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2N5486RL

Onsemi

2N5486RL by Onsemi

2N5486RL by Onsemi is an N-CHANNEL RF FET with 10 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance up to 150 °C. Featuring JUNCTION tech, it has a max ID of 0.03 A and Crss of 1 pF in a CYLINDRICAL package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,146 parts In-Stock

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Vyrian

USA . 765 parts In-Stock

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Northwest PG Solutions

USA . 382 parts In-Stock

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$2.596

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Kulean Microsystems

USA . 7,267 parts In-Stock

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SupplyDigital Components

Austria . 2,682 parts In-Stock

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Problanco Electronics

Mexico . 1,124 parts In-Stock

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Native Components

USA . 968 parts In-Stock

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TANS Electronics

Latvia . 557 parts In-Stock

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UHIMA Technologies

Türkiye . 181 parts In-Stock

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Corohmni

South Africa . 144 parts In-Stock

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Corphita

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Overview

Unlock the power of superior performance with the Onsemi 2N5486RL RF Small Signal Field Effect Transistor. Manufactured by industry leader Onsemi, this N-CHANNEL transistor offers unrivaled quality and reliability for amplifier applications in the ultra-high frequency band. With a minimum power gain of 10 dB and advanced depletion mode technology, this single configuration transistor delivers exceptional value and performance. Elevate your projects to new heights with the Onsemi 2N5486RL - where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, making the transistor suitable for various applications without adding excessive weight.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have lower ON-resistance and higher electron mobility, leading to better performance in amplifiers.

Configuration: SINGLE

Simplified design with only one channel, making it easier to integrate into circuits and reducing complexity.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring high gain and fidelity in signal processing applications.

Minimum Power Gain (Gp): 10 dB

Provides a minimum power gain of 10 dB, indicating strong amplification capabilities for boosting signal strength.

Package Shape: ROUND

Round shape offers better thermal management and ease of handling during installation.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure connection and ease of soldering for reliable circuit performance.

Operating Mode: DEPLETION MODE

Depletion mode transistors offer advantages in certain circuit designs requiring normally-on operation or high input impedance.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for use in ultra-high frequency applications, ensuring reliable performance in advanced communication systems.

No. of Terminals: 3

Three terminals provide the necessary connections for input, output, and biasing, enabling versatile circuit configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers compact form factor and easy integration into various electronic devices.

Field Effect Transistor Technology: JUNCTION

Junction FET technology provides high-speed operation and low noise characteristics, suitable for RF signal processing applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in various environmental conditions without overheating.

Transistor Element Material: SILICON

Silicon material offers high carrier mobility and temperature stability, enhancing the transistor's performance and reliability.

Maximum Drain Current (ID): 0.03 A

Maximum drain current of 0.03 A indicates the transistor's ability to handle moderate power levels in amplifier circuits.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and enhances mechanical stability during installation.

Maximum Feedback Capacitance (Crss): 1 pF

Low feedback capacitance minimizes signal distortion and improves high-frequency response in amplifier applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5486RL attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Minimum Power Gain (Gp):

10 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5486RL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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