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2N5484ZL1

Onsemi

2N5484ZL1 by Onsemi

2N5484ZL1 by Onsemi is an N-CHANNEL RF FET with 16 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a max ID of 0.03 A and Crss of 1 pF. This JUNCTION FET operates in the ULTRA HIGH FREQUENCY BAND with a CYLINDRICAL package shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,770 parts In-Stock

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Digiode

USA . 1,334 parts In-Stock

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SupplyDigital Components

Austria . 6,512 parts In-Stock

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TANS Electronics

Latvia . 3,911 parts In-Stock

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Kulean Microsystems

USA . 3,855 parts In-Stock

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Corphita

USA . 1,721 parts In-Stock

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Northwest PG Solutions

USA . 1,542 parts In-Stock

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Native Components

USA . 855 parts In-Stock

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Problanco Electronics

Mexico . 789 parts In-Stock

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Corohmni

South Africa . 392 parts In-Stock

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UHIMA Technologies

Türkiye . 299 parts In-Stock

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Overview

Upgrade your RF amplifier with the 2N5484ZL1 by Onsemi! This N-CHANNEL Field Effect Transistor offers superior performance in the Ultra High Frequency Band, providing a power gain of 16 dB for optimal signal amplification. Manufactured by industry leader Onsemi, known for their high-quality components, this transistor is designed for reliability and longevity. Ideal for various applications requiring high-frequency amplification, the 2N5484ZL1 delivers exceptional value and performance to meet your needs. Experience top-notch quality with Onsemi's RF Small Signal FET!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material is durable and lightweight, making the transistor easy to handle and install.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance characteristics compared to P-channel transistors, making this product a good choice for amplifier applications.

Configuration: SINGLE

Single configuration transistors are easier to work with and troubleshoot, making this product ideal for amplifier applications where simplicity is key.

Transistor Application: AMPLIFIER

This transistor is specifically designed for amplifier applications, ensuring optimal performance in amplifying electronic signals.

Minimum Power Gain (Gp): 16 dB

With a minimum power gain of 16 dB, this transistor can efficiently amplify signals while maintaining signal integrity.

Package Shape: ROUND

The round package shape allows for easy installation and helps optimize space in electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a sturdy connection to the circuit board, ensuring reliability in amplifier applications.

Operating Mode: DEPLETION MODE

Depletion mode transistors can provide higher power output compared to enhancement mode transistors, making this product suitable for amplifier applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

This transistor is designed to operate in the ultra-high frequency band, allowing for high-speed signal processing in amplifier applications.

No. of Terminals: 3

Having 3 terminals allows for efficient connection in amplifier circuits, ensuring reliable performance.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compact and space-efficient, making it ideal for applications where space is limited.

Field Effect Transistor Technology: JUNCTION

Junction field-effect transistor technology offers high input impedance and low output impedance, making this product suitable for amplifier applications.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and performance, making this product a durable choice for amplifier applications.

Maximum Drain Current (ID): 0.03 A

With a maximum drain current of 0.03 A, this transistor can handle high power levels in amplifier applications.

Terminal Position: BOTTOM

The bottom terminal position is convenient for circuit board layout and ensures easy connection in amplifier applications.

Maximum Feedback Capacitance (Crss): 1 pF

The low maximum feedback capacitance of 1 pF helps reduce signal distortion and ensures high-frequency stability in amplifier applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5484ZL1 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Minimum Power Gain (Gp):

16 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5484ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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