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CLF1G0060S-10U

NXP Semiconductors

CLF1G0060S-10U by NXP Semiconductors

CLF1G0060S-10U by NXP Semiconductors is a high-performance N-channel FET designed for C-band amplification. It features a 150V breakdown voltage, operates in depletion mode, and utilizes gallium nitride technology for superior efficiency. Ideal for RF applications, it comes in a flatpack ceramic package.

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Chip Stock

USA . 152,000 parts In-Stock

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Vyrian

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Digiode

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Anansix

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Native Components

USA . 586 parts In-Stock

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Northwest PG Solutions

USA . 2,059 parts In-Stock

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One Stop Electronics

USA . 843 parts In-Stock

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Component Stockers USA

USA . 248 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 27,749 parts In-Stock

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Microchip USA

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Overview

Unlock superior performance with the CLF1G0060S-10U from NXP Semiconductors—a leader in innovation and quality. This N-channel RF Small Signal FET excels in amplifier applications, delivering excellent efficiency and high-frequency operation in compact designs. Crafted with precision in a durable ceramic package, it ensures longevity and reliability. Elevate your projects with this advanced transistor, designed to enhance signal integrity and drive exceptional results!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic, metal-sealed co-fired package ensures excellent thermal stability and durability, making it suitable for high-performance applications.

Polarity or Channel Type: N-CHANNEL

N-channel configuration allows for efficient conduction and better performance in switching applications, which is beneficial for RF amplification.

Configuration: SINGLE

Having a single configuration simplifies integration into circuits, making it ideal for various applications without unnecessary complexity.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this FET can deliver high gain, which is essential for RF communication systems.

Surface Mount: YES

Surface mount capability allows for compact design and easy integration into modern electronic assemblies, enhancing space efficiency.

Minimum DS Breakdown Voltage: 150 V

A high breakdown voltage indicates robustness and the ability to withstand high-voltage applications, increasing reliability in demanding environments.

Package Shape: RECTANGULAR

The rectangular package shape can facilitate efficient layout and optimize board space usage in circuit designs.

Terminal Form: FLAT

Flat terminals provide secure mounting and excellent electrical contact, optimizing performance and reducing parasitic effects.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for versatile control over the device, which is useful in certain applications requiring low power consumption.

Highest Frequency Band: C BAND

Support for the C band enables this FET to operate effectively in a range of communication applications, including satellite and microwave systems.

No. of Terminals: 2

The two-terminal design simplifies integration into circuits, making it efficient for various applications, particularly in compact electronics.

Package Style (Meter): FLATPACK

Flatpack style contributes to low-profile designs, making it ideal for space-constrained applications without compromising performance.

Field Effect Transistor Technology: HIGH ELECTRON MOBILITY

High electron mobility technology allows for faster switching speed and higher efficiency, contributing to superior performance in RF applications.

Transistor Element Material: GALLIUM NITRIDE

Gallium nitride offers high efficiency and thermal conductivity, making it suitable for high-power and high-frequency applications.

Terminal Position: DUAL

Dual terminal position enhances layout flexibility, allowing for efficient routing in circuit designs.

Case Connection: SOURCE

The source connection configuration optimizes performance, particularly in RF amplification applications, ensuring effective signal handling.

Reference Standard: IEC-60134

Compliance with IEC-60134 ensures that this product meets international standards for safety and performance, providing confidence in its reliability.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) CLF1G0060S-10U attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

150 V

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

C BAND

JESD-30 Code:

R-CDFP-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

DEPLETION MODE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Polarity or Channel Type:

Reference Standard:

IEC-60134

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

CLF1G0060S-10U Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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