronic devices.
MBR0520L-T1
Won-top Electronics
MBR0520L-T1 by Won-top Electronics is a Schottky rectifier diode with 20V peak reverse voltage and 0.5A output current. It is a single-config, surface-mount diode in a small outline package, suitable for applications requiring high-speed switching and low forward voltage drop. Operating temperature range from -65°C to 125°C makes it ideal for various electronic circuits.
Sun Wai Electronic
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Recovery Time: .004 us; Maximum Repetitive Peak Reverse Voltage: 100 V;
LL4148-GS08
Telefunken Microelectronics
RECTIFIER DIODE; Surface Mount: YES; JESD-609 Code: e0; No. of Elements: 1; Maximum Operating Temperature: 175 Cel; Maximum Non Repetitive Peak Forward Current: 2 A;
BSS138NH6327XTSA2
Infineon Technologies
BSS138NH6327XTSA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 0.36W Power Dissipation and 3.5 ohm Drain-Source Resistance. With Gull Wing terminals and AEC-Q101 reference standard, it's suitable for automotive electronics due to its high temperature range of -55 to 150 °C.
Leshan Radio
RECTIFIER DIODE; Surface Mount: YES; Maximum Non Repetitive Peak Forward Current: 2 A; Maximum Reverse Recovery Time: .004 us; No. of Phases: 1; Maximum Operating Temperature: 175 Cel;
SMMBFJ310LT3
SMMBFJ310LT3 by Onsemi is an N-CHANNEL RF FET for AMPLIFIER applications. It operates in DEPLETION MODE with a 25V DS Breakdown Voltage and 2.5pF Crss, suitable for ULTRA HIGH FREQUENCY BAND usage. This SMALL OUTLINE transistor has GULL WING terminals and Tin/Lead finish, making it ideal for surface mount configurations.
BF998WR
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e3; Additional Features: LOW NOISE;
934059875115
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Minimum DS Breakdown Voltage: 6 V; No. of Elements: 2; JESD-30 Code: R-PDSO-F6;
934063996115
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Position: DUAL; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
934055957215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Package Shape: RECTANGULAR; JESD-609 Code: e3;
BLF184XRS
Ampleon Netherlands B V
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum Power Gain (Gp): 22.8 dB; Case Connection: SOURCE; Terminal Position: DUAL;
BF244
Motorola
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Package Shape: ROUND; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
2N4223
2N4223 by Texas Instruments is an N-CHANNEL RF FET with 30V DS Breakdown Voltage, 10 dB Power Gain, and 0.02A Drain Current. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND due to DEPLETION MODE operation. Package: METAL, Shape: ROUND, Technology: JUNCTION.
BF545B
The NXP Semiconductors BF545B is an N-CHANNEL RF FET for switching applications. Operating in DEPLETION MODE, it offers a 30V DS Breakdown Voltage and operates in the VERY HIGH FREQUENCY BAND. With a max power dissipation of 0.25W, this transistor is ideal for small outline packages in high-frequency circuits.
BF909WR,115
BF909WR,115 by NXP Semiconductors is an N-CHANNEL RF Small Signal FET with a PLASTIC/EPOXY package. It operates in DUAL GATE, ENHANCEMENT MODE for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a max Drain Current of 0.04 A and a Breakdown Voltage of 7 V, it is ideal for high-frequency circuit designs.
BF991-TAPE-13
BF991-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a dual gate, depletion mode operation with a max drain current of 20 mA and a breakdown voltage of 20 V. This surface-mount transistor operates in the very high frequency band, ideal for compact designs.
BF904WR,115
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Maximum Feedback Capacitance (Crss): .035 pF; Terminal Finish: TIN;
BF2030
Siemens
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY; Case Connection: SOURCE;
BLF184XR
BLF184XR by NXP Semiconductors is an N-CHANNEL RF FET with 135V DS Breakdown Voltage, 22.8 dB Power Gain, and operates in the ULTRA HIGH FREQUENCY BAND. It is commonly used as an AMPLIFIER in applications requiring a COMMON SOURCE configuration. The transistor comes in a CERAMIC, METAL-SEALED COFIRED package with FLANGE MOUNT style for surface mounting.
BF545AT/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Terminal Finish: TIN; Field Effect Transistor Technology: JUNCTION;
FHX35X
Fujitsu
Fujitsu's FHX35X is an N-CHANNEL RF FET for AMPLIFIER applications in KU BAND. With 8.5 dB Power Gain, it operates in DEPLETION MODE at 175 °C max temp. Featuring HIGH ELECTRON MOBILITY tech and GALLIUM ARSENIDE material, this SINGLE configuration transistor is a surface mount with 4 terminals.
BLC8G27LS-160AV
RF Small Signal Field-Effect Transistors;
BF998,215
BF998,215 by NXP Semiconductors is an N-CHANNEL RF FET with a 12V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQ BAND and has a 0.03A Drain Current. Ideal for AMPLIFIER applications, this transistor features DUAL GATE DEPLETION MODE and a max power dissipation of 0.2W.
BF992R-TAPE-7
BF992R-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a dual gate, depletion mode operation with a max DS breakdown voltage of 20V and operates in the very high frequency band. This surface-mount transistor ensures efficient performance with a compact design.
J310
Temic Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND;
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2N5457
Micro Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Package Style (Meter): CYLINDRICAL;
2N5486G
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; JESD-30 Code: O-PBCY-T3; No. of Terminals: 3;
Rochester Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-92; Package Shape: ROUND; Terminal Form: THROUGH-HOLE;
2N5486
Central Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation Ambient: .31 W; JEDEC-95 Code: TO-92; Minimum Operating Temperature: -65 Cel;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-92; Operating Mode: DEPLETION MODE; Package Style (Meter): CYLINDRICAL;
Calogic
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Package Shape: ROUND; Package Style (Meter): CYLINDRICAL;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Field Effect Transistor Technology: JUNCTION; Terminal Form: THROUGH-HOLE;
Allegro MicroSystems
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; JEDEC-95 Code: TO-226AA; Maximum Operating Temperature: 150 Cel;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Qualification: Not Qualified; Transistor Element Material: SILICON; Terminal Form: THROUGH-HOLE;
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Additional Features: LOW NOISE; Terminal Finish: TIN LEAD; Field Effect Transistor Technology: JUNCTION;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM;
Solitron Devices
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Operating Mode: DEPLETION MODE; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Minimum Power Gain (Gp): 10 dB; No. of Terminals: 3;
Inter F E T
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Terminal Position: BOTTOM; JEDEC-95 Code: TO-226AA;
2N5486PBFREE
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Maximum Drain Current (ID): .03 A; Field Effect Transistor Technology: JUNCTION;
2N5484RLRM
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Position: BOTTOM; Maximum Feedback Capacitance (Crss): 1 pF; Operating Mode: DEPLETION MODE;
2N5484RL
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM;
2N5484RL1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Form: WIRE; Package Style (Meter): CYLINDRICAL; Additional Features: EUROPEAN PART NUMBER;
Supply Digital Components
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