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J310RL

Onsemi

J310RL by Onsemi

J310RL by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring DEPLETION MODE operation, it has a Max Operating Temperature of 125 °C and a Crss of 2.5 pF, housed in a CYLINDRICAL package with TIN LEAD finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,416 parts In-Stock

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Digiode

USA . 287 parts In-Stock

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287

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ComSIT Distribution GmbH

Germany . 100 parts In-Stock

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100

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Kulean Microsystems

USA . 5,376 parts In-Stock

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5,376

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SupplyDigital Components

Austria . 3,955 parts In-Stock

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TANS Electronics

Latvia . 2,631 parts In-Stock

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UHIMA Technologies

Türkiye . 942 parts In-Stock

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942

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Problanco Electronics

Mexico . 869 parts In-Stock

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869

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Corphita

USA . 306 parts In-Stock

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Corohmni

South Africa . 203 parts In-Stock

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Overview

Discover the power of the J310RL by Onsemi, a top-quality RF Small Signal Field Effect Transistor (FET) that delivers unparalleled performance in amplifier applications. With its N-CHANNEL configuration and DEPLETION MODE operating mode, this transistor is designed for the ULTRA HIGH FREQUENCY BAND, ensuring superior signal amplification. Manufactured by Onsemi, a trusted name in semiconductor technology, the J310RL offers customers unmatched value, reliability, and efficiency. Upgrade your electronic projects with the J310RL and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically offer superior performance and efficiency in amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various amplifier setups.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Minimum DS Breakdown Voltage: 25 V

With a minimum breakdown voltage of 25V, this transistor can handle higher voltages without damage, making it reliable for various applications.

Package Shape: ROUND

Round package shape allows for easier mounting and placement in circuits, optimizing space and layout efficiency.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easier soldering, ensuring stable electrical connections.

Operating Mode: DEPLETION MODE

Depletion mode operation offers flexibility in control and modulation of signal amplification, allowing for customized performance.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra-high frequency applications, providing exceptional performance in high-frequency signal amplification.

No. of Terminals: 3

Three terminals offer versatility in circuit connection and usage, accommodating various amplifier configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical package style ensures easy handling and installation, making it convenient for circuit assembly.

Field Effect Transistor Technology: JUNCTION

Junction technology offers efficient and reliable operation, ensuring consistent performance in amplifier applications.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this transistor can withstand high temperatures, ideal for demanding applications.

Transistor Element Material: SILICON

Silicon material provides high conductivity and performance stability, ensuring reliable signal amplification.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers corrosion resistance and secure connections, enhancing the durability of the transistor.

Terminal Position: BOTTOM

Bottom terminal position ensures easy mounting and secure soldering, facilitating seamless integration into circuits.

Maximum Feedback Capacitance (Crss): 2.5 pF

Low feedback capacitance minimizes signal distortion and interference, enhancing the signal amplification performance of the transistor.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) J310RL attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2.5 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

J310RL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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