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2SK544F

Onsemi

2SK544F by Onsemi

Onsemi's 2SK544F is an N-CHANNEL RF Small Signal FET with a max drain current of 0.03A. Operating in DEPLETION MODE, it is ideal for AMPLIFIER applications in the VERY HIGH FREQUENCY BAND. The transistor features a PLASTIC/EPOXY body, THROUGH-HOLE terminals, and METAL-OXIDE SEMICONDUCTOR technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,656 parts In-Stock

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Vyrian

USA . 1,436 parts In-Stock

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Native Components

USA . 474 parts In-Stock

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$0.058

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$0.056

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$0.056

TANS Electronics

Latvia . 7,045 parts In-Stock

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Kulean Microsystems

USA . 5,171 parts In-Stock

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SupplyDigital Components

Austria . 5,032 parts In-Stock

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Kepictronics

USA . 4,200 parts In-Stock

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Problanco Electronics

Mexico . 3,998 parts In-Stock

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Corphita

USA . 1,278 parts In-Stock

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UHIMA Technologies

Türkiye . 564 parts In-Stock

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Corohmni

South Africa . 460 parts In-Stock

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Northwest PG Solutions

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Overview

Immerse yourself in the world of high-quality RF Small Signal Field Effect Transistors with the 2SK544F by Onsemi. Known for their superior manufacturing standards, Onsemi delivers top-notch products like this N-CHANNEL transistor perfect for amplifier applications. With a focus on performance and reliability, the 2SK544F offers customers unmatched value and benefits in the very high-frequency band. Upgrade your electronic projects with the trusted quality and advanced technology of Onsemi's 2SK544F.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the transistor lightweight and durable, ideal for portable applications.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have faster switching speeds and lower on-resistance, making them suitable for high-frequency applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes the transistor easier to set up and integrate into a system.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this transistor can provide high gain and low noise performance, making it suitable for amplifying weak signals.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement on a circuit board and easy mounting.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, making the transistor suitable for applications where reliability is crucial.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for high input impedance and better control over the transistor's behavior, making it versatile for various applications.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Operating in the very high frequency band, this transistor is suitable for applications requiring high-speed signal processing and communication.

No. of Terminals: 3

With 3 terminals, this transistor can be easily connected in a circuit, providing flexibility in design and functionality.

Package Style (Meter): IN-LINE

The in-line package style allows for space-saving placement on a circuit board, ideal for compact designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability, making the transistor suitable for demanding applications.

Transistor Element Material: SILICON

Silicon transistors offer good thermal stability and high breakdown voltage, ensuring the transistor operates reliably even under harsh conditions.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

The terminal finish of tin/copper/silver/nickel provides excellent conductivity and corrosion resistance, ensuring reliable electrical connections.

Maximum Drain Current (ID): 0.03 A

With a maximum drain current of 0.03 A, this transistor can handle moderate power levels, making it suitable for a wide range of applications.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and reduces the chances of errors, ensuring easy integration into a circuit.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2SK544F attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Configuration:

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SK544F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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