Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
PD57002 by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, power gain of 15 dB, and operates in the ultra-high frequency band. This surface-mount transistor supports up to 4.75W power dissipation.
Median Price
-
Lifecycle Status
Suppliers In-Stock
3
In-Stock Inventory
1k+
Vyrian
1+ parts
100+ parts
1k+ parts
10k+ parts
Anansix
Digiode
IDEA Electronic Components Group
$0.299
$0.269
MKK Technologies
$0.562
DigiPath Technology Company
AZTECH Wire
$10.380
QUARKTWIN TECHNOLOGY LTD
Perfect Parts
Corphita
Parana Technologies
$0.358
The use of plastic/epoxy in the package body ensures durability and resistance to environmental factors, making it suitable for a variety of applications.
N-channel FETs typically offer lower on-resistance and higher efficiency, making this product ideal for amplification and switching applications.
The single configuration offers simplicity and ease of integration into circuits, which is beneficial for compact design.
Designed for amplifier applications, this FET is suitable for enhancing signal strength in various electronic devices.
Surface mount technology facilitates automated assembly and saves space on PCBs, which is crucial for modern electronic designs.
With a minimum breakdown voltage of 65 V, this transistor can withstand higher voltages, increasing reliability in power-sensitive applications.
The minimum power gain of 15 dB ensures effective signal amplification, making it a strong choice for RF applications.
The rectangular shape aids in efficient use of PCB space and allows for easier handling and mounting.
Gull wing leads facilitate better soldering during assembly, ensuring a secure connection and reducing potential failures.
Enhancement mode operation allows for full control over the channel, leading to improved performance in switching and amplification.
Capability to operate in the ultra high frequency band makes this FET suitable for advanced communication systems and high-speed applications.
A maximum drain current of 0.25 A provides adequate current handling for many applications, ensuring robust performance.
Having just two terminals simplifies the design and layout of circuits, making it user-friendly for engineers.
A maximum power dissipation of 4.75 W allows this FET to handle significant power without overheating, improving reliability.
The small outline package style is space-efficient, making it ideal for compact devices where real estate is at a premium.
MOS technology offers high input impedance and low power consumption, making it suitable for battery-operated devices.
With a maximum operating temperature of 165 °C, this FET can perform in high-temperature environments, enhancing its application range.
Silicon is a well-established semiconductor material, providing reliable performance and wide availability in the market.
The tin-lead finish ensures good solderability and reliable electrical connections, which are critical for device longevity.
The specified maximum drain current of 0.25 A indicates robust current handling capabilities for various applications.
Dual terminal position offers versatility in circuit design and layout options, improving usability.
Direct source connection simplifies circuit design and facilitates easier integration into RF amplifiers.
RF Small Signal Field Effect Transistors (FET) PD57002 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from STMicroelectronics
Additional Features:
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Field Effect Transistor Technology:
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Minimum Power Gain (Gp):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
PD57002 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
2N7002
Central Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .115 A; Maximum Drain Current (Abs) (ID): .115 A;
1N4148
Kec
RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Non Repetitive Peak Forward Current: 2 A; Config: SINGLE; Maximum Operating Temperature: 200 Cel;
M24308/2-1F
Souriau-sunbank Connection Technologies
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Body Length: 1.228 inch; Mounting Type: CABLE AND PANEL; Termination Type: CRIMP;
BSS84-7-F
Diodes Incorporated
Diodes Inc. BSS84-7-F is a P-channel FET with 50V DS breakdown voltage, 0.13A max drain current, and 10 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode at up to 150°C, it has Gull Wing terminals and matte tin finish.
LL4148
Rectron
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N7002-7-F
Diodes Inc. 2N7002-7-F is a N-channel FET with 60V DS breakdown voltage, 0.115A max drain current, and 13.5 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features Gull Wing terminals, small outline package style, and operates up to 150°C.
BAV99W-7-F
Diodes Incorporated BAV99W-7-F is a fast recovery rectifier diode with 2 elements in series connected, center tap configuration. It has a max reverse recovery time of 0.004 us and can handle a max output current of 0.15 A. Ideal for applications requiring fast switching capabilities and operating temperatures ranging from -65 to 150 °C.
SMBJ18CA
Fagor Electronica S Coop
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Hy Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ERJ3EKF1002V
Panasonic
Panasonic's ERJ3EKF1002V is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance.
2N2222A
Itt Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
ABS25-32.768KHZ-1-T
Abracon
Abracon's ABS25-32.768KHZ-1-T crystal oscillator offers 10 ppm frequency tolerance, 126% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal operating frequency, such as IoT devices and precision timing systems.
