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2SK544D

Onsemi

2SK544D by Onsemi

The Onsemi 2SK544D is an N-CHANNEL RF FET with a max drain current of 0.03A, operating in DEPLETION MODE for AMPLIFIER applications. It features a METAL-OXIDE SEMICONDUCTOR technology and operates in the VERY HIGH FREQUENCY BAND, making it suitable for high-frequency signal amplification in various electronic devices.

Median Price

$0.092

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 51,994 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

51,994

-

$0.092

$0.077

$0.068

DigiKey

USA . 51,994 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.120

51,994

-

-

-

$0.120

Verical

USA . 51,994 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.086

51,994

-

-

-

$0.086

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 63 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

-

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-

63

$0.072

-

-

-

Nova Conductors

Japan . 339 parts In-Stock

1+ parts

$0.111

100+ parts

-

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339

$0.111

-

-

-

Vyrian

USA . 45,884 parts In-Stock

1+ parts

-

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45,884

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-

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VNN

France . 674 parts In-Stock

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674

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 465 parts In-Stock

1+ parts

$0.063

100+ parts

-

1k+ parts

-

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465

$0.063

-

-

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Ampacity Inc.

Singapore . 45,635 parts In-Stock

1+ parts

$0.065

100+ parts

-

1k+ parts

-

10k+ parts

-

45,635

$0.065

-

-

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Aztec Data Supply Inc.

USA . 300 parts In-Stock

1+ parts

$0.067

100+ parts

-

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300

$0.067

-

-

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Corphita

USA . 2,359 parts In-Stock

1+ parts

$0.068

100+ parts

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2,359

$0.068

-

-

-

Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.109

100+ parts

-

1k+ parts

$0.104

10k+ parts

-

50

$0.109

-

$0.104

-

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.111

100+ parts

$0.109

1k+ parts

$0.105

10k+ parts

$0.103

50

$0.111

$0.109

$0.105

$0.103

Continental Prestige Electronics

USA . 53,921 parts In-Stock

1+ parts

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100+ parts

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$0.063

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53,921

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-

$0.063

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Problanco Electronics

Mexico . 8,216 parts In-Stock

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8,216

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Kulean Microsystems

USA . 5,511 parts In-Stock

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5,511

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TANS Electronics

Latvia . 2,908 parts In-Stock

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2,908

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SupplyDigital Components

Austria . 977 parts In-Stock

1+ parts

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977

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UHIMA Technologies

Türkiye . 578 parts In-Stock

1+ parts

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578

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Overview

Enhance your RF signal amplification with the 2SK544D by Onsemi - a top-quality N-CHANNEL FET designed for very high frequency applications. Onsemi is a trusted manufacturer known for their reliable and efficient components, ensuring optimal performance in every use. Ideal for amplifiers, this transistor offers unparalleled value and benefits, providing customers with superior signal processing capabilities. Upgrade your electronics with the 2SK544D and experience the difference in quality and performance today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors offer improved efficiency and performance for amplifier applications, making this product a preferred choice.

Configuration: SINGLE

The single configuration simplifies the circuit design and ensures easier integration, making it an ideal choice for amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, this transistor offers optimal performance and compatibility for such purposes.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and handling, making this transistor a convenient choice for installation.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, enhancing the reliability and longevity of the transistor.

Operating Mode: DEPLETION MODE

The depletion mode operation allows for precise control and modulation of signals, making this transistor suitable for high-performance applications.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

With support for very high frequencies, this transistor is perfect for applications that require fast signal processing and high bandwidth.

No. of Terminals: 3

The 3 terminals offer versatile connectivity options and support various circuit configurations, making this transistor a flexible choice for different setups.

Package Style (Meter): IN-LINE

The in-line package style simplifies installation and allows for space-efficient mounting, making this transistor a practical choice for compact designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing MOS technology, this transistor offers low power consumption and high efficiency, making it an energy-efficient choice for electronic circuits.

Transistor Element Material: SILICON

Silicon material ensures stability and durability, enabling the transistor to withstand varying operating conditions and environments.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

The terminal finish enhances conductivity and corrosion resistance, ensuring reliable performance and longevity of the transistor.

Maximum Drain Current (ID): 0.03 A

With a maximum drain current of 0.03 A, this transistor can handle moderate power levels with efficiency, making it a suitable choice for amplifier applications.

Terminal Position: SINGLE

The single terminal position simplifies the installation process and ensures secure connections, making this transistor easy to use and maintain.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2SK544D attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Configuration:

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SK544D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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