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2N5952/D74Z

National Semiconductor

2N5952/D74Z by National Semiconductor

2N5952/D74Z by National Semiconductor is a N-CHANNEL RF FET with DEPLETION MODE operation. It has 3 terminals, SILICON element, and 2 pF feedback capacitance. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND due to its JUNCTION technology and THROUGH-HOLE package style.

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Overview

Elevate your amplifier projects with the 2N5952/D74Z by National Semiconductor. As a leading manufacturer of RF Small Signal Field Effect Transistors, National Semiconductor delivers top-notch quality and performance for various applications. This N-CHANNEL transistor offers exceptional value with its very high frequency band capability and depletion mode operation. Whether you're working on radio communication systems or radar technology, this transistor's superior design and reliability will take your projects to the next level. Upgrade your amplifiers today with the 2N5952/D74Z and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the transistor lightweight and durable, ensuring long-term reliability.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better conductivity and lower resistance, making them suitable for high-frequency applications.

Configuration: SINGLE

Single configuration transistors are simpler to use and integrate into circuits, making them ideal for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides enhanced signal amplification capabilities.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into circuit designs, optimizing space utilization.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, ensuring stable performance in amplifier circuits.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for better control over the transistor's conductivity, improving performance in amplifier applications.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Designed for very high frequency bands, this transistor is capable of processing high-speed signals with minimal loss of quality.

No. of Terminals: 3

Having 3 terminals allows for easy integration into amplifier circuits, providing versatile connectivity options.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact design, making it suitable for space-constrained amplifier circuit layouts.

Field Effect Transistor Technology: JUNCTION

Junction technology ensures reliable and efficient signal processing in amplifier applications, enhancing overall performance.

Transistor Element Material: SILICON

Silicon transistors offer superior conductivity and thermal stability, making them a reliable choice for amplifier circuits.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and secure connections, ensuring stable performance in amplifier applications.

Maximum Feedback Capacitance (Crss): 2 pF

Having a low feedback capacitance of 2 pF helps minimize signal loss and distortion, making this transistor ideal for high-fidelity amplifier circuits.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5952/D74Z attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from National Semiconductor

Specs

Configuration:

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5952/D74Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

National Semiconductor

National Semiconductor was an American semiconductor manufacturer which specialized in analog devices and subsystems, formerly with headquarters in Santa Clara, California. The company produced power management integrated circuits, display drivers, audio and operational amplifiers, communication interface products and data conversion solutions. National's key markets included wireless handsets, displays and a variety of broad electronics markets, including medical, automotive, industrial and test and measurement applications.On September 23, 2011, the company formally became part of Texas Instruments as the "Silicon Valley" division.

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