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JANTXV2N3823

Defense Logistics Agency

JANTXV2N3823 by Defense Logistics Agency

JANTXV2N3823 by Defense Logistics Agency is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers VERY HIGH FREQUENCY BAND performance. With a METAL package and SILICON element, it's ideal for MIL-19500/375G compliant applications.

Median Price

$55.964

Lifecycle Status

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6

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1k+

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Nova Conductors

Japan . 39 parts In-Stock

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$52.199

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American Microsemiconductor Inc.

USA . 24 parts In-Stock

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$59.730

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Vyrian

USA . 1,545 parts In-Stock

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Electronic Expediters

USA . 5 parts In-Stock

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Odi Ramu Company

Canada . 5 parts In-Stock

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Resion

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AZTECH Wire

Italy . 782 parts In-Stock

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$19.358

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Ampacity Inc.

Singapore . 1,327 parts In-Stock

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$42.050

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Continental Prestige Electronics

USA . 4,124 parts In-Stock

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$52.199

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$51.155

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Netroflash

USA . 1,000 parts In-Stock

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Argo Parts USA

USA . 4,426 parts In-Stock

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Supply Digital

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Overview

Upgrade your RF signal processing with the JANTXV2N3823 by Defense Logistics Agency. Known for their superior quality and reliability, Defense Logistics Agency products are trusted by industry professionals worldwide. This N-CHANNEL field effect transistor offers unparalleled performance in the very high frequency band, making it ideal for a wide range of applications. Experience the value and benefits of this top-of-the-line product, designed to enhance your electronic systems and deliver unmatched results. Elevate your projects with the JANTXV2N3823 today.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides excellent heat dissipation, making the transistor suitable for high power applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility and faster switching speeds compared to P-channel transistors, making them ideal for high-frequency applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and reduces complexity in assembly.

Minimum DS Breakdown Voltage: 30 V

Higher breakdown voltage ensures reliability and protection against voltage spikes.

Package Shape: ROUND

Round package shape allows for easy mounting and integration in various circuit layouts.

Operating Mode: DEPLETION MODE

Depletion mode transistors are suitable for applications where the transistor should be in the conducting state in its natural state.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Very high frequency band capability ensures reliable performance in high-frequency applications.

No. of Terminals: 4

4 terminals provide flexibility in circuit connections and allow for various configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides robustness and durability to the transistor, making it suitable for harsh environments.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high input impedance and low output impedance, making it suitable for high-frequency applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and efficiency in electronic circuits.

Terminal Position: BOTTOM

Bottom terminal position allows for easy and secure connections in the circuit layout.

Maximum Feedback Capacitance (Crss): 2 pF

Low feedback capacitance ensures stable and reliable operation in high-frequency circuits.

Reference Standard: MIL-19500/375G

Compliance with MIL standards ensures high quality, reliability, and performance in military and aerospace applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) JANTXV2N3823 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Defense Logistics Agency

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-MBCY-W4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Reference Standard:

MIL-19500/375G

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Trade Compliance

JANTXV2N3823 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-023-3436, 5961010233436

NIIN

010233436

Manufacturer Highlights

Defense Logistics Agency

As the nation’s combat logistics support agency, the Defense Logistics Agency manages the end-to-end global defense supply chain – from raw materials to end user disposition – for the five military services, 11 combatant commands, other federal, state and local agencies and partner and allied nations. DLA’s mission is to “deliver readiness and lethality to the Warfighter Always and support our nation through quality, proactive global logistics.” To accomplish this mission, DLA has a staff of about 25,000 employees divided into multiple supply chains that contract for material and services across the military classes of supply, to include: subsistence (food/water), clothing and textiles, bulk petroleum and other energy products, construction material and equipment, personal demand items, medical material and equipment, and repair parts for land, sea and air systems.

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