Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; No. of Terminals: 4; JESD-30 Code: R-PDSO-G4; Operating Mode: DUAL GATE, ENHANCEMENT MODE;
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RF Small Signal Field Effect Transistors (FET) 934057513115 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors
Additional Features:
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Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
Highest Frequency Band:
JESD-30 Code:
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Operating Mode:
Package Body Material:
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Transistor Element Material:
934057513115 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
2N7002
Vishay Intertechnology
2N7002 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE, suitable for surface mount with GULL WING terminals.
BAV99
Toshiba
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BSS138NH6327XTSA2
Infineon Technologies
BSS138NH6327XTSA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 0.36W Power Dissipation and 3.5 ohm Drain-Source Resistance. With Gull Wing terminals and AEC-Q101 reference standard, it's suitable for automotive electronics due to its high temperature range of -55 to 150 °C.
Diotec Semiconductor Ag
Microchip Technology
BSS138
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
Leshan Radio
RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Forward Voltage (VF): .5 V;
BSS138K-13
Diodes Incorporated
BSS138K-13 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, operating in enhancement mode. With 3 terminals and 0.31A max drain current, it offers high performance in small outline package style.
LM2675M-ADJ/NOPB
Texas Instruments
LM2675M-ADJ/NOPB by Texas Instruments is a voltage-mode switching regulator with 1A output current, 37V max output voltage, and 260kHz max switching frequency. Ideal for automotive applications due to its -40°C to 125°C operating temperature range and compact small outline package design.
Calogic
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Drain Current (Abs) (ID): .2 A;
BSS138BKW,115
NXP Semiconductors
NXP Semiconductors' BSS138BKW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for SWITCHING applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it meets AEC-Q101 standards.
EPCS4SI8N
Intel
EPCS4SI8N by Intel is a small outline flash memory with 512Kx8 organization, operating at 3.3V. It features a max clock frequency of 40MHz and endurance of 100k write/erase cycles. Ideal for industrial applications requiring configuration memory with serial interface and low standby current consumption.
1N4148WT
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358N
Harris Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
SSL-LXA228SRC-TR11
Lumex
SSL-LXA228SRC-TR11 by Lumex is a 1.9mm SINGLE COLOR LED with peak wavelength of 660nm and max forward current of 0.03A. Ideal for applications requiring SUPER RED light emission, such as indicator lights in electronic devices due to its clear lens and surface mounting feature.
SMBJ18CA
Dc Components
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
RC0402JR-070RL
Yageo
Yageo's RC0402JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. It features METAL GLAZE/THICK FILM tech, WRAPAROUND terminals, and 0.0625 W power dissipation. Ideal for jumper applications in electronics requiring compact surface mount components.
LAN8720A-CP-TR
Standard Microsystems
ETHERNET TRANSCEIVER; Temperature Grade: OTHER; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;
CLF1G0035S-100PU
The NXP Semiconductors CLF1G0035S-100PU is an RF FET with 150V DS breakdown voltage, operating in depletion mode. It features N-channel polarity, common source configuration, and gallium nitride element material. Ideal for S band applications like amplifiers due to its high electron mobility technology.
2N5486
Micro Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;
2N4220A
2N4220A by Texas Instruments is an N-CHANNEL FET with a max power dissipation of 0.3W, ideal for switching applications. Featuring a cylindrical package style and junction technology, it operates at up to 200°C temperature. The transistor has 4 terminals in a round metal package body for isolated case connection.
BF545B
The NXP Semiconductors BF545B is an N-CHANNEL RF FET for switching applications. Operating in DEPLETION MODE, it offers a 30V DS Breakdown Voltage and operates in the VERY HIGH FREQUENCY BAND. With a max power dissipation of 0.25W, this transistor is ideal for small outline packages in high-frequency circuits.
BF994SA-GS08
Vishay Telefunken
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): .035 pF; Minimum DS Breakdown Voltage: 20 V; Terminal Form: GULL WING;
BF245BAMO
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Operating Mode: DEPLETION MODE; Terminal Form: THROUGH-HOLE;
BF256AZL1
Onsemi
BF256AZL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance. Ideal for applications requiring JUNCTION technology in a CYLINDRICAL package with THROUGH-HOLE terminals.
BF909WR-T
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Position: DUAL; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
ATF-38143-BLKG
Agilent Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 160 Cel; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDSO-G4;
BF2030E6327
BF2030E6327 by Infineon Technologies is an N-CHANNEL RF FET with 10V DS Breakdown Voltage, 20dB Power Gain, and 0.2W Power Dissipation. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND due to DUAL GATE, DEPLETION MODE operation. Package: PLASTIC/EPOXY, Surface Mountable with GULL WING terminals.
BF244ARLRP
BF244ARLRP by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
NE3210S01
Nec Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Minimum DS Breakdown Voltage: 3 V; Terminal Position: RADIAL;
BLF202,115
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 5.7 W; No. of Terminals: 8; Terminal Form: GULL WING;
BF513TRL
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e3; Terminal Form: GULL WING; Transistor Element Material: SILICON;
ATF-36077-TR1
Broadcom
Broadcom ATF-36077-TR1 is an N-channel FET with 3V DS breakdown voltage and 11dB power gain, ideal for amplifier applications in KU band. It features a ceramic-metal sealed co-fired package, flat terminals, and gold finish, operating in depletion mode with high electron mobility technology.
2N4416A
Motorola
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: DEPLETION MODE; JEDEC-95 Code: TO-206AF; Package Shape: ROUND;
J309RLRA
J309RLRA by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a DEPLETION MODE and SILICON element material, it operates at up to 125 °C with a max Crss of 2.5 pF.
ATF-58143-TR2G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
BLF202
BLF202 by NXP Semiconductors is an N-CHANNEL RF FET with a 40V DS Breakdown Voltage and 10 dB Power Gain, ideal for AMPLIFIER applications. It operates in ENHANCEMENT MODE at VERY HIGH FREQUENCY BAND, with a max Drain Current of 1A and Power Dissipation of 5.7W in a SMALL OUTLINE package.
BF510TRL13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; Field Effect Transistor Technology: JUNCTION; Terminal Finish: TIN;
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934028850215
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; No. of Terminals: 4; Transistor Application: AMPLIFIER; Case Connection: SOURCE;
934020440235
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 7 V; Terminal Finish: TIN; Package Body Material: PLASTIC/EPOXY;
934008980215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Terminal Form: GULL WING; Package Shape: RECTANGULAR;
934022610215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 12 V; No. of Terminals: 4; Transistor Element Material: SILICON;
934021470235
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Qualification: Not Qualified; JESD-30 Code: R-PDSO-G3;
934020430235
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 7 V; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
934028850235
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; No. of Terminals: 4; Transistor Element Material: SILICON;
934002640235
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Transistor Application: AMPLIFIER; Transistor Element Material: SILICON;
934021470215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Operating Mode: DEPLETION MODE; Transistor Application: SWITCHING;
934008990215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Package Shape: RECTANGULAR; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
934022600215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: LOW NOISE; Operating Mode: DUAL GATE, DEPLETION MODE; Minimum DS Breakdown Voltage: 12 V;
934021480215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; JESD-609 Code: e3; Qualification: Not Qualified;
934020430215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3;
934022610235
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: SOURCE; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 4;
934002660235
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; No. of Elements: 2; JESD-30 Code: R-PDSO-G4;
934020440215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 4; Terminal Position: DUAL;
934002640215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DUAL GATE, DEPLETION MODE; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; JESD-30 Code: R-PDSO-G4;
934002660215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Terminal Form: GULL WING; Additional Features: LOW NOISE;
934009000215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-236AB;
934021490215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: VERY HIGH FREQUENCY BAND; JEDEC-95 Code: TO-236AB; Transistor Application: SWITCHING;
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