BSS138
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;
Eic Semiconductor
LM2931AZ-5.0RAG
Onsemi
LM2931AZ-5.0RAG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V nominal output voltage, 0.1A max output current, and 0.6V max dropout voltage. Ideal for applications requiring stable voltage regulation in temperature-sensitive environments up to 150°C.
Crimson Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Concord Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V;
STM32F401CDY6TR
STMicroelectronics
STM32F401CDY6TR by STMicroelectronics is a 32-bit microcontroller with 393216 ROM words, 50 MHz clock frequency, and 36 I/O lines. It is used in applications requiring high-speed processing, such as industrial automation and consumer electronics.
DS18B20U
Maxim Integrated
DS18B20U by Maxim Integrated is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
CRCW06031K00FKEAHP
Vishay Intertechnology
Vishay Intertechnology's CRCW06031K00FKEAHP is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.33 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance and operating voltage of 75 V.
934031470115
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 12 V; JESD-609 Code: e3; Terminal Position: DUAL;
BLM7G1822S-20PBGY
Ampleon Netherlands B V
RF Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BF244ARLRE
BF244ARLRE by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. It operates in DEPLETION MODE for ULTRA HIGH FREQUENCY AMPLIFIER applications. This THROUGH-HOLE transistor has a max ID of 0.1A and a CYLINDRICAL package shape.
934057514135
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY;
3SK168E
N-CHANNEL; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation Ambient: .25 W; Field Effect Transistor Technology: METAL SEMICONDUCTOR;
2N3823UB
Microsemi
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Terminal Position: DUAL; JESD-30 Code: R-CDSO-N3;
BF2030WE6327
Infineon Technologies
BF2030WE6327 by Infineon Technologies is an N-CHANNEL RF FET with 10V DS Breakdown Voltage, 20dB Power Gain, and 0.2W Power Dissipation. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND due to DUAL GATE, DEPLETION MODE operation. Package: PLASTIC/EPOXY, Surface Mountable with GULL WING terminals.
2SK544D
The Onsemi 2SK544D is an N-CHANNEL RF FET with a max drain current of 0.03A, operating in DEPLETION MODE for AMPLIFIER applications. It features a METAL-OXIDE SEMICONDUCTOR technology and operates in the VERY HIGH FREQUENCY BAND, making it suitable for high-frequency signal amplification in various electronic devices.
BF513,215
The NXP Semiconductors BF513,215 is a single N-channel RF FET with a max power dissipation of 0.25W and operating temperature of 150°C. Ideal for amplifier applications in the very high frequency band, it features a min DS breakdown voltage of 20V and terminal finish in Tin (Sn).
2N5486RLRPG
2N5486RLRPG by Onsemi is an N-CHANNEL RF FET with a power gain of 10 dB, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It has a max power dissipation of 0.31 W and operates in DEPLETION MODE at up to 150 °C, featuring a JUNCTION technology and SILICON element material.
933615000215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: AMPLIFIER; Transistor Element Material: SILICON; Terminal Position: DUAL;
ATF-54143-TR2G
Agilent Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Case Connection: SOURCE; Highest Frequency Band: C BAND;
MMBF5484
National Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;
VMMK-1218-TR1G
Broadcom
Broadcom's VMMK-1218-TR1G is an N-channel RF FET with a min DS breakdown voltage of 5V and power gain of 6.7dB, ideal for amplifier applications in the Ku band. This single configuration transistor operates in enhancement mode, with a max drain current of 0.1A and high electron mobility technology for efficient performance.
2N3823
Microchip Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-MBCY-W4; JESD-609 Code: e0; Maximum Feedback Capacitance (Crss): 2 pF;
BLM8G0710S-30PB
RF Small Signal Field-Effect Transistors;
ATF-55143-BLKG
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PDSO-G4;
BF908
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Position: DUAL; Qualification: Not Qualified;
MMBFJ211
MMBFJ211 by Onsemi is an N-CHANNEL RF FET with a PLASTIC/EPOXY package. Operating in DEPLETION MODE, it's ideal for AMPLIFIER applications in the VERY HIGH FREQUENCY BAND. With a max power dissipation of 0.225 W and operating temperature of 150°C, this transistor offers high performance in a SMALL OUTLINE package.
BF904A
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Drain Current (Abs) (ID): .03 A; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
PD57002-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.75 W; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30;
PD57002S
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.75 W; JESD-30 Code: R-PDSO-F2; Minimum Power Gain (Gp): 15 dB;
PD57002S-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.75 W; Additional Features: HIGH RELIABILITY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved