Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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CLF1G0060S-10U by NXP Semiconductors is a high-performance N-channel FET designed for C-band amplification. It features a 150V breakdown voltage, operates in depletion mode, and utilizes gallium nitride technology for superior efficiency. Ideal for RF applications, it comes in a flatpack ceramic package.
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Vyrian
Digiode
Anansix
Native Components
$15.812
Northwest PG Solutions
$17.394
$15.654
One Stop Electronics
$64.050
Component Stockers USA
$99.990
QUARKTWIN TECHNOLOGY LTD
Microchip USA
UNI Independent Distributors
Corphita
The ceramic, metal-sealed co-fired package ensures excellent thermal stability and durability, making it suitable for high-performance applications.
N-channel configuration allows for efficient conduction and better performance in switching applications, which is beneficial for RF amplification.
Having a single configuration simplifies integration into circuits, making it ideal for various applications without unnecessary complexity.
Designed specifically for amplification, this FET can deliver high gain, which is essential for RF communication systems.
Surface mount capability allows for compact design and easy integration into modern electronic assemblies, enhancing space efficiency.
A high breakdown voltage indicates robustness and the ability to withstand high-voltage applications, increasing reliability in demanding environments.
The rectangular package shape can facilitate efficient layout and optimize board space usage in circuit designs.
Flat terminals provide secure mounting and excellent electrical contact, optimizing performance and reducing parasitic effects.
Depletion mode operation allows for versatile control over the device, which is useful in certain applications requiring low power consumption.
Support for the C band enables this FET to operate effectively in a range of communication applications, including satellite and microwave systems.
The two-terminal design simplifies integration into circuits, making it efficient for various applications, particularly in compact electronics.
Flatpack style contributes to low-profile designs, making it ideal for space-constrained applications without compromising performance.
High electron mobility technology allows for faster switching speed and higher efficiency, contributing to superior performance in RF applications.
Gallium nitride offers high efficiency and thermal conductivity, making it suitable for high-power and high-frequency applications.
Dual terminal position enhances layout flexibility, allowing for efficient routing in circuit designs.
The source connection configuration optimizes performance, particularly in RF amplification applications, ensuring effective signal handling.
Compliance with IEC-60134 ensures that this product meets international standards for safety and performance, providing confidence in its reliability.
RF Small Signal Field Effect Transistors (FET) CLF1G0060S-10U attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors
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CLF1G0060S-10U Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
SMBJ18CA
Jiangsu Jiejie Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358N
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
FDC5614P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;
2N2222A
Texas Instruments
2N2222A by Texas Instruments is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz).
SS14
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WT
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58-360
Glenair
CONNECTOR ACCESSORY; Contact Gender: MALE; Material: COPPER ALLOY; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT; MIL Conformity: YES;
BSS138
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Maximum Drain Current (ID): .2 A; Operating Mode: ENHANCEMENT MODE;
Sangdest Microelectronics (Nanjing)
1N4148WS
First Components International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138BKW,115
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; No. of Terminals: 3; Additional Features: LOGIC LEVEL COMPATIBLE;
E8WSDC12-32.768KTR
Ecliptek
PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;
LL4148
Promax-johnton
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Taitron Components
MBRA160T3G
Onsemi
MBRA160T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.51V. It operates b/w -55 to 150°C, has a reverse test voltage of 60V, and is ideal for power applications due to its high efficiency and small outline package style.
FSMLF327
Fox Electronics
FSMLF327 by Fox Electronics is a crystal oscillator with 20 ppm frequency tolerance, 144% stability, and 50000 ohm series resistance. Ideal for applications requiring precise timing such as communication systems, industrial automation, and consumer electronics. Operating temperature range from -40 to 85 °C.
