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2SK522ETZ

Renesas Electronics

2SK522ETZ by Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum Power Gain (Gp): 20 dB; Terminal Form: THROUGH-HOLE; Maximum Drain Current (ID): .02 A;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 471 parts In-Stock

1+ parts

$0.219

100+ parts

-

1k+ parts

-

10k+ parts

$0.211

471

$0.219

-

-

$0.211

Northwest PG Solutions

USA . 20 parts In-Stock

1+ parts

$0.241

100+ parts

-

1k+ parts

-

10k+ parts

$0.213

20

$0.241

-

-

$0.213

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2SK522ETZ attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Configuration:

Maximum Drain Current (ID):

.02 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Minimum Power Gain (Gp):

20 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SK522ETZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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