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CLF1G0035-100PU

NXP Semiconductors

CLF1G0035-100PU by NXP Semiconductors

NXP Semiconductors' CLF1G0035-100PU is an N-CHANNEL RF FET with 150V DS breakdown voltage. It features a common source configuration, suitable for S BAND applications like amplifiers. The transistor utilizes high electron mobility GaN technology in a ceramic-metal package with flange mount style.

Median Price

$256.225

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 25 parts In-Stock

1+ parts

$218.060

100+ parts

$204.980

1k+ parts

$191.890

10k+ parts

-

25

$218.060

$204.980

$191.890

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DigiKey

USA . 25 parts In-Stock

1+ parts

$272.580

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-

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25

$272.580

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RFMW

USA . 36 parts In-Stock

1+ parts

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36

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Verical

USA . 25 parts In-Stock

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-

100+ parts

$256.225

1k+ parts

$239.863

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25

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$256.225

$239.863

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$225.760

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10

$225.760

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Digiode

USA . 1,281 parts In-Stock

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$262.570

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1,281

$262.570

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Vyrian

USA . 8,153 parts In-Stock

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8,153

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Anansix

USA . 2,868 parts In-Stock

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2,868

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Bristol Electronics

USA . 1,000 parts In-Stock

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1,000

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 273 parts In-Stock

1+ parts

$0.390

100+ parts

-

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273

$0.390

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Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$0.817

100+ parts

$0.743

1k+ parts

$0.670

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270

$0.817

$0.743

$0.670

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AZTECH Wire

Italy . 416 parts In-Stock

1+ parts

$6.148

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416

$6.148

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Corohmni

South Africa . 320 parts In-Stock

1+ parts

$224.077

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320

$224.077

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Continental Prestige Electronics

USA . 589 parts In-Stock

1+ parts

$225.760

100+ parts

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$221.245

589

$225.760

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$221.245

Ampacity Inc.

Singapore . 28 parts In-Stock

1+ parts

$234.930

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28

$234.930

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Semicontronic

India . 28 parts In-Stock

1+ parts

$234.930

100+ parts

$229.057

1k+ parts

$227.882

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28

$234.930

$229.057

$227.882

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Corphita

USA . 1,448 parts In-Stock

1+ parts

$248.751

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1,448

$248.751

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UNI Independent Distributors

Spain . 7,043 parts In-Stock

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7,043

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Argo Parts USA

USA . 3,318 parts In-Stock

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3,318

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Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$221.245

1k+ parts

$214.472

10k+ parts

$209.957

500

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$221.245

$214.472

$209.957

Perfect Parts

USA . 22 parts In-Stock

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22

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Overview

Unleash the power of cutting-edge technology with the CLF1G0035-100PU by NXP Semiconductors. As a top manufacturer in the industry, NXP delivers exceptional quality and reliability in RF Small Signal Field Effect Transistors. Ideal for amplifier applications in the S band, this transistor offers unparalleled performance and durability. With a minimum DS breakdown voltage of 150V and a dual terminal position, the CLF1G0035-100PU provides customers with unmatched value and benefits. Upgrade your projects with this high-electron mobility transistor and experience superior results like never before.

Feature Benefit Bullets

Package Body Material:

CERAMIC, METAL-SEALED COFIRED - This material provides high thermal conductivity and durability, making it suitable for high-power applications.

Polarity or Channel Type:

N-CHANNEL - N-channel transistors typically have better performance and higher conductivity, making this product an efficient choice for amplification tasks.

Configuration:

COMMON SOURCE, 2 ELEMENTS - This configuration allows for easy control of the transistor's output and is ideal for various amplifier designs.

Transistor Application:

AMPLIFIER - Designed specifically for amplification tasks, this transistor ensures high signal gain and low noise performance.

Surface Mount:

YES - Being surface mount compatible makes this transistor easy to install and suitable for space-constrained applications.

Minimum DS Breakdown Voltage:

150 V - With a high breakdown voltage, this transistor can handle high-power applications without the risk of failure.

Package Shape:

RECTANGULAR - The rectangular shape allows for easy integration into circuit layouts and provides efficient heat dissipation.

Terminal Form:

FLAT - Flat terminals ensure secure connections and facilitate soldering, enhancing the overall reliability of the transistor.

Operating Mode:

DEPLETION MODE - Depletion mode operation allows for precise control over the transistor's conductance, making it suitable for specific circuit requirements.

Highest Frequency Band:

S BAND - This transistor is optimized for use in the S band frequency range, ensuring reliable performance in high-frequency applications.

No. of Elements:

2 - With two elements, this transistor provides flexibility in circuit design and can handle more complex signal processing tasks.

No. of Terminals:

4 - The four terminals offer additional connection options and allow for more precise control over the transistor's performance.

Package Style (Meter):

FLANGE MOUNT - The flange mount package style ensures easy installation and secure mounting, making it suitable for rugged environments.

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY - High electron mobility technology enables high-speed operation and low power consumption, making this transistor energy-efficient.

Transistor Element Material:

GALLIUM NITRIDE - Gallium nitride is known for its high electron mobility and thermal stability, ensuring reliable performance in demanding applications.

Terminal Position:

DUAL - Dual terminal position provides additional flexibility in circuit design and allows for efficient signal routing.

Case Connection:

SOURCE - The source case connection enhances the efficiency of the transistor by providing a common point for the signal and power supply.

Reference Standard:

IEC-60134 - Compliant with IEC standards, this transistor meets international quality and safety requirements, ensuring reliable and consistent performance.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) CLF1G0035-100PU attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

150 V

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

S BAND

JESD-30 Code:

R-CDFM-F4

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Reference Standard:

IEC-60134

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

CLF1G0035-100PU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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