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PD57002-E

STMicroelectronics

PD57002-E by STMicroelectronics

PD57002-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, max drain current of 0.25A, and operates in the ultra-high frequency band. Ideal for compact surface mount designs, it ensures efficient performance up to 165 °C.

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6

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1k+

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Vyrian

USA . 4,227 parts In-Stock

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Anansix

USA . 1,779 parts In-Stock

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Digiode

USA . 1,126 parts In-Stock

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North Shore Components

USA . 46 parts In-Stock

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Cogito LLC

Ukraine . 14 parts In-Stock

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Semi Source

USA . 8 parts In-Stock

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IDEA Electronic Components Group

UK . 2,205 parts In-Stock

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$0.503

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$0.453

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MKK Technologies

India . 264 parts In-Stock

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$0.946

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DigiPath Technology Company

USA . 264 parts In-Stock

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$0.946

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264

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AZTECH Wire

Italy . 508 parts In-Stock

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$15.680

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QUARKTWIN TECHNOLOGY LTD

USA . 25,936 parts In-Stock

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Corphita

USA . 3,753 parts In-Stock

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Kepictronics

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Assy Fe

Spain . 1,000 parts In-Stock

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Perfect Parts

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Parana Technologies

USA . 327 parts In-Stock

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$0.602

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Overview

Unlock exceptional performance with the PD57002-E from STMicroelectronics, a leader in innovative semiconductor solutions. This N-Channel RF FET is designed to elevate your amplifier applications with its impressive power gain and robust reliability. Its compact surface mount design ensures seamless integration into your projects, making it ideal for ultra-high frequency operations. Experience unmatched quality and efficiency, empowering your designs with enhanced signal processing capabilities and long-lasting performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and reliability, making the transistor suitable for various electronic applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are generally more efficient and offer higher electron mobility, leading to better performance in switching and amplification applications.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces complexity, making it easier to integrate into various circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor is ideal for applications requiring signal enhancement.

Surface Mount: YES

Surface mount capability allows for compact designs, enabling higher density circuit layouts and improved performance.

Minimum DS Breakdown Voltage: 65 V

A higher breakdown voltage ensures reliability in high-voltage applications, reducing the risk of device failure.

Minimum Power Gain (Gp): 15 dB

A minimum power gain of 15 dB makes this transistor suitable for applications requiring significant signal amplification.

Package Shape: RECTANGULAR

The rectangular package shape aids in efficient layout and thermal management within electronic devices.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and improve connection integrity, enhancing the overall reliability.

Operating Mode: ENHANCEMENT MODE

Enhancement mode offers greater control over the transistor's operation, optimizing performance in various applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of operating in the ultra high frequency band, this transistor is suitable for high-speed communication applications.

Maximum Drain Current (Abs) (ID): 0.25 A

A maximum drain current of 0.25 A allows for reasonable power handling while retaining efficiency in circuit designs.

No. of Terminals: 2

Having only two terminals simplifies circuit design and reduces space requirements.

Maximum Power Dissipation (Abs): 4.75 W

The ability to dissipate up to 4.75 W of power ensures the transistor operates efficiently under various conditions without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to a compact design, allowing for space-efficient circuit arrangements.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology offers high input impedance and low power consumption, making this transistor ideal for a variety of electronic applications.

Maximum Operating Temperature: 165 °C

A high maximum operating temperature ensures reliability in harsh environments, extending the device's operational lifetime.

Transistor Element Material: SILICON

Silicon is a widely used material in FET technology, offering excellent electrical properties and cost-effectiveness.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides better solderability and corrosion resistance, improving connection reliability.

Terminal Position: DUAL

Dual terminal positioning enhances ease of layout and integration into circuits, allowing for versatile design options.

Moisture Sensitivity Level (MSL): 3

A moisture sensitivity level of 3 indicates moderate handling precautions, ensuring longevity and performance in humid or moist environments.

Case Connection: SOURCE

Source connection design facilitates effective thermal management and circuit integration.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum reflow time of 30 seconds ensures efficient soldering processes without compromising device integrity.

Peak Reflow Temperature °C: 250

Operating at a peak reflow temperature of 250 °C enables compatibility with standard soldering processes for assembly.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) PD57002-E attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Maximum Drain Current (Abs) (ID):

.25 A

Maximum Drain Current (ID):

.25 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

165 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

250

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

15 dB

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PD57002-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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