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2N5485

Onsemi

2N5485 by Onsemi

Onsemi's 2N5485 is an N-CHANNEL RF FET with 10 dB Gp, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. With a max ID of 0.03 A and Pd of 0.31 W, this JUNCTION FET operates in DEPLETION MODE efficiently up to 150 °C.

Median Price

$4.250

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

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Freelance Electronics

USA . 47 parts In-Stock

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$1.950

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$2.048

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American Microsemiconductor Inc.

USA . 9,473 parts In-Stock

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Forefront Electronics and Design

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Kruse Electronics AG

Switzerland . 10,000 parts In-Stock

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Digiode

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Prism Electronics

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MISTER SPROCKETS

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Vyrian

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Fibra_Brandt Electronic GMBH

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ECAB

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ACDS - Activité Composants Distribution Service

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Electronic Expediters

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Resion

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LittleDiode

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A2Z Electronics, Inc.

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ICP Electronique

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Sogenti Electronics

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Corohmni

South Africa . 237 parts In-Stock

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Microchip USA

USA . 4,485 parts In-Stock

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One Stop Electronics

USA . 157 parts In-Stock

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Component Stockers USA

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

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UNI Independent Distributors

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A-Z Elektronik GmbH

Germany . 6,528 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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Corphita

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Perfect Parts

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Supply Digital

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Problanco Electronics

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Glotronic Ltd.

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Native Components

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Northwest PG Solutions

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Assy Fe

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UHIMA Technologies

Türkiye . 210 parts In-Stock

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Cyclops Electronics Ltd (Excess)

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RTC Component Inc.

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Overview

Enhance your electronic projects with the 2N5485 by Onsemi, a top-quality RF Small Signal Field Effect Transistor. Manufactured by Onsemi, this N-CHANNEL FET offers exceptional performance in amplifier applications. Its ultra-high frequency band capabilities and high power gain ensure optimal signal amplification. Designed for easy integration with its wire terminals and cylindrical package, the 2N5485 provides reliable operation and efficient power dissipation. Elevate your designs with the 2N5485 and experience unparalleled quality and precision from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan in various environments.

Polarity or Channel Type: N-CHANNEL

Allows for efficient amplification and control of current flow, making it suitable for amplifier applications.

Minimum Power Gain (Gp): 10 dB

Offers a decent level of power gain, improving the signal strength in amplifier circuits.

Operating Mode: DEPLETION MODE

Provides flexibility in controlling the transistor's conductivity, allowing for precise amplification in different operating conditions.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for applications where heat dissipation is a concern.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5485 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

10 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5485 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-449-3751, 5961004493751, 5961-14-314-7996, 5961143147996

NIIN

004493751, 143147996

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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