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BFW11

NXP Semiconductors

BFW11 by NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 30 V; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Case Connection: SHIELD;

Median Price

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Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,951 parts In-Stock

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4,951

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Anansix

USA . 3,426 parts In-Stock

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3,426

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Digiode

USA . 3,265 parts In-Stock

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3,265

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ComSIT Distribution GmbH

Germany . 825 parts In-Stock

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825

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ComSIT USA

USA . 825 parts In-Stock

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825

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LWI Electronics Inc

India . 511 parts In-Stock

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511

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GES GmbH

Germany . 185 parts In-Stock

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Pegasus Components GmbH

Germany . 50 parts In-Stock

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50

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Huijzer Components

Netherlands . 21 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 19 parts In-Stock

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Holdelec - ElecDif-Pro

France . 19 parts In-Stock

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ECAB

Sweden . 14 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 5 parts In-Stock

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Sinequanon

UK . 5 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 1,322 parts In-Stock

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$0.267

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$0.256

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Northwest PG Solutions

USA . 821 parts In-Stock

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$1.199

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$1.199

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Parana Technologies

USA . 1,670 parts In-Stock

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$1.459

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$2.145

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$1.459

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DigiPath Technology Company

USA . 402 parts In-Stock

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$1.606

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$1.606

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ChromeModa Solutions

Germany . 4,426 parts In-Stock

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$1.639

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$1.344

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IDEA Electronic Components Group

UK . 70 parts In-Stock

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$1.475

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One Stop Electronics

USA . 1,103 parts In-Stock

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$6.050

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AZTECH Wire

Italy . 841 parts In-Stock

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$12.310

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841

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Corphita

USA . 4,381 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,301 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,264 parts In-Stock

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Infinite Electronics LLP (Excess)

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UNI Independent Distributors

Spain . 1,207 parts In-Stock

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Assy Fe

Spain . 1 parts In-Stock

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Technical Specifications

RF Small Signal Field Effect Transistors (FET) BFW11 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Case Connection:

SHIELD

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.02 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

.8 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BFW11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-551-1172, 5961005511172, 5961-25-115-4337, 5961251154337

NIIN

005511172, 251154337

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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