Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Drain Current (ID): .02 A; Minimum DS Breakdown Voltage: 30 V; Package Body Material: PLASTIC/EPOXY;
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Northwest PG Solutions
RF Small Signal Field Effect Transistors (FET) 2SK522TZ attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Renesas Electronics
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
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Transistor Application:
Transistor Element Material:
2SK522TZ Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
FDN5618P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
BAV99
Panasonic
MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
M85049/85-08W02
Amphenol
CIRCULAR CONN ACCESSORY; Shell Sizes: 8; 9; IEC Conformity: NO; MIL-Connector Accessory Name: BAND LOCK ADAPTER; MIL Conformity: YES; DIN Conformity: NO;
SMMBT2222ALT1G
Onsemi
SMMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, 0.6A IC, and 40V VCE. It has a hFE of 75, fT of 300MHz, and operates up to 150°C. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance.
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
CSNF651
Honeywell Sensing And Control
CSNF651 by Honeywell Sensing And Control is an industrial-grade analog circuit with 3 terminals. It operates b/w -40 to 85°C, supporting supply voltages from -15V to 15V. Ideal for applications requiring a special shape rectangular package style and through-hole terminal form.
SZNUP2105LT1G
SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.
BSS138W-7-F
Diodes Incorporated
Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.
EU2B-YS3203C
Idec
ROTARY SWITCH;
2N2222A
Raytheon Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Minimum DC Current Gain (hFE): 100; Maximum Turn On Time (ton): 35 ns;
LM555CM
National Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
SS14
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Philips Components
Vishay Intertechnology
Vishay Intertechnology's SS14 is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 1A. Operating at up to 125°C, it has a repetitive peak reverse voltage of 40V. Ideal for surface mount applications, it suits various electronic circuits requiring efficient rectification and low forward voltage drop.
Transistor & Electronic
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
ERJ2RKF1002X
Panasonic's ERJ2RKF1002X is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance and operating temperature range of -55 to 155 °C.
LM107H/883C
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Package Equivalence Code: CAN8,.2;
Yangzhou Yangjie Electronics
NE5550279A-T1-A
Renesas Electronics
NE5550279A-T1-A by Renesas Electronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.6A Drain Current, and 6.25W Power Dissipation. It operates in ULTRA HIGH FREQUENCY BAND for RF applications like amplifiers due to its ENHANCEMENT MODE and MICROWAVE package style.
2N4416
Solitron Devices
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Qualification: Not Qualified; Package Style (Meter): CYLINDRICAL;
BF908R-T
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PDSO-G4; Minimum DS Breakdown Voltage: 12 V;
BF1217WR
BF1217WR by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a dual gate enhancement mode, operates at ultra-high frequencies, and has a min breakdown voltage of 6V. This compact surface mount device ensures efficient performance in various electronic circuits.
BF909
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Qualification: Not Qualified; Terminal Form: GULL WING; Transistor Application: AMPLIFIER;
2SK161
Toshiba
Toshiba's 2SK161 is an N-CHANNEL RF FET with a DEPLETION MODE. Operating in the VERY HIGH FREQUENCY BAND, it has a power dissipation of 0.2 W and max temperature of 125 °C. Ideal for AMPLIFIER applications due to its SILICON element material and low feedback capacitance of 0.15 pF.
ATF-541M4-BLK
Broadcom
Broadcom's ATF-541M4-BLK is an N-channel RF FET with 15.5 dB power gain, suitable for amplifier applications in C band frequencies. It features a plastic/epoxy package, operates in enhancement mode, and has a max power dissipation of 0.36 W at 150°C.
J310
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Peak Reflow Temperature (C): NOT SPECIFIED; Qualification: Not Qualified;
BF909R
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; No. of Terminals: 4; Terminal Finish: TIN; Maximum Operating Temperature: 150 Cel;
J308RL
J308RL by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a SINGLE configuration and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
MMBF5484LT1G
MMBF5484LT1G by Onsemi is an N-CHANNEL RF FET with 16 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a very high frequency band and 3 terminals. With a max power dissipation of 0.225 W, this JUNCTION FET has a temp range of -55 to 150 °C.
