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PD57002

STMicroelectronics

PD57002 by STMicroelectronics

PD57002 by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, power gain of 15 dB, and operates in the ultra-high frequency band. This surface-mount transistor supports up to 4.75W power dissipation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,046 parts In-Stock

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5,046

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Anansix

USA . 2,676 parts In-Stock

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2,676

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Digiode

USA . 1,083 parts In-Stock

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1,083

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,907 parts In-Stock

1+ parts

$0.299

100+ parts

-

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$0.269

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1,907

$0.299

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$0.269

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MKK Technologies

India . 1,365 parts In-Stock

1+ parts

$0.562

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1,365

$0.562

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DigiPath Technology Company

USA . 1,365 parts In-Stock

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$0.562

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1,365

$0.562

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AZTECH Wire

Italy . 1,082 parts In-Stock

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$10.380

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1,082

$10.380

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QUARKTWIN TECHNOLOGY LTD

USA . 24,818 parts In-Stock

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24,818

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Perfect Parts

USA . 23,768 parts In-Stock

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Corphita

USA . 2,250 parts In-Stock

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2,250

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Parana Technologies

USA . 1,407 parts In-Stock

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$0.358

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1,407

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$0.358

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Overview

Elevate your RF applications with the PD57002 from STMicroelectronics, a trusted leader in semiconductor innovation. This N-channel FET delivers outstanding performance for amplifiers, boasting impressive power gain and reliability—perfect for ultra-high frequency operations. With its compact surface mount design and robust build, it seamlessly integrates into a variety of systems, ensuring longevity and efficiency. Experience enhanced signal clarity and robust power handling, making the PD57002 an indispensable asset for your next project!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package body ensures durability and resistance to environmental factors, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer lower on-resistance and higher efficiency, making this product ideal for amplification and switching applications.

Configuration: SINGLE

The single configuration offers simplicity and ease of integration into circuits, which is beneficial for compact design.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this FET is suitable for enhancing signal strength in various electronic devices.

Surface Mount: YES

Surface mount technology facilitates automated assembly and saves space on PCBs, which is crucial for modern electronic designs.

Minimum DS Breakdown Voltage: 65 V

With a minimum breakdown voltage of 65 V, this transistor can withstand higher voltages, increasing reliability in power-sensitive applications.

Minimum Power Gain (Gp): 15 dB

The minimum power gain of 15 dB ensures effective signal amplification, making it a strong choice for RF applications.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient use of PCB space and allows for easier handling and mounting.

Terminal Form: GULL WING

Gull wing leads facilitate better soldering during assembly, ensuring a secure connection and reducing potential failures.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for full control over the channel, leading to improved performance in switching and amplification.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capability to operate in the ultra high frequency band makes this FET suitable for advanced communication systems and high-speed applications.

Maximum Drain Current (Abs) (ID): 0.25 A

A maximum drain current of 0.25 A provides adequate current handling for many applications, ensuring robust performance.

No. of Terminals: 2

Having just two terminals simplifies the design and layout of circuits, making it user-friendly for engineers.

Maximum Power Dissipation (Abs): 4.75 W

A maximum power dissipation of 4.75 W allows this FET to handle significant power without overheating, improving reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style is space-efficient, making it ideal for compact devices where real estate is at a premium.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology offers high input impedance and low power consumption, making it suitable for battery-operated devices.

Maximum Operating Temperature: 165 °C

With a maximum operating temperature of 165 °C, this FET can perform in high-temperature environments, enhancing its application range.

Transistor Element Material: SILICON

Silicon is a well-established semiconductor material, providing reliable performance and wide availability in the market.

Terminal Finish: TIN LEAD

The tin-lead finish ensures good solderability and reliable electrical connections, which are critical for device longevity.

Maximum Drain Current (ID): 0.25 A

The specified maximum drain current of 0.25 A indicates robust current handling capabilities for various applications.

Terminal Position: DUAL

Dual terminal position offers versatility in circuit design and layout options, improving usability.

Case Connection: SOURCE

Direct source connection simplifies circuit design and facilitates easier integration into RF amplifiers.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) PD57002 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Maximum Drain Current (Abs) (ID):

.25 A

Maximum Drain Current (ID):

.25 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

165 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

15 dB

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PD57002 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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