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2N5951

Texas Instruments

2N5951 by Texas Instruments

2N5951 by Texas Instruments is an N-CHANNEL RF FET with a max power dissipation of 0.36W and max operating temp of 150°C. Ideal for switching applications, it features a single configuration in a cylindrical package with wire terminals.

Median Price

$0.850

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 406 parts In-Stock

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$0.850

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Component Electronics Inc.

Canada . 52 parts In-Stock

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$0.150

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$0.120

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$0.100

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52

$0.150

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Digiode

USA . 7,034 parts In-Stock

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ES Components

USA . 2,500 parts In-Stock

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Vyrian

USA . 1,958 parts In-Stock

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Anansix

USA . 1,852 parts In-Stock

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1,852

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Jameco Electronics

USA . 711 parts In-Stock

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First Choice Components Inc.

USA . 53 parts In-Stock

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Prism Electronics

USA . 6 parts In-Stock

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Electronics Depot

USA . 3 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 1,147 parts In-Stock

1+ parts

$0.113

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$0.108

1,147

$0.113

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$0.108

Northwest PG Solutions

USA . 3,478 parts In-Stock

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$0.124

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$0.110

3,478

$0.124

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$0.110

Corohmni

South Africa . 336 parts In-Stock

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$0.150

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Parana Technologies

USA . 2,317 parts In-Stock

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$1.119

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$1.948

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2,317

$1.119

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$1.948

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DigiPath Technology Company

USA . 439 parts In-Stock

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$1.232

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$1.133

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439

$1.232

$1.133

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ChromeModa Solutions

Germany . 4,216 parts In-Stock

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$1.257

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$1.031

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$1.257

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IDEA Electronic Components Group

UK . 2,129 parts In-Stock

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$1.257

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$1.131

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$1.257

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$1.131

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AZTECH Wire

Italy . 397 parts In-Stock

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$8.885

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397

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One Stop Electronics

USA . 440 parts In-Stock

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$20.050

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440

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QUARKTWIN TECHNOLOGY LTD

USA . 7,601 parts In-Stock

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SupplyDigital Components

Austria . 6,092 parts In-Stock

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TANS Electronics

Latvia . 5,414 parts In-Stock

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Corphita

USA . 5,194 parts In-Stock

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Kulean Microsystems

USA . 4,382 parts In-Stock

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Supply Digital

USA . 2,366 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Problanco Electronics

Mexico . 1,103 parts In-Stock

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UHIMA Technologies

Türkiye . 179 parts In-Stock

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Perfect Parts

USA . 119 parts In-Stock

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Overview

Upgrade your electronics with the 2N5951 by Texas Instruments, a high-quality RF Small Signal Field Effect Transistor designed for switching applications. Manufactured with precision and expertise, this N-CHANNEL transistor offers unmatched performance and reliability. With its durable plastic/epoxy body and efficient design, it provides exceptional value and benefits to customers looking for top-notch components. Whether you're building communication systems or industrial equipment, the 2N5951 is the perfect choice for your projects. Elevate your creations with Texas Instruments' innovative technology and elevate your success today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic packaging enhances durability and heat resistance, making the transistor suitable for various environments.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have faster switching speeds and lower ON-resistance compared to P-channel transistors, improving efficiency.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces potential points of failure.

Transistor Application: SWITCHING

Designed for switching applications, ensuring reliable performance in controlling electrical signals.

Package Shape: ROUND

Round package shape allows for easy installation and space-saving in compact electronic devices.

Terminal Form: WIRE

Wire terminal form offers flexibility in connection methods and ease of soldering.

Maximum Power Dissipation (Abs): 0.36 W

High power dissipation capacity enables the transistor to handle moderate power levels without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers a uniform and compact design for efficient integration into electronic circuits.

Field Effect Transistor Technology: JUNCTION

Junction technology provides improved performance in high-frequency applications and lower noise characteristics.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable operation even in elevated temperature environments.

Transistor Element Material: SILICON

Silicon material offers stability, low leakage, and high conductivity, essential for consistent transistor performance.

Terminal Position: BOTTOM

Bottom terminal position simplifies circuit layout and facilitates efficient heat dissipation.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5951 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Additional Features:

LOW NOISE

Configuration:

Field Effect Transistor Technology:

JUNCTION

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N5951 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-122-2552, 5961011222552

NIIN

011222552

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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