OHN3020U
Optek Technology
MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;
Leshan Radio
RECTIFIER DIODE; Surface Mount: YES; Maximum Non Repetitive Peak Forward Current: 2 A; Maximum Reverse Recovery Time: .004 us; No. of Phases: 1; Maximum Operating Temperature: 175 Cel;
BSS138-7-F
SPC TECHNOLOGY/ MULTICOMP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .2 A; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
LM555CN
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
VMMK-1218-TR1G
Broadcom
Broadcom's VMMK-1218-TR1G is an N-channel RF FET with a min DS breakdown voltage of 5V and power gain of 6.7dB, ideal for amplifier applications in the Ku band. This single configuration transistor operates in enhancement mode, with a max drain current of 0.1A and high electron mobility technology for efficient performance.
BF904WR-TAPE-7
BF904WR-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 7V, operates in the ultra-high frequency band, and supports dual gate enhancement mode. This compact surface mount device ensures efficient performance with a max temp of 150 °C.
BF997-T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 4; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
934028870115
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Elements: 2; Minimum DS Breakdown Voltage: 7 V;
BF909WR-T
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Position: DUAL; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
BF998B-GS08
Temic Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Position: DUAL; Terminal Form: GULL WING;
TGF1350SPCX
TGF1350SPCX by Texas Instruments is an N-CHANNEL RF FET with 8V DS Breakdown Voltage and 8dB Power Gain. Ideal for KU BAND applications, it operates in DEPLETION MODE with 0.1A Drain Current, 0.7W Power Dissipation, and up to 150°C Operating Temperature.
934055959215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: TIN;
BF556B-TAPE-7
BF556B-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
ATF-58143-BLKG
Agilent Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Maximum Power Dissipation Ambient: .5 W; Minimum DS Breakdown Voltage: 5 V;
BLC8G27LS-100AV
RF Small Signal Field-Effect Transistors;
MMBFJ305
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): 260;
934050280115
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): .03 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
934028870135
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
J310RLRE
J310RLRE by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance with a Max Operating Temperature of 125 °C. This THROUGH-HOLE transistor features a PLASTIC/EPOXY body and has 3 terminals in a CYLINDRICAL package style.
2N5486RLRP
Onsemi 2N5486RLRP is an N-CHANNEL RF FET with 10 dB Gp, ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND. It has a max power dissipation of 0.31 W, operates in DEPLETION MODE at up to 150 °C, and features a JUNCTION technology with SILICON material.
BF998A-GS08
Vishay Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
BF909WR-TAPE-7
BF909WR-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 7V min DS breakdown voltage, operates in the ultra-high frequency band, and supports dual gate enhancement mode. This compact surface mount device ensures efficient performance with a max temp of 150 °C.
933505270215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Field Effect Transistor Technology: JUNCTION; Moisture Sensitivity Level (MSL): 1;
BF904R,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING; Maximum Operating Temperature: 150 Cel;
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CLF1G0035-100P
Ampleon Netherlands B V
CLF1G0035-100PU
NXP Semiconductors' CLF1G0035-100PU is an N-CHANNEL RF FET with 150V DS breakdown voltage. It features a common source configuration, suitable for S BAND applications like amplifiers. The transistor utilizes high electron mobility GaN technology in a ceramic-metal package with flange mount style.
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Minimum DS Breakdown Voltage: 150 V; JESD-30 Code: R-CDFM-F4;
CLF1G0035S-100P
CLF1G0035S-100,112
N-CHANNEL; Maximum Operating Temperature: 250 Cel;
CLF1G0035-50,112
CLF1G0035S-100PU
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Style (Meter): FLATPACK;
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; No. of Terminals: 4; Minimum DS Breakdown Voltage: 150 V;
CLF1G0035-100,112
CLF1G0035S-50,112
CLF1G0060-10U
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; Reference Standard: IEC-60134; Terminal Position: DUAL;
CLF1G0060-30U
CLF1G0060S-30U
CLF1G0060S-10U
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFP-F2; Package Style (Meter): FLATPACK;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: GALLIUM NITRIDE; Minimum DS Breakdown Voltage: 150 V; Case Connection: SOURCE;
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