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2N5486G

Onsemi

2N5486G by Onsemi

The Onsemi 2N5486G is an N-CHANNEL RF FET with a single configuration for amplifier applications. It offers a min power gain of 10 dB and operates in depletion mode at ultra-high frequencies. With a max power dissipation of 0.31 W, it features a cylindrical package shape and junction FET technology.

Median Price

$0.110

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 550 parts In-Stock

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$0.110

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VNN

France . 30,620 parts In-Stock

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Vyrian

USA . 219 parts In-Stock

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Digiode

USA . 144 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 475 parts In-Stock

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$0.108

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475

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Continental Prestige Electronics

USA . 4,053 parts In-Stock

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$0.110

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Argo Parts USA

USA . 2,691 parts In-Stock

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$0.110

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$0.107

2,691

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$0.107

Netroflash

USA . 2,000 parts In-Stock

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$0.110

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$0.104

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$0.102

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$0.110

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$0.104

$0.102

AZTECH Wire

Italy . 259 parts In-Stock

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$14.608

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259

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Ampacity Inc.

Singapore . 337 parts In-Stock

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$54.050

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337

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Component Stockers USA

USA . 240 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 2,879 parts In-Stock

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Corphita

USA . 2,474 parts In-Stock

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TANS Electronics

Latvia . 2,203 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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SupplyDigital Components

Austria . 514 parts In-Stock

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Problanco Electronics

Mexico . 307 parts In-Stock

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UHIMA Technologies

Türkiye . 37 parts In-Stock

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Overview

Discover the power of the 2N5486G by Onsemi, a top-quality RF Small Signal Field Effect Transistor. Manufactured by Onsemi, this N-CHANNEL transistor offers exceptional performance in amplifier applications within the ultra-high frequency band. With a single configuration and a package style that ensures easy installation, this transistor delivers a minimum power gain of 10 dB to enhance signal amplification. Trust in Onsemi's reputation for excellence and unlock the potential of your electronic projects with the 2N5486G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

Allows for efficient signal amplification in N-channel applications.

Minimum Power Gain (Gp): 10 dB

Ensures a minimum level of power gain for effective amplification of signals.

Package Shape: ROUND

Facilitates easy installation and fitting in various circuit designs.

Operating Mode: DEPLETION MODE

Enhances signal amplification capabilities in depletion mode applications.

Maximum Power Dissipation (Abs): 0.31 W

Can handle high power levels without overheating or damage.

Field Effect Transistor Technology: JUNCTION

Provides efficient performance and high frequency operation.

Maximum Operating Temperature: 150 °C

Can operate effectively in high temperature environments.

Maximum Drain Current (ID): 0.03 A

Supports high current flow for robust signal amplification.

Maximum Feedback Capacitance (Crss): 1 pF

Helps in reducing signal distortion and maintaining signal integrity.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5486G attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

10 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5486G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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