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MRF966

Motorola

MRF966 by Motorola

MRF966 by Motorola is an N-CHANNEL RF FET for AMPLIFIER applications. It operates in DUAL GATE, DEPLETION MODE with ULTRA HIGH FREQUENCY BAND support. With a max power dissipation of 0.35W and operating temp up to 125°C, it's ideal for high-frequency signal amplification needs.

Median Price

$7.000

Lifecycle Status

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DF Sales Co.

USA . 1,527 parts In-Stock

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DF Sales Co.

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Nova Conductors

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Prism Electronics

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GES GmbH

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ACDS - Activité Composants Distribution Service

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Component Electronics Inc.

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Argo Parts USA

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Continental Prestige Electronics

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Overview

Experience the cutting-edge technology and superior quality of the MRF966 by Motorola, a leading manufacturer in the industry. Designed for RF Small Signal applications, this N-CHANNEL FET provides exceptional performance and reliability in amplifiers. With a package body material of PLASTIC/EPOXY and a maximum operating temperature of 125 °C, this transistor offers unmatched value and benefits to customers. Trust Motorola to deliver innovation and excellence in every component, making the MRF966 a top choice for your electronic needs.

Feature Benefit Bullets

Package Body Material: Plastic/Epoxy

Provides good protection for the transistor components and is lightweight, making it a durable and portable option.

Polarity or Channel Type: N-channel

Offers efficient signal amplification and allows for easy integration with other N-channel components.

Configuration: Single

Simplified design and operation for straightforward amplifier applications.

Transistor Application: Amplifier

Specifically designed for amplifier applications, ensuring optimal performance in signal boosting.

Surface Mount: Yes

Compatible with surface mount technology for easy installation on circuit boards.

Minimum DS Breakdown Voltage: 10 V

Ensures reliable operation and protection against voltage spikes.

Package Shape: Round

Allows for easy handling and placement within electronic devices.

Terminal Form: Flat

Facilitates secure connections and soldering to circuit boards.

Operating Mode: Dual Gate, Depletion Mode

Enables precise control over signal amplification and power consumption.

Highest Frequency Band: Ultra High Frequency Band

Ideal for applications requiring high-frequency signal processing.

Maximum Drain Current (Abs) (ID): 0.08 A

Capable of handling moderate current levels for consistent performance.

No. of Terminals: 4

Provides multiple connection points for versatile circuit design.

Maximum Power Dissipation (Abs): 0.35 W

Efficiently dissipates heat to maintain optimal operating conditions.

Package Style (Meter): Disk Button

Unique package style that allows for compact integration in small electronic devices.

Field Effect Transistor Technology: Metal Semiconductor

Utilizes advanced technology for improved signal processing and efficiency.

Maximum Operating Temperature: 125 °C

Capable of operating at high temperatures without compromising performance.

Transistor Element Material: Gallium Arsenide

Provides enhanced conductivity and performance for high-frequency applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Durable terminal finish that ensures reliable connections and longevity.

Maximum Drain Current (ID): 0.08 A

Designed to handle maximum drain current for consistent and reliable operation.

Terminal Position: Radial

Facilitates easy installation and connections in circuit board layouts.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) MRF966 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Motorola

Specs

Configuration:

Minimum DS Breakdown Voltage:

10 V

Maximum Drain Current (Abs) (ID):

.08 A

Maximum Drain Current (ID):

.08 A

Field Effect Transistor Technology:

METAL SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-PRDB-F4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

DISK BUTTON

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

MRF966 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Motorola

Motorola Solutions, Inc., is an American video equipment, telecommunications equipment, software, systems and services provider that succeeded Motorola, Inc., following the spinoff of the mobile phone division into Motorola Mobility in 2011. The company is headquartered in Chicago, Illinois.

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