BF556B-T
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Package Shape: RECTANGULAR; Field Effect Transistor Technology: JUNCTION;
BF998WR-T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G4;
CLF1G0035S-100PU
The NXP Semiconductors CLF1G0035S-100PU is an RF FET with 150V DS breakdown voltage, operating in depletion mode. It features N-channel polarity, common source configuration, and gallium nitride element material. Ideal for S band applications like amplifiers due to its high electron mobility technology.
2N5486RLRE
2N5486RLRE by Onsemi is an N-CHANNEL RF FET with a single configuration for AMPLIFIER applications. It offers a Min Power Gain of 10 dB and operates in DEPLETION MODE at up to 150 °C. This ULTRA HIGH FREQUENCY transistor has a Max Drain Current of 0.03 A and Max Feedback Capacitance of 1 pF, making it suitable for high-frequency amplification needs.
BF904
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (Abs) (ID): .03 A; Terminal Finish: Tin (Sn); Case Connection: SOURCE;
PD57002-E
STMicroelectronics
PD57002-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, max drain current of 0.25A, and operates in the ultra-high frequency band. Ideal for compact surface mount designs, it ensures efficient performance up to 165 °C.
BF545C-TAPE-13
BF545C-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
MPF102G
MPF102G by Onsemi is an N-CHANNEL RF FET with a 25V DS breakdown voltage, ideal for AMPLIFIER applications in the VERY HIGH FREQUENCY BAND. Featuring a DEPLETION MODE operation, it has a max power dissipation of 0.2W and can withstand up to 125 °C operating temperature.
BF244ARL1
BF244ARL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND. Features include SINGLE configuration, DEPLETION MODE, and 0.1A ID max drain current.
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2SK544D
The Onsemi 2SK544D is an N-CHANNEL RF FET with a max drain current of 0.03A, operating in DEPLETION MODE for AMPLIFIER applications. It features a METAL-OXIDE SEMICONDUCTOR technology and operates in the VERY HIGH FREQUENCY BAND, making it suitable for high-frequency signal amplification in various electronic devices.
2SK544F
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Maximum Drain Current (ID): .03 A; No. of Elements: 1;
2SK544E
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Package Style (Meter): IN-LINE; Additional Features: LOW NOISE;
2SK54
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): CYLINDRICAL;
2SK522ERF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Package Body Material: PLASTIC/EPOXY; Operating Mode: DEPLETION MODE;
2SK521-C
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: R-PSIP-W3; Maximum Feedback Capacitance (Crss): .6 pF; Qualification: Not Qualified;
2SK522ERR
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: R-PSIP-T3; No. of Terminals: 3; Transistor Element Material: SILICON;
2SK522
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSIP-T3;
2SK522ETZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum Power Gain (Gp): 20 dB; Terminal Form: THROUGH-HOLE; Maximum Drain Current (ID): .02 A;
2SK522FRF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Operating Mode: DEPLETION MODE; No. of Terminals: 3;
2SK522RR
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): IN-LINE; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 3;
2SK522DTZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Field Effect Transistor Technology: JUNCTION; Transistor Element Material: SILICON;
2SK521-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: R-PSIP-W3; Highest Frequency Band: VERY HIGH FREQUENCY BAND; No. of Terminals: 3;
2SK522DRF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Terminal Form: THROUGH-HOLE; No. of Elements: 1;
2SK522FRR
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: R-PSIP-T3; No. of Elements: 1; No. of Terminals: 3;
2SK522FTZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-PSIP-T3; Transistor Element Material: SILICON;
2SK521
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; Package Style (Meter): IN-LINE; Operating Mode: DEPLETION MODE;
2SK521-D
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Form: WIRE; Transistor Element Material: SILICON; Qualification: Not Qualified;
2SK522DRR
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Terminal Form: THROUGH-HOLE; Operating Mode: DEPLETION MODE;
2SK522TZ
Renesas Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; Transistor Application: AMPLIFIER;
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