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BF904R-TAPE-7

NXP Semiconductors

BF904R-TAPE-7 by NXP Semiconductors

BF904R-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 7V, operates in the ultra-high frequency band, and supports dual gate enhancement mode. Ideal for compact surface mount designs, it ensures reliable performance up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,942 parts In-Stock

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Digiode

USA . 1,431 parts In-Stock

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Anansix

USA . 878 parts In-Stock

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Native Components

USA . 573 parts In-Stock

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$0.201

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$0.193

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Northwest PG Solutions

USA . 2,156 parts In-Stock

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$0.221

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$0.195

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One Stop Electronics

USA . 1,160 parts In-Stock

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$52.050

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$52.050

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UNI Independent Distributors

Spain . 5,210 parts In-Stock

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Corphita

USA . 4,952 parts In-Stock

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Overview

Elevate your designs with the BF904R-TAPE-7 from NXP Semiconductors. Renowned for quality and innovation, NXP delivers unmatched reliability in RF small signal transistors, making this N-channel FET an ideal choice for amplifying applications. Its compact surface-mount design ensures seamless integration into your projects, while its ability to operate at ultra-high frequencies provides superior performance. Experience enhanced functionality and efficiency that only NXP can offer!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures lightweight and durable construction, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally offer better performance for amplification and switching applications, making them a preferred choice in RF design.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode provides protection against reverse polarity, enhancing reliability in circuit designs.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this FET ensures high gain and efficiency in RF applications.

Surface Mount: YES

Surface mount compatibility allows for easy integration into compact, high-density circuit layouts, optimizing space and performance.

Minimum DS Breakdown Voltage: 7 V

A breakdown voltage of 7 V makes this FET suitable for applications that require modest voltage levels, ensuring safe operation.

Package Shape: RECTANGULAR

The rectangular package shape facilitates efficient heat dissipation and improves the overall thermal performance of the device.

Terminal Form: GULL WING

Gull wing terminals provide better mechanical stability and are easier for automated soldering processes, ensuring reliable connections.

Operating Mode: DUAL GATE, ENHANCEMENT MODE

The dual gate feature allows for improved gain control and linearity, making it ideal for RF amplification and signal processing.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the UHF band makes this device suitable for high-frequency applications such as RF communication and signal processing.

No. of Terminals: 4

With 4 terminals, the design allows for flexibility in circuit configurations and a variety of connectivity options.

Package Style (Meter): SMALL OUTLINE

The small outline package saves board space and is ideal for compact electronic designs, which are crucial in modern applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides higher efficiency and lower power consumption compared to other transistor technologies, enhancing performance.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows for use in demanding environments without compromising performance or reliability.

Transistor Element Material: SILICON

Silicon material offers excellent electrical properties, making it the standard choice for most FET applications.

Maximum Drain Current (ID): 0.03 A

The ability to handle a maximum drain current of 0.03 A is sufficient for many RF applications, ensuring robust performance.

Terminal Position: DUAL

The dual terminal position allows for straightforward integration into circuit designs, enhancing overall design flexibility.

Case Connection: SOURCE

Having the source as the case connection simplifies the circuit design and can improve thermal management.

Maximum Feedback Capacitance (Crss): 0.035 pF

Low feedback capacitance reduces signal loss and distortion, which is crucial for maintaining the integrity of high-frequency signals.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF904R-TAPE-7 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

7 V

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.035 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF904R